公开(公告)号：EP2541701A1

公开(公告)日：2013-01-02

申请号：EP11747126.8

申请日：2011-01-27

申请人： NTT Electronics Corporation

发明人： KOZEN, Atsuo ,  OTE, Yasuyoshi ,  ASAOKA, Jun-ichi ,  HIRAI, Kenji ,  YOKOYAMA, Hiroshi

IPC分类号： H01S5/12

CPC分类号： H01S5/1231 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3235 ,  H01S2304/04

摘要： The ridge semiconductor laser 301 is a semiconductor laser in which a carrier stopper layer 16 made of an AlInAs compound, a clad layer 17 made of an AlGaInAs compound, and an etching stopper layer 18 made of an InGaAsP compound are stacked in sequence on one side of an active layer 14 made of an AlGaInAs compound. The ridge semiconductor laser 301 is provided with a ridge waveguide 40 including, in a layer made of an InP compound, a diffraction grating 20' made of an InGaAsP compound on the opposite side of the clad layer 17 of the etching stopper layer 18.

摘要翻译： 脊状半导体激光器301是其中由AlInAs化合物制成的载流子停止层16，由AlGaInAs化合物制成的覆盖层17和由InGaAsP化合物制成的蚀刻停止层18依次层叠在一侧的半导体激光器 的由AlGaInAs化合物制成的有源层14。 脊状半导体激光器301设置有脊波导40，脊脊波导40包括在由InP化合物制成的层中，在蚀刻停止层18的包覆层17的相对侧上由InGaAsP化合物制成的衍射光栅20'。