公开(公告)号：EP2158543B1

公开(公告)日：2013-05-15

申请号：EP08770624.8

申请日：2008-06-11

申请人： Micron Technology, Inc.

发明人： ROOHPARVAR, Frankie ,  SARIN, Vishal ,  HOEI, Jung, S.

IPC分类号： G11C11/56

CPC分类号： G11C16/12 ,  G11C7/16 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/04 ,  G11C16/0483 ,  G11C29/021 ,  G11C29/028 ,  G11C2211/5641

公开(公告)号：EP2158543A1

公开(公告)日：2010-03-03

申请号：EP08770624.8

申请日：2008-06-11

申请人： Micron Technology, Inc.

发明人： ROOHPARVAR, Frankie ,  SARIN, Vishal ,  HOEI, Jung, S.

IPC分类号： G06F12/00

CPC分类号： G11C16/12 ,  G11C7/16 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/04 ,  G11C16/0483 ,  G11C29/021 ,  G11C29/028 ,  G11C2211/5641

摘要： Memory devices adapted to receive and transmit analog data signals representative of two or more bits, such as to facilitate increases in data transfer rates relative to devices communicating data signals indicative of individual bits. A controller and a read/write channel convert the digital bit patterns to analog data signals to be stored in a memory array at a particular bit capacity level in order to achieve a desired level of reliability.