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公开(公告)号：EP4414483A1
公开(公告)日：2024-08-14
申请号：EP22878226.4
申请日：2022-08-25
发明人： OHTSUKI, Tsuyoshi , HAGIMOTO, Kazunori , ISHIZAKI, Junya , ABE, Tatsuo , SUZUKI, Atsushi , MATSUBARA, Toshiki
摘要： The present invention is a method for producing a heteroepitaxial film, including heteroepitaxial growing a 3C-SiC single crystal film on a single crystal Si substrate and then delaminating thereof, the method includes: with using a reduced-pressure CVD apparatus, a first step of removing a native oxide film on a surface of the single crystal Si substrate by hydrogen baking, a second step of performing nucleation of SiC at 1333 Pa or lower and 300°C or higher and 950°C or lower and a third step of forming the 3C-SiC single crystal film and forming a vacancy directly under the 3C-SiC single crystal film at 1333 Pa or lower and 800°C or higher and lower than 1200°C, while supplying a source gas containing carbon and silicon; and a fourth step of producing the heteroepitaxial film by delaminating the 3C-SiC single crystal film along the vacancy. This provides the method for efficiently obtaining the heteroepitaxial film in a thin film shape while minimizing damage to a device and material loss.
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公开(公告)号：EP4400636A1
公开(公告)日：2024-07-17
申请号：EP22867160.8
申请日：2022-08-18
发明人： HAGIMOTO Kazunori , KUBONO Ippei
摘要： The present invention provides a method for manufacturing a nitride semiconductor substrate in which a nitride semiconductor is formed on a substrate for film formation; the method includes (1) subjecting a substrate for film formation made of single-crystal silicon to heat treatment under a nitrogen atmosphere to form a silicon nitride film on the substrate for film formation, (2) growing an AlN film on the silicon nitride film, and (3) growing a GaN film, an AlGaN film, or both on the AlN film. This provides a method for manufacturing a nitride semiconductor substrate that can prevent diffusion of Al to the high-resistance single-crystal silicon substrate when the AlN layer is epitaxially grown on the high-resistance single-crystal silicon substrate, and the GaN or the AlGaN layer is epitaxially grown on top of that.
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公开(公告)号：EP4411032A1
公开(公告)日：2024-08-07
申请号：EP22875715.9
申请日：2022-09-02
发明人： HAGIMOTO, Kazunori
IPC分类号： C30B33/04 , H01L21/205 , H01L21/263 , H01L21/322 , C30B29/38
CPC分类号： C30B29/38 , C30B33/04 , H01L21/2015 , H01L21/263 , H01L21/322 , H01L21/324
摘要： The present invention is a method for manufacturing a nitride semiconductor wafer in which a nitride semiconductor film is formed on a silicon single-crystal substrate, the method including: a step of forming the nitride semiconductor film on the silicon single-crystal substrate; and a step of irradiating the silicon single-crystal substrate with electron beam so that the silicon single-crystal substrate has a higher resistivity than a resistivity before the irradiation, wherein a substrate doped with nitrogen at a concentration of 5×1014 atoms/cm3 or more and 5×1016 atoms/cm3 or less is used as the silicon single-crystal substrate. This provides a method for manufacturing a nitride semiconductor wafer having a nitride semiconductor film grown on a silicon single-crystal substrate, wherein the method makes it possible that a silicon single-crystal substrate having been irradiated with electron beam and thereby has an increased resistivity is prevented from recovering and having a lower resistivity during the epitaxial growth or other thermal treatment steps.
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公开(公告)号：EP4386813A1
公开(公告)日：2024-06-19
申请号：EP22855770.8
申请日：2022-07-14
IPC分类号： H01L21/205 , C23C16/44
CPC分类号： C30B25/10 , C30B25/08 , C23C16/44 , H01L21/2015
摘要： [Problem]
The present embodiments provide a reflector unit and a film forming apparatus that can sufficiently suppress heat conduction to a chamber and reduce the generation of stress on the chamber.
[Solution]
A reflector unit includes a cylindrical first reflector component having a first engagement portion on an outer circumference side to be supported by a film formation chamber and having a first mounting portion on an inner circumference side, and a cylindrical second reflector component arranged on an inner side of the first reflector component and having a second engagement portion on an outer circumference side to engage with the first reflector component on the first mounting portion to be supported by the first reflector component.-
5.发明公开
公开(公告)号：EP4372130A1
公开(公告)日：2024-05-22
申请号：EP22841918.0
申请日：2022-06-27
IPC分类号： C30B29/38 , H01L21/02 , H01L21/20 , H01L21/205 , H01L21/265 , H01L33/32
CPC分类号： C30B29/38 , H01L21/02 , H01L21/20 , H01L21/2015 , H01L21/265 , H01L33/32
摘要： The present invention is an epitaxial wafer for an ultraviolet ray emission device including: a first supporting substrate being transparent for ultraviolet ray and having heat resistance; a seed crystal layer of an AlxGa1-xN (0.5
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6.发明公开
公开(公告)号：EP4415025A1
公开(公告)日：2024-08-14
申请号：EP22878362.7
申请日：2022-09-26
发明人： KANEKO, Tadaaki , KOJIMA, Kiyoshi
IPC分类号： H01L21/205 , C30B29/36
CPC分类号： C30B29/36 , H01L21/2015
摘要： An object of the present invention is to provide a novel technique for improving an activation rate of dopant of an epitaxial layer. Another object of the present invention is to provide a novel technique for suppressing variation in activation rate of dopant in the epitaxial layer.
The present invention is a method for improving the activation rate of dopant of an epitaxial layer 20, including a growth step S10 of growing the epitaxial layer 20 having the dopant on a bulk layer 10 under an equilibrium vapor pressure environment.-
公开(公告)号：EP4407657A1
公开(公告)日：2024-07-31
申请号：EP22872620.4
申请日：2022-08-22
发明人： KUBONO Ippei , HAGIMOTO Kazunori
IPC分类号： H01L21/20 , C30B25/18 , C30B29/38 , H01L21/205
CPC分类号： C30B29/38 , C30B25/18 , H01L21/2015 , H01L21/20
摘要： The present invention provides a nitride semiconductor substrate including a growth substrate, and a nitride semiconductor thin film formed on the growth substrate, in which the nitride semiconductor thin film includes an AlN layer formed on the growth substrate and a nitride semiconductor layer formed on the AlN layer, and an average concentration of Y (Yttrium) in the AlN layer is 1E15 atoms/cm3 or higher and 5E19 atoms/cm3 or lower. Thereby, provided is a nitride semiconductor substrate capable of improving the surface morphology of an AlN layer, thereby suppressing the generation of pits on the surface of a nitride semiconductor epitaxial wafer, and a method for manufacturing the nitride semiconductor substrate.
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公开(公告)号：EP4394093A1
公开(公告)日：2024-07-03
申请号：EP22861137.2
申请日：2022-08-09
发明人： HAGIMOTO, Kazunori
IPC分类号： C30B29/38 , C30B25/02 , H01L21/205
CPC分类号： C30B25/02 , C30B29/38 , H01L21/2015
摘要： The present invention provides a nitride semiconductor substrate in which a nitride semiconductor thin film is formed on a substrate for film formation made of single-crystal silicon, in which a silicon nitride film is formed on an peripheral portion of the substrate for film formation, an AlN film is formed on the substrate for film formation and on the silicon nitride film, and the nitride semiconductor thin film is formed on the AlN film. This provides: a nitride semiconductor substrate without a reaction mark or a polycrystal growth portion on an edge portion when an AlN layer is epitaxially grown on a silicon substrate, and a GaN or AlGaN layers are epitaxially grown on top of that; and a method for manufacturing the nitride semiconductor substrate.
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公开(公告)号：EP4442868A1
公开(公告)日：2024-10-09
申请号：EP22900973.3
申请日：2022-10-25
摘要： The present invention is a nitride semiconductor substrate including: a silicon single-crystal substrate; and a nitride semiconductor thin film formed on the silicon single-crystal substrate, wherein the silicon single-crystal substrate has a carbon concentration of 5E16 atoms/cm3 or more and 2E17 atoms/cm3 or less. This provides a nitride semiconductor substrate resistant against plastic deformation and a manufacturing method therefor.
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公开(公告)号：EP4421221A1
公开(公告)日：2024-08-28
申请号：EP22883613.6
申请日：2022-10-19
申请人： NGK Insulators, Ltd.
发明人： URATA, Yuki , MATSUSHIMA, Kiyoshi , YOSHIKAWA, Jun
IPC分类号： C30B29/36 , H01L21/205
CPC分类号： C30B29/36 , H01L21/2015 , G01N21/6489 , H01L29/34 , H01L29/1608
摘要： There is provided a SiC substrate in which TSD density of the surface is very low. This substrate is a SiC substrate including a biaxially oriented SiC layer, wherein when a surface of the biaxially oriented SiC layer is analyzed by photoluminescence (PL) to obtain a graph by plotting PL intensity I as the vertical axis versus distance (µm) in the [11-20] direction as the horizontal axis, (i) the graph has a shape such that a maximum point and a minimum point are repeated, wherein the maximum point is defined as a point that gives PL intensity I higher than PL intensity I of any other point among six points in total consisting of points that are the first nearest, points that are the second nearest, and points that are the third nearest on the right and left of the maximum point, and the minimum point is defined as a point that gives PL intensity I lower than PL intensity I of any other point among six points in total consisting of points that are the first nearest, points that are the second nearest, and points that are the third nearest on the right and left of the minimum point, (ii) when a maximum value of PL intensity I at a given maximum point PM is assumed to be M, and a minimum value of PL intensity I at a minimum point Pm whose distance in the [11-20] direction is longer than that of the maximum point PM, and the minimum point Pm being present at a position nearest to the maximum point PM, is assumed to be m, a ratio of M/m is 1.05 or more, and (iii) distance L in the [11-20] direction between the maximum point PM and the minimum point Pm is 15 to 150 µm.
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