公开(公告)号：EP2948983A1

公开(公告)日：2015-12-02

申请号：EP14743125.8

申请日：2014-01-23

Applicant: Micron Technology, Inc.

Inventor： HOPKINS, John ,  FAN, Darwin Franseda ,  SIMSEK-EGE, Fatma Arzum ,  BRIGHTEN, James ,  MAURI, Aurelio Giancarlo ,  JAYANTI, Srikant

IPC: H01L27/115

CPC classification number: H01L29/7887 ,  H01L21/28035 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/401 ,  H01L29/42324 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7827 ,  H01L29/7881 ,  H01L29/7889

Abstract: Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory stack. Such a memory stack can include memory cells and a dielectric between adjacent memory cells, each memory cell including a control gate and a charge storage structure. The memory cell can further include a barrier material between the charge storage structure and the control gate, the charge storage structure and the barrier material having a substantially equal dimension.