公开(公告)号：EP0647730A3

公开(公告)日：1998-01-28

申请号：EP94115739.8

申请日：1994-10-06

申请人： Mitsubishi Cable Industries, Ltd.

发明人： Tadatomo, Kazuyuki, c/o Itami Works of ,  Watabe, Shinichi, c/o Itami Works of ,  Okagawa, Hiroaki, c/o Itami Works of ,  Hiramatsu, Kazumasa

IPC分类号： C30B29/38

CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/406 ,  H01L33/0075 ,  H01L33/0079

摘要： A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 µm, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.

公开(公告)号：EP0647730B1

公开(公告)日：2002-09-11

申请号：EP94115739.8

申请日：1994-10-06

申请人： Mitsubishi Cable Industries, Ltd.

发明人： Tadatomo, Kazuyuki, c/o Itami Works of ,  Watabe, Shinichi, c/o Itami Works of ,  Okagawa, Hiroaki, c/o Itami Works of ,  Hiramatsu, Kazumasa

IPC分类号： C30B29/38 ,  H01L21/00

CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/406 ,  H01L33/0075 ,  H01L33/0079

公开(公告)号：EP0647730A2

公开(公告)日：1995-04-12

申请号：EP94115739.8

申请日：1994-10-06

申请人： Mitsubishi Cable Industries, Ltd.

发明人： Tadatomo, Kazuyuki, c/o Itami Works of ,  Watabe, Shinichi, c/o Itami Works of ,  Okagawa, Hiroaki, c/o Itami Works of ,  Hiramatsu, Kazumasa

IPC分类号： C30B29/38

CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/406 ,  H01L33/0075 ,  H01L33/0079

摘要： A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 µm, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.

摘要翻译： 具有5-250秒的双晶X射线摇摆曲线半高的全宽和不小于80μm的GaN单晶，具有优良品质的GaN单晶的制造方法和 足够的厚度允许其用作基板和具有高亮度和高可靠性的半导体发光元件，其包括作为基板的具有优异质量和/或足够厚度的GaN单晶，其允许其用作基板。