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    WAFER DEMOUNTING METHOD, WAFER DEMOUNTING DEVICE, AND WAFER DEMOUNTING AND TRANSFERRING MACHINE
    1.
    发明公开
    WAFER DEMOUNTING METHOD, WAFER DEMOUNTING DEVICE, AND WAFER DEMOUNTING AND TRANSFERRING MACHINE 有权
    WAFER DEMOUNTING METHOD，WAFER DEMOUNTING DEVICE，AND WAFER DEMOUNTING AND TRANSFERRING MACHINE

    公开(公告)号：EP1624484A1

    公开(公告)日：2006-02-08

    申请号：EP03723344.2

    申请日：2003-05-13

    申请人： Mimasu Semiconductor Industry Company Limited

    发明人： TSUCHIYA, Masato Mimasu Semiconductor Ind. Co.,Ltd ,  MASHIMO, Ikuo Mimasu Semiconductor Ind. Co., Ltd. ,  SAITO, Koichi Mimasu Semiconductor In. Co., Ltd.

    IPC分类号： H01L21/68 ,  B65G49/06 ,  B65G49/07 ,  B65H3/08 ,  B65H3/48 ,  B65G59/04

    CPC分类号： B65H3/0816 ,  B65H3/48 ,  H01L21/67092 ,  H01L21/6838

    摘要： It is an object of the present invention to provide a wafer release method capable of releasing a wafer safely, simply and certainly and improving a wafer releasing rate, a wafer release apparatus and a wafer release transfer machine using the wafer release apparatus. A wafer release method of the present invention comprises the steps of: pressing the uppermost wafer along an axis direction (L-L') shifted by an angle in the range of from 15 to 75 degrees from a crystal habit line axis (A-A') or (B-B') of the uppermost wafer clockwise or counterclockwise; bending upwardly the peripheral portion of the uppermost wafer so as to cause a bending stress in the uppermost wafer in the axis direction (L-L') shifted by the angle; blowing a fluid into a clearance between the lower surface of the uppermost wafer and the upper surface of the lower wafer adjacent thereto; and raising the uppermost wafer for releasing.

    摘要翻译： 本发明的一个目的是提供一种晶片释放方法，其能够简单且可靠地安全，简单且可靠地释放晶片并提高晶片释放速率，晶片释放装置和使用晶片释放装置的晶片释放传送机器。 本发明的晶片释放方法包括以下步骤：沿着从晶体习性线轴（A-A）偏移15度至75度范围内的角度的轴线方向（L-L'）按压最上面的晶片 '）或（B-B'）顺时针或逆时针旋转; 向上弯曲最上面的晶片的周边部分，以便使轴向上的最上面的晶片中的弯曲应力（L-L'）偏移该角度; 将流体吹入最上晶片的下表面和与其相邻的下晶片的上表面之间的间隙中; 并提升最上面的晶片以释放。

    SILICON WAFER RECLAMATION METHOD AND RECLAIMED WAFER
    3.
    发明公开
    SILICON WAFER RECLAMATION METHOD AND RECLAIMED WAFER 审中-公开
    紫外线灭菌器

    公开(公告)号：EP1667219A1

    公开(公告)日：2006-06-07

    申请号：EP04772042.0

    申请日：2004-08-24

    申请人： Mimasu Semiconductor Industry Company Limited

    发明人： UCHIDA, T., c/o Mimasu Semiconductor Ind. Co., Ltd ,  IIJIMA, K., c/o Mimasu Semiconductor Ind. Co., Ltd ,  YAMAZAKI, T., c/o Mimasu Semiconductor Ind. Co Ltd ,  TOMARU, S., c/o Mimasu Semiconductor Ind. Co., Ltd ,  MARUYAMA, F., c/o Mimasu Semiconductor Ind. Co Ltd

    IPC分类号： H01L21/322

    CPC分类号： H01L21/02079 ,  H01L21/02032 ,  H01L21/3221

    摘要： The present invention is a method for reclaiming a silicon wafer in which a thin film has been formed on its surface, at least, comprising a thin-film removing step for removing the thin film having been formed on the silicon wafer and a mirror-polishing step for mirror-polishing at least one side of the thin-film-removed silicon wafer, wherein, before performing the mirror-polishing step, gettering-site forming treatment for applying damage load to at least one side of the silicon wafer is performed and then the silicon wafer is subjected to heat treatment, thereby impurities inside the silicon wafer are reduced. Thereby, there is provided a method for reclaiming a silicon wafer, in which a thin film such as a metal thin film having been formed on a silicon wafer can be removed, and impurities having diffused inside the wafer can be also reduced, thereby silicon wafers having very little metal contamination can be stably obtained.

    摘要翻译： 本发明是一种用于回收在其表面上形成薄膜的硅晶片的方法，至少包括用于去除在硅晶片上形成的薄膜的薄膜去除步骤和镜面抛光 在进行镜面抛光步骤之前，进行用于对硅晶片的至少一面施加损伤载荷的吸杂位置形成处理，进行用于对去除薄膜的硅晶片的至少一侧进行镜面抛光的步骤， 然后对硅晶片进行热处理，从而减小硅晶片内的杂质。 因此，提供了一种用于回收硅晶片的方法，其中可以除去已经形成在硅晶片上的诸如金属薄膜的薄膜，并且还可以减少在晶片内扩散的杂质，从而硅晶片 可以稳定地获得金属污染很少。

    Wafer rotary holding apparatus and wafer surface treatment apparatus with waste liquid recovery mechanism
    4.
    发明公开
    Wafer rotary holding apparatus and wafer surface treatment apparatus with waste liquid recovery mechanism 有权
    Waferdrehhaltevorrichtung

    公开(公告)号：EP1083589A2

    公开(公告)日：2001-03-14

    申请号：EP00119294.7

    申请日：2000-09-06

    申请人： Mimasu Semiconductor Industry Company Limited

    发明人： Tsuchiya, Masato, c/o Mimasu Semiconductor Indust. ,  Ogasawara, Shunichi, c/o Mimasu Semiconductor ,  Murooka, Hideyuki, c/o Mimasu Semiconductor

    IPC分类号： H01L21/00

    CPC分类号： H01L21/6715 ,  H01L21/6838 ,  Y10S134/902

    摘要： Provided is a wafer rotary holding apparatus by which a reduced pressure is created on an upper surface of a rotary disk by a simple and easy-to-make mechanism with no need of any of a vacuum source apparatus, a compressed air supply apparatus, a compressed gas supply apparatus and other apparatuses in use; a wafer can be held while rotating with no contact to a rear surface thereof; a degree of pressure reduction can be adjusted with ease and even a thin wafer (of 0.1 mm or less in thickness) can be held while rotating with no deformation; and the wafer with a bowing can be held while rotating with no correction of the bowing. A wafer rotary holding apparatus includes: a rotary disk on which a fluid flow path is formed; a through hole formed in a central section of the rotary disk; and a plurality of wafer rests provided on an upper surface of the rotary disk.

    摘要翻译： 提供一种晶片旋转保持装置，其通过简单且易于制造的机构在旋转盘的上表面上产生减压，而不需要任何真空源装置，压缩空气供应装置， 压缩气体供给装置等使用中的装置; 可以在不与其后表面接触的同时旋转晶片; 可以容易地调节减压度，并且即使在没有变形的同时旋转的同时也能够保持薄的晶片（厚度为0.1mm以下） 并且具有弯曲的晶片可以在没有弯曲的校正的同时旋转的同时保持。 晶片旋转保持装置包括：旋转盘，其上形成有流体流路; 形成在旋转盘的中心部的通孔; 以及设置在旋转盘的上表面上的多个晶片托架。

    Wire saw
    5.
    发明公开
    Wire saw 失效
    Drahtsägevorrichtung

    公开(公告)号：EP0743140A2

    公开(公告)日：1996-11-20

    申请号：EP96302607.5

    申请日：1996-04-10

    申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED ,  Mimasu Semiconductor Industry Company Limited

    发明人： Toyama, Kouhei ,  Kiuchi, Etsuo ,  Hayakawa, Kazuo

    IPC分类号： B24B27/06

    CPC分类号： B28D5/045 ,  B28D5/0058

    摘要： A wire saw 22 for slicing a semiconductor single crystal ingot G with which alignment of the crystallographic orientation of the ingot G is simple and easy in a slicing process and a method for slicing the ingot G by means of the wire saw 22. Main rollers 24a, 24b, 24c are three-dimensionally arranged with a predetermined distance between each other, and a wire 28 runs over the main rollers 24a, 24b, 24c to form arrays of wire portions parallel to each other, with said wire saw 22 an ingot G being sliced into rods R by pressing it to an array of wire portions between a pair of main rollers 24b, 24c that are used to slice the ingot G, while the wire 28 is being driven and slurry is fed to the array of wire portions between the pair of main rollers 24b, 24c, wherein the wire 28 runs over the pair of main rollers 24b, 24c used for slicing in a ratio of one turn over the pair of main rollers 24b, 24c to more than one turn over the other main roller 24a or rollers 24a 24d so that the array of wire portions running over the pair of main rollers 24b, 24c used for slicing can be arranged at a desired pitch.

    摘要翻译： 用于切割半导体单晶锭G的线锯22，其中在切割过程中晶锭G的晶体取向的取向是简单和容易的，以及通过线锯22切割锭G的方法。主辊24a ，24b，24c以相互间的预定距离三维地排列，并且线28在主辊24a，24b，24c上方延伸，以形成彼此平行的线部阵列，所述线锯22为锭G 通过将其压入到用于切割锭G的一对主辊24b，24c之间的线阵列阵列中，同时将线28驱动并且浆料被馈送到线阵列之间 一对主辊24b，24c，其中线28在用于在一对主辊24b，24c上的一圈的比例切割的一对主辊24b，24c上延伸超过另一个主辊 辊24a或辊24a 24d使得阵列 在用于切片的一对主辊24b，24c上运行的丝线部分可以以期望的间距布置。

    Wafer rotary holding apparatus and wafer surface treatment apparatus with waste liquid recovery mechanism
    7.
    发明公开
    Wafer rotary holding apparatus and wafer surface treatment apparatus with waste liquid recovery mechanism 有权
    us us us us us us us us us us us us us us us us us us us us us us us us us us

    公开(公告)号：EP1083589A3

    公开(公告)日：2006-03-01

    申请号：EP00119294.7

    申请日：2000-09-06

    申请人： Mimasu Semiconductor Industry Company Limited

    发明人： Tsuchiya, Masato, c/o Mimasu Semiconductor Indust. ,  Ogasawara, Shunichi, c/o Mimasu Semiconductor ,  Murooka, Hideyuki, c/o Mimasu Semiconductor

    IPC分类号： H01L21/00

    CPC分类号： H01L21/6715 ,  H01L21/6838 ,  Y10S134/902

    摘要： Provided is a wafer rotary holding apparatus by which a reduced pressure is created on an upper surface of a rotary disk by a simple and easy-to-make mechanism with no need of any of a vacuum source apparatus, a compressed air supply apparatus, a compressed gas supply apparatus and other apparatuses in use; a wafer can be held while rotating with no contact to a rear surface thereof; a degree of pressure reduction can be adjusted with ease and even a thin wafer (of 0.1 mm or less in thickness) can be held while rotating with no deformation; and the wafer with a bowing can be held while rotating with no correction of the bowing. A wafer rotary holding apparatus includes: a rotary disk on which a fluid flow path is formed; a through hole formed in a central section of the rotary disk; and a plurality of wafer rests provided on an upper surface of the rotary disk.

    摘要翻译： 提供一种晶片旋转保持装置，其通过简单且易于制造的机构在旋转盘的上表面上产生减压，而不需要任何真空源装置，压缩空气供应装置， 压缩气体供给装置等使用中的装置; 可以在不与其后表面接触的同时旋转晶片; 可以容易地调节减压度，并且即使在没有变形的同时旋转的同时也能够保持薄的晶片（厚度为0.1mm以下） 并且具有弯曲的晶片可以在没有弯曲的校正的同时旋转的同时保持。 晶片旋转保持装置包括：旋转盘，其上形成有流体流路; 形成在旋转盘的中心部的通孔; 以及设置在旋转盘的上表面上的多个晶片托架。

    Wire saw
    10.
    发明公开
    Wire saw 失效
    线锯

    公开(公告)号：EP0743140A3

    公开(公告)日：1997-04-23

    申请号：EP96302607.5

    申请日：1996-04-10

    申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED ,  Mimasu Semiconductor Industry Company Limited

    发明人： Toyama, Kouhei ,  Kiuchi, Etsuo ,  Hayakawa, Kazuo

    IPC分类号： B24B27/06

    CPC分类号： B28D5/045 ,  B28D5/0058

    摘要： A wire saw 22 for slicing a semiconductor single crystal ingot G with which alignment of the crystallographic orientation of the ingot G is simple and easy in a slicing process and a method for slicing the ingot G by means of the wire saw 22. Main rollers 24a, 24b, 24c are three-dimensionally arranged with a predetermined distance between each other, and a wire 28 runs over the main rollers 24a, 24b, 24c to form arrays of wire portions parallel to each other, with said wire saw 22 an ingot G being sliced into rods R by pressing it to an array of wire portions between a pair of main rollers 24b, 24c that are used to slice the ingot G, while the wire 28 is being driven and slurry is fed to the array of wire portions between the pair of main rollers 24b, 24c, wherein the wire 28 runs over the pair of main rollers 24b, 24c used for slicing in a ratio of one turn over the pair of main rollers 24b, 24c to more than one turn over the other main roller 24a or rollers 24a 24d so that the array of wire portions running over the pair of main rollers 24b, 24c used for slicing can be arranged at a desired pitch.

    摘要翻译： 用于切割半导体单晶锭G的线锯22，在切割过程中，晶锭G的晶体取向的对准简单且容易，并且用线锯22切割锭G.主辊24a ，24b，24c以预定距离彼此三维布置，并且线28在主辊24a，24b，24c上方延伸以形成彼此平行的线部分阵列，所述线锯22为锭G 通过将其压到用于切割锭G的一对主辊24b，24c之间的一系列线部分而被切成棒R，同时线28被驱动并且浆料被供给到线材部分阵列之间 一对主滚筒24b，24c，其中，导线28在一对主滚筒24b，24c上以一圈的比率在用于切片的一对主滚筒24b，24c上滑动超过一圈 滚子24a或滚子24a，24d使得该阵列 在用于切片的一对主辊24b，24c上延伸的线部分可以以期望的间距布置。