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1.发明公开GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof 失效基于氮化镓具有低的位错密度，其用途和制造方法元件
公开(公告)号：EP0874405A3
公开(公告)日：2004-09-15
申请号：EP98105090.9
申请日：1998-03-20
发明人： Kazuyuki, Tadatomo, c/o Itami Factory , Okagawa, Hiroaki, c/o Itami Factory , Ohuchi, Youichiro, c/o Itami Factory , Miyashita, Keiji, c/o Itami Factory , Hiramatsu, Kazumasa , Sawaki, Nobuhiko , Yahashi, Katsunori , Shibata, Takumi
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02483 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L33/007 , H01L33/025 , H01S5/0213 , H01S5/22 , H01S5/32341 , H01S2301/173 , H01S2304/12
摘要： A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.
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公开(公告)号：EP0647730A3
公开(公告)日：1998-01-28
申请号：EP94115739.8
申请日：1994-10-06
发明人： Tadatomo, Kazuyuki, c/o Itami Works of , Watabe, Shinichi, c/o Itami Works of , Okagawa, Hiroaki, c/o Itami Works of , Hiramatsu, Kazumasa
IPC分类号： C30B29/38
CPC分类号： H01L33/32 , C30B25/02 , C30B29/406 , H01L33/0075 , H01L33/0079
摘要： A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 µm, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.
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公开(公告)号：EP0647730B1
公开(公告)日：2002-09-11
申请号：EP94115739.8
申请日：1994-10-06
发明人： Tadatomo, Kazuyuki, c/o Itami Works of , Watabe, Shinichi, c/o Itami Works of , Okagawa, Hiroaki, c/o Itami Works of , Hiramatsu, Kazumasa
CPC分类号： H01L33/32 , C30B25/02 , C30B29/406 , H01L33/0075 , H01L33/0079
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4.发明公开GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof 失效Element auf Basis von GaN mit niedriger Versetzungsdichte，seine Verwendung und Herstellungsverfahren
公开(公告)号：EP0874405A2
公开(公告)日：1998-10-28
申请号：EP98105090.9
申请日：1998-03-20
发明人： Kazuyuki, Tadatomo, c/o Itami Factory , Okagawa, Hiroaki, c/o Itami Factory , Ohuchi, Youichiro, c/o Itami Factory , Miyashita, Keiji, c/o Itami Factory , Hiramatsu, Kazumasa , Sawaki, Nobuhiko , Yahashi, Katsunori , Shibata, Takumi
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02483 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L33/007 , H01L33/025 , H01S5/0213 , H01S5/22 , H01S5/32341 , H01S2301/173 , H01S2304/12
摘要： A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.
摘要翻译： 一种GaN基晶体基底构件，包括基底衬底，掩模层，部分地覆盖所述基底衬底的表面以产生掩模区域，以及生长在其上以覆盖掩模层的GaN组晶体层，所述掩模层部分地与所述掩模层直接接触 基底的非掩蔽区域，半导体元件的用途，其制造方法以及位错线的控制方法。 本发明的制造方法能够使位于掩模区域或非掩蔽区域以上的GaN族结晶层的一部分具有低位错密度。
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公开(公告)号：EP0647730A2
公开(公告)日：1995-04-12
申请号：EP94115739.8
申请日：1994-10-06
发明人： Tadatomo, Kazuyuki, c/o Itami Works of , Watabe, Shinichi, c/o Itami Works of , Okagawa, Hiroaki, c/o Itami Works of , Hiramatsu, Kazumasa
IPC分类号： C30B29/38
CPC分类号： H01L33/32 , C30B25/02 , C30B29/406 , H01L33/0075 , H01L33/0079
摘要： A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 µm, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.
摘要翻译： 具有5-250秒的双晶X射线摇摆曲线半高的全宽和不小于80μm的GaN单晶，具有优良品质的GaN单晶的制造方法和 足够的厚度允许其用作基板和具有高亮度和高可靠性的半导体发光元件，其包括作为基板的具有优异质量和/或足够厚度的GaN单晶，其允许其用作基板。
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