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1.发明公开Method for producing hydrogen gas separation material 有权Verfahren zur Herstellung von Wasserstoffgastrennmaterial
公开(公告)号：EP1982955A2
公开(公告)日：2008-10-22
申请号：EP08005906.6
申请日：2008-03-27
发明人： Yoshino, Yasushi
IPC分类号： C01B3/50
CPC分类号： C01B3/503 , B01D53/228 , B01D67/0072 , B01D71/027 , B01D2257/108 , B01D2325/20 , B01D2325/22 , C01B2203/0405 , C01B2203/0465 , C01B2203/0495 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2111/00801 , C23C16/045 , C23C16/402 , C04B41/4537 , C04B41/4582 , C04B41/5031 , C04B41/4539 , C04B41/522 , C04B41/4531 , C04B41/5035 , C04B35/10 , C04B35/00 , C04B38/0054
摘要： The invention provides a method for consistently producing a hydrogen gas separator with a good performance balance. The method includes the process for preparing a porous substrate and the process for forming a silica coat on the substrate by chemical vapor deposition in which a reaction is brought about between a silica source provided to one side of the substrate and an oxygen-containing gas supplied to the other side of the substrate. The vapor deposition process is carried out using as the silica source a silicon compound (a) with Si-Z-Si bonds (Z is O or N) in the molecule.
摘要翻译： 本发明提供了一种具有良好性能平衡的一致性生产氢气分离器的方法。 该方法包括制备多孔基材的方法和通过化学气相沉积在基材上形成二氧化硅涂层的方法，其中在提供给基材的一侧的二氧化硅源和提供的含氧气体之间产生反应 到基板的另一侧。 使用分子中具有Si-Z-Si键（Z为O或N）的硅化合物（a）作为二氧化硅源进行气相沉积工艺。
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公开(公告)号：EP1982955B1
公开(公告)日：2011-10-26
申请号：EP08005906.6
申请日：2008-03-27
发明人： Yoshino, Yasushi
CPC分类号： C01B3/503 , B01D53/228 , B01D67/0072 , B01D71/027 , B01D2257/108 , B01D2325/20 , B01D2325/22 , C01B2203/0405 , C01B2203/0465 , C01B2203/0495 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2111/00801 , C23C16/045 , C23C16/402 , C04B41/4537 , C04B41/4582 , C04B41/5031 , C04B41/4539 , C04B41/522 , C04B41/4531 , C04B41/5035 , C04B35/10 , C04B35/00 , C04B38/0054
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公开(公告)号：EP1982955A3
公开(公告)日：2010-03-31
申请号：EP08005906.6
申请日：2008-03-27
发明人： Yoshino, Yasushi
CPC分类号： C01B3/503 , B01D53/228 , B01D67/0072 , B01D71/027 , B01D2257/108 , B01D2325/20 , B01D2325/22 , C01B2203/0405 , C01B2203/0465 , C01B2203/0495 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2111/00801 , C23C16/045 , C23C16/402 , C04B41/4537 , C04B41/4582 , C04B41/5031 , C04B41/4539 , C04B41/522 , C04B41/4531 , C04B41/5035 , C04B35/10 , C04B35/00 , C04B38/0054
摘要： The invention provides a method for consistently producing a hydrogen gas separator with a good performance balance. The method includes the process for preparing a porous substrate and the process for forming a silica coat on the substrate by chemical vapor deposition in which a reaction is brought about between a silica source provided to one side of the substrate and an oxygen-containing gas supplied to the other side of the substrate. The vapor deposition process is carried out using as the silica source a silicon compound (a) with Si-Z-Si bonds (Z is O or N) in the molecule.
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