公开(公告)号：EP1051664A4

公开(公告)日：2005-06-15

申请号：EP99949992

申请日：1999-09-28

申请人： NIKON PREC INC ,  NIPPON KOGAKU KK

发明人： GRODNENSKY ILYA ,  SUWA KYOICHI ,  USHIDA KAZUO ,  JOHNSON ERIC R

IPC分类号： G03B27/72 ,  G03C5/00 ,  G03F7/20

CPC分类号： G03F7/70625 ,  G03F7/70591 ,  G03F7/706 ,  G03F7/70633 ,  G03F7/70683

摘要： A method for forming a critical dimension test mark, and the use of the mark to characterize and monitor imaging performance is provided. Methods in accordance with the present invention encompass an exposure of an essentially standard critical dimension bar at each of two overlapping orientations that are rotated about an axis with respect to each other. The overlapped portion forming a critical dimension test mark that is useful for enabling low cost, rapid determination of sub-micron critical dimensions for characterizing exposure tool imaging performance and in-process performance monitoring using optical measurement systems.

公开(公告)号：EP1039511A4

公开(公告)日：2005-03-02

申请号：EP98959158

申请日：1998-12-10

申请人： NIPPON KOGAKU KK

发明人： HIRUKAWA SHIGERU ,  SUWA KYOICHI ,  MURAKAMI SEIRO ,  NEI MASAHIRO

IPC分类号： G03F7/20 ,  H01L21/027

CPC分类号： G03F7/70058 ,  G03F7/70358 ,  G03F7/70475

摘要： A projection alignment apparatus in which a rectangular illumination region (21R) on a reticle (R) is illuminated with exposure light from an exposure light source (1), and while a pattern in the illuminated region (21R) is projected through a projection optical system (PL) onto a rectangular exposure region (21W) on a wafer (W), the reticle (R) and the wafer (W) are synchronously scanned relative to the projection optical system (PL) to transfer the pattern image of the reticle (R) onto a shot region on the wafer (W). The projection magnification of the projection optical system (PL) is set within a range of 1/5 to 1/10, and a reticle is used which is larger than, for instance, a 6 inch square (approximately 152 mm square).