INFECTION SPREAD PREVENTION SUPPORT SYSTEM, INFECTION SPREAD PREVENTION SUPPORT SERVER, EXAMINATION TERMINAL, MOBILE TERMINAL AND PROGRAM
    1.
    发明公开
    INFECTION SPREAD PREVENTION SUPPORT SYSTEM, INFECTION SPREAD PREVENTION SUPPORT SERVER, EXAMINATION TERMINAL, MOBILE TERMINAL AND PROGRAM 审中-公开
    系统支持增殖感染的预防,服务器支持增殖的感染,研究终端,移动终端和程序THEREFOR预防

    公开(公告)号:EP2590134A4

    公开(公告)日:2016-04-27

    申请号:EP11800897

    申请日:2011-06-29

    申请人: NIPPON KOGAKU KK

    IPC分类号: G06Q50/22 G06F19/00

    CPC分类号: G06F19/34 G06Q50/22

    摘要: An infection spread prevention support system includes an examination terminal and an infection spread prevention support server. The examination terminal includes an examination information acquisition unit that acquires examination information to examine the infection of an infectious disease in subjects and a transmission and reception unit that transmits the examination information to the infection spread prevention support server. The infection spread prevention support server includes a receiving unit that receives examination information, an infection determination unit that determines the presence or degree of infection of the infectious disease using the examination information, an activity regulation information generation unit that generates activity regulation information to regulate the an activity of the infected patient based on infection determination information, which is a determination result of the infection determination unit, and information regarding the subjects, and an output unit that outputs the activity regulation information.

    EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING DEVICE
    3.
    发明公开
    EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING DEVICE 审中-公开
    曝光装置及方法使设备

    公开(公告)号:EP1571695A4

    公开(公告)日:2008-10-15

    申请号:EP03777347

    申请日:2003-12-08

    申请人: NIPPON KOGAKU KK

    IPC分类号: G03F7/20 H01L21/027

    CPC分类号: G03F7/707 G03F7/70341

    摘要: An exposure apparatus exposes a substrate P by locally filling a side of an image plane of a projection optical system PL with a liquid 50 and projecting an image of a pattern onto the substrate P through the liquid 50 and the projection optical system PL. The exposure apparatus includes a recovery unit 20 which recovers the liquid 50 outflowed to the outside of the substrate P. When the exposure process is performed in accordance with the liquid immersion method, the pattern can be transferred accurately while suppressing any environmental change even when the liquid outflows to the outside of the substrate.

    EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING DEVICE
    4.
    发明公开
    EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING DEVICE 审中-公开
    EXPOSITIONSGERÜT及其制造方法

    公开(公告)号:EP1571696A4

    公开(公告)日:2008-03-26

    申请号:EP03777348

    申请日:2003-12-08

    申请人: NIPPON KOGAKU KK

    摘要: An exposure apparatus EX performs exposure for a substrate P by filling a space between a projection optical system PL and the substrate P with a liquid 50 and projecting an image of a pattern onto the substrate P through the liquid 50 by using the projection optical system PL. The exposure apparatus EX includes a substrate stage PST for holding the substrate P, a liquid supply unit 1 for supplying the liquid 50 to a side of an image plane of the projection optical system PL, and a focus/leveling-detecting system 14 for detecting surface information about a surface of the substrate P not through the liquid 50. The exposure apparatus EX performs liquid immersion exposure for the substrate P while adjusting a positional relationship between the surface of the substrate P and the image plane formed through the projection optical system PL and the liquid 50, on the basis of the surface information detected by the focus/leveling-detecting system 14. The liquid immersion exposure can be performed at a satisfactory pattern transfer accuracy.

    PROJECTION ALIGNER, PROJECTION EXPOSURE METHOD, OPTICAL CLEANING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    5.
    发明公开
    PROJECTION ALIGNER, PROJECTION EXPOSURE METHOD, OPTICAL CLEANING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 失效
    PROJEKTIONSAUSRICHTEINRICHTUNG,投射曝光过程中,生产半导体器件的光学清洗过程与方法

    公开(公告)号:EP1009020A4

    公开(公告)日:2005-05-04

    申请号:EP98933930

    申请日:1998-07-24

    申请人: NIPPON KOGAKU KK

    IPC分类号: G03F7/20 H01L21/027

    CPC分类号: G03F7/70241 G03F7/70941

    摘要: A photosensitive wafer is exposed to light of a target illuminance regardless of the variation of time-varying transmittance of an optical system as follows. 20,000 pulses are idly shot before starting exposure of a first wafer (25). At the time of the first and 20,000th pulse laser oscillations, the transmittances of the optical system are calculated at the two moments by acquiring the output signals from an integrator sensor (10) and an illuminance sensor (28), and then a predictive line of time-varying transmittance is calculated from the two transmittances. When the exposure is started, the transmittance of the optical system is calculated at the elapsed time of exposure from the predictive line of time-varying transmittance, and the intensity of exposing light is controlled. The illuminance on the wafer can be compensated for depending on the actual variation of the transmittance. The accumulated quantity of exposing light incident to the wafer (25) is regulated to ensure a target exposure dose of the wafer (25) regardless of the variation in the transmittance of an illumination optical system or a projection optical system during exposure.

    PROJECTION EXPOSURE METHOD AND PROJECTION ALIGNER
    6.
    发明公开
    PROJECTION EXPOSURE METHOD AND PROJECTION ALIGNER 审中-公开
    方法用于投影曝光和PROJEKTIONSAUSRICHTEINRICHTUNG

    公开(公告)号:EP1039511A4

    公开(公告)日:2005-03-02

    申请号:EP98959158

    申请日:1998-12-10

    申请人: NIPPON KOGAKU KK

    IPC分类号: G03F7/20 H01L21/027

    摘要: A projection alignment apparatus in which a rectangular illumination region (21R) on a reticle (R) is illuminated with exposure light from an exposure light source (1), and while a pattern in the illuminated region (21R) is projected through a projection optical system (PL) onto a rectangular exposure region (21W) on a wafer (W), the reticle (R) and the wafer (W) are synchronously scanned relative to the projection optical system (PL) to transfer the pattern image of the reticle (R) onto a shot region on the wafer (W). The projection magnification of the projection optical system (PL) is set within a range of 1/5 to 1/10, and a reticle is used which is larger than, for instance, a 6 inch square (approximately 152 mm square).