摘要:
A rotary cutting tool including a polycrystalline diamond material of the invention includes: a tool body rotated about an axis with a carbide substrate made of cemented carbide and a flute provided at a tip portion thereof; a PCD layer sintered integrally with the carbide substrate, provided on an inside face of the flute facing in a rotation direction; and a cutting edge provided on the PCD layer to have the inside face as a rake face, in which a margin portion continuous with a rear side of the flute in the rotation direction is formed on an outer periphery of the tip portion, the cutting edge is formed at a ridge portion of the rake face, and a thickness of the PCD layer is 1/3 to 1 times a width of the margin portion.
摘要:
A drilling tip includes a tip main body 2 that has a posterior end portion 2A having a columnar or disk shape centered on a tip center line C and a distal end portion 2B and is made of a cemented carbide and a hard layer 3 that coats the distal end portion 2B and is made of a polycrystalline diamond sintered body. The distal end portion 2B of the tip main body 2 has a convex portion 2a, of which a surface in a cross section taken along the tip center line C has a convex arc shape, and a concave portion 2b, which has a concave arc shape tangents to the convex portion 2a. A diameter D (mm) of the posterior end portion 2A is within a range of 8 mm to 20 mm. With respect to the diameter D (mm), a ratio r1/D of a radius r1 (mm) of the convex portion 2a is within a range of 0.1 to 0.65, and a ratio r2/D of a radius r2 (mm) of the concave portion 2b is within a range of 0.05 to 3.0. An angle θ (°) formed by a straight line L that connects a tangent point P which the convex portion 2a tangents to the concave portion 2b and a center Q of the convex portion 2a to each other with respect to the tip center line C is within a range of 20° to 90°.
摘要:
A polycrystalline diamond sintered material tool includes: a cemented carbide substrate (17), which is mainly composed of WC and includes Co; and a diamond layer (18) containing a metal catalyst made of Co provided on the cemented carbide substrate (17). The average layer thickness of a Co rich layer (19) formed in an interface between the cemented carbide substrate (17) and the diamond layer (18) is 30 µm or less. Preferably, a value of C MAX /C DIA is 2 or less when C DIA is defined as an average content of Co included in the diamond layer (18) and C MAX is defined as a peak value of a Co content in the Co rich layer (19). More preferably, a value of D/Do is less than 2 when D is defined as average grain size of WC particles in a region from the interface between the cemented carbide substrate (17) and the diamond layer (18) to 50 µm toward an inside of the cemented carbide substrate (17); and Do is defined as an average grain size of WC particles in the inside of the cemented carbide substrate (17).