公开(公告)号：EP4421221A1

公开(公告)日：2024-08-28

申请号：EP22883613.6

申请日：2022-10-19

申请人： NGK Insulators, Ltd.

发明人： URATA, Yuki ,  MATSUSHIMA, Kiyoshi ,  YOSHIKAWA, Jun

IPC分类号： C30B29/36 ,  H01L21/205

CPC分类号： C30B29/36 ,  H01L21/2015 ,  G01N21/6489 ,  H01L29/34 ,  H01L29/1608

摘要： There is provided a SiC substrate in which TSD density of the surface is very low. This substrate is a SiC substrate including a biaxially oriented SiC layer, wherein when a surface of the biaxially oriented SiC layer is analyzed by photoluminescence (PL) to obtain a graph by plotting PL intensity I as the vertical axis versus distance (µm) in the [11-20] direction as the horizontal axis, (i) the graph has a shape such that a maximum point and a minimum point are repeated, wherein the maximum point is defined as a point that gives PL intensity I higher than PL intensity I of any other point among six points in total consisting of points that are the first nearest, points that are the second nearest, and points that are the third nearest on the right and left of the maximum point, and the minimum point is defined as a point that gives PL intensity I lower than PL intensity I of any other point among six points in total consisting of points that are the first nearest, points that are the second nearest, and points that are the third nearest on the right and left of the minimum point, (ii) when a maximum value of PL intensity I at a given maximum point PM is assumed to be M, and a minimum value of PL intensity I at a minimum point Pm whose distance in the [11-20] direction is longer than that of the maximum point PM, and the minimum point Pm being present at a position nearest to the maximum point PM, is assumed to be m, a ratio of M/m is 1.05 or more, and (iii) distance L in the [11-20] direction between the maximum point PM and the minimum point Pm is 15 to 150 µm.