公开(公告)号：EP1624484A1

公开(公告)日：2006-02-08

申请号：EP03723344.2

申请日：2003-05-13

申请人： Mimasu Semiconductor Industry Company Limited

发明人： TSUCHIYA, Masato Mimasu Semiconductor Ind. Co.,Ltd ,  MASHIMO, Ikuo Mimasu Semiconductor Ind. Co., Ltd. ,  SAITO, Koichi Mimasu Semiconductor In. Co., Ltd.

IPC分类号： H01L21/68 ,  B65G49/06 ,  B65G49/07 ,  B65H3/08 ,  B65H3/48 ,  B65G59/04

CPC分类号： B65H3/0816 ,  B65H3/48 ,  H01L21/67092 ,  H01L21/6838

摘要： It is an object of the present invention to provide a wafer release method capable of releasing a wafer safely, simply and certainly and improving a wafer releasing rate, a wafer release apparatus and a wafer release transfer machine using the wafer release apparatus. A wafer release method of the present invention comprises the steps of: pressing the uppermost wafer along an axis direction (L-L') shifted by an angle in the range of from 15 to 75 degrees from a crystal habit line axis (A-A') or (B-B') of the uppermost wafer clockwise or counterclockwise; bending upwardly the peripheral portion of the uppermost wafer so as to cause a bending stress in the uppermost wafer in the axis direction (L-L') shifted by the angle; blowing a fluid into a clearance between the lower surface of the uppermost wafer and the upper surface of the lower wafer adjacent thereto; and raising the uppermost wafer for releasing.

摘要翻译： 本发明的一个目的是提供一种晶片释放方法，其能够简单且可靠地安全，简单且可靠地释放晶片并提高晶片释放速率，晶片释放装置和使用晶片释放装置的晶片释放传送机器。 本发明的晶片释放方法包括以下步骤：沿着从晶体习性线轴（A-A）偏移15度至75度范围内的角度的轴线方向（L-L'）按压最上面的晶片 '）或（B-B'）顺时针或逆时针旋转; 向上弯曲最上面的晶片的周边部分，以便使轴向上的最上面的晶片中的弯曲应力（L-L'）偏移该角度; 将流体吹入最上晶片的下表面和与其相邻的下晶片的上表面之间的间隙中; 并提升最上面的晶片以释放。