公开(公告)号：EP3026718A4

公开(公告)日：2017-04-12

申请号：EP14830133

申请日：2014-07-10

申请人： NAT INST FOR MATERIALS SCIENCE ,  MITSUBA CORP

发明人： ISODA YUKIHIRO ,  TADA SATOKI ,  FUJIU HIROFUMI

IPC分类号： H01L35/14 ,  B22F3/14 ,  C01B33/06 ,  C22C1/04 ,  C22C13/00 ,  C22C23/00 ,  H01L35/34

CPC分类号： H01L35/34 ,  B22F3/14 ,  B22F2301/40 ,  C01B33/06 ,  C22C1/04 ,  C22C1/0408 ,  C22C13/00 ,  C22C23/00 ,  H01L35/14

摘要： An object is: to manufacture a p-type semiconductor by sintering which is represented by the general chemical formula: €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒMg 2 Si X Sn Y Ge Z (where "X + Y + Z = 1," "X ‰¥ 0, Y ‰¥ 0, and Z ‰¥ 0"). A solution is: X is in the range of 0.00 ‰¤ X ‰¤ 0.25, and in this case, Z satisfies the relationship: -1.00X + 0.40 ‰¥ Z ‰¥ -2.00X + 0.10, provided that Z > 0.00, and Y is in the range of 0.60 ‰¤ Y ‰¤ 0.95, and in this case, Z satisfies either of the relationships: -1.00Y + 1.00 ‰¥ Z ‰¥ -1.00Y + 0.75, provided that ‰¤ Y ‰¤ 0.90 and Z > 0.00, and -2.00Y + 1.90 ‰¥ Z ‰¥ -1.00Y + 0.75, provided that ‰¤ Y ‰¤ 0.95 and Z > 0.00.

公开(公告)号：EP3203536A4

公开(公告)日：2018-03-14

申请号：EP15847992

申请日：2015-09-18

申请人： MITSUBA CORP ,  NAT INSTITUTE FOR MATERIALS SCIENCE

发明人： TADA SATOKI ,  ISODA YUKIHIRO

IPC分类号： H01L35/14 ,  B22F3/14 ,  C01B33/06 ,  C01G19/00 ,  C22C1/04 ,  C22C13/00 ,  C22C23/00 ,  C30B1/02 ,  H01L35/22 ,  H01L35/34

CPC分类号： H01L35/22 ,  B22F3/14 ,  B22F2998/10 ,  C01B33/06 ,  C01G19/006 ,  C22C1/04 ,  C22C1/0408 ,  C22C1/0483 ,  C22C13/00 ,  C22C23/00 ,  C30B1/02 ,  H01L35/14 ,  H01L35/34 ,  B22F1/0003 ,  B22F9/04

摘要： A p-type thermoelectric material according to one aspect of the present invention is configured such that at least any one of a Mg site, a Si site, a Sn site and/or a Ge site in a compound composed of magnesium (Mg), silicon (Si), tin (Sn) and germanium (Ge) is substituted with any one or more elements selected from the group consisting of alkali metals of group 1A and gold (Au), silver (Ag), copper (Cu), zinc (Zn), calcium (Ca) and gallium (Ga) of group 1B.