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    SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明公开
    SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME 有权
    HERBLEITERLASER UND VERFAHREN ZU SEINER HERSTELLUNG

    公开(公告)号：EP2169792A4

    公开(公告)日：2014-02-12

    申请号：EP08765318

    申请日：2008-06-09

    申请人： QD LASER INC

    发明人： AKIYAMA TOMOYUKI ,  SUGAWARA MITSURU

    IPC分类号： H01S5/343 ,  B82Y20/00 ,  H01S5/065 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/34

    CPC分类号： B82Y20/00 ,  H01S5/0655 ,  H01S5/2086 ,  H01S5/2231 ,  H01S5/3412

    摘要： The present invention provides a semiconductor laser including a first conductive type of a lower clad layer 12, an active layer 14 provided on the lower clad layer 12, the active layer 14 including a plurality of quantum dots, and a second conductive type of an upper clad layer 18, the upper clad layer 18 being provided on the active layer 14 so as to have an isolated ridge portion 30 such that W1 ‰¤ Wtop + 0.4 µm where Wtop is the width of a top of the ridge portion 30 and W1 is the width of the ridge portion 30 at a height of 50 nm from a bottom of the ridge portion 30. The present invention also provides a method for manufacturing such a semiconductor laser.

    摘要翻译： 本发明提供一种半导体激光器，其包括第一导电类型的下包层12，设置在下包层12上的有源层14，包括多个量子点的有源层14和第二导电类型的上层 覆盖层18，上层包层18设置在有源层14上，以具有隔离的脊部30，使得Wtop为脊部30的顶部的宽度和W1的W1‰Wtop +0.4μm 脊部30的距离脊部30的底部的高度为50nm的宽度。本发明还提供一种制造这种半导体激光器的方法。

    RIDGE SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING A RIDGE SEMICONDUCTOR LASER
    5.
    发明公开
    RIDGE SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING A RIDGE SEMICONDUCTOR LASER 审中-公开
    维多利亚州圣诞节圣诞节圣诞节圣诞老人

    公开(公告)号：EP2541701A1

    公开(公告)日：2013-01-02

    申请号：EP11747126.8

    申请日：2011-01-27

    申请人： NTT Electronics Corporation

    发明人： KOZEN, Atsuo ,  OTE, Yasuyoshi ,  ASAOKA, Jun-ichi ,  HIRAI, Kenji ,  YOKOYAMA, Hiroshi

    IPC分类号： H01S5/12

    CPC分类号： H01S5/1231 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3235 ,  H01S2304/04

    摘要： The ridge semiconductor laser 301 is a semiconductor laser in which a carrier stopper layer 16 made of an AlInAs compound, a clad layer 17 made of an AlGaInAs compound, and an etching stopper layer 18 made of an InGaAsP compound are stacked in sequence on one side of an active layer 14 made of an AlGaInAs compound. The ridge semiconductor laser 301 is provided with a ridge waveguide 40 including, in a layer made of an InP compound, a diffraction grating 20' made of an InGaAsP compound on the opposite side of the clad layer 17 of the etching stopper layer 18.

    摘要翻译： 脊状半导体激光器301是其中由AlInAs化合物制成的载流子停止层16，由AlGaInAs化合物制成的覆盖层17和由InGaAsP化合物制成的蚀刻停止层18依次层叠在一侧的半导体激光器 的由AlGaInAs化合物制成的有源层14。 脊状半导体激光器301设置有脊波导40，脊脊波导40包括在由InP化合物制成的层中，在蚀刻停止层18的包覆层17的相对侧上由InGaAsP化合物制成的衍射光栅20'。

    VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING APPARATUS
    6.
    发明公开
    VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING APPARATUS 有权
    OBERFLÄCHENEMITTIERENDES垂直谐振器激光器元件中，OBERFLÄCHENEMITTIERENDES垂直谐振器激光器阵列，光学扫描及摄像装置

    公开(公告)号：EP2409370A1

    公开(公告)日：2012-01-25

    申请号：EP09841922.9

    申请日：2009-12-22

    申请人： Ricoh Company Ltd.

    发明人： HANAOKA, Katsunari

    IPC分类号： H01S5/183 ,  B41J2/44 ,  G03G15/04 ,  H01S5/022 ,  H01S5/42

    CPC分类号： B41J2/442 ,  B41J2/455 ,  B41J2/473 ,  H01S5/18311 ,  H01S5/18352 ,  H01S5/2086 ,  H01S5/423

    摘要： A disclosed vertical cavity surface emitting laser element includes a substrate, a laminated body sandwiching a semiconductor active layer with an upper reflecting mirror and a lower reflecting mirror, a lower electrode, and an upper electrode. The laser element emits laser light in a direction perpendicular to the surface of the substrate when an electric current is supplied between the upper electrode and the lower electrode. The laser element further includes a selective oxidation layer in the upper reflecting mirror having a current blocking structure made of an oxidized region and an unoxidized region, and a detectable portion formed on a side surface of a mesa structure shaped by the upper reflecting mirror including the selective oxidation layer and the active layer, thereby enabling detecting the position of the selective oxidation layer from a top of the laminated body in a depth direction of the laminated body.

    SURFACE-EMITTING LASER AND LASER PROJECTOR
    7.
    发明公开
    SURFACE-EMITTING LASER AND LASER PROJECTOR 有权
    激光打标机

    公开(公告)号：EP1710877A1

    公开(公告)日：2006-10-11

    申请号：EP04807417.3

    申请日：2004-12-21

    申请人： Matsushita Electric Industries Co., Ltd.

    发明人： MIZUUCHI, K. c/o Matsushita Electric Ind. Co., Ltd ,  KASAZUMI, K. c/o Matsushita Electric Ind. Co., Ltd ,  MORIKAWA, A. c/o Matsushita Electric Ind. Co., Ltd

    IPC分类号： H01S5/183 ,  H01S5/042 ,  G02F1/37

    CPC分类号： H01S5/18386 ,  H01S3/109 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/14 ,  H01S5/18391 ,  H01S5/2086 ,  H01S5/4062 ,  H01S5/423 ,  H01S2301/166

    摘要： A surface emitting laser (100a) includes an active layer (3) disposed on a semiconductor substrate (2a), and a pair of upper and lower electrodes (5,6) for injecting carriers into the active layer (3). The plane surface of the lower electrode (6) is shaped into a star so that injection of current into the active layer (3) from the lower electrode (6) is carried out with a high density at the center of the lower electrode (6) and with a low density at its periphery part. In the surface emitting laser (100a), the density distribution of the carriers injected into the active layer corresponds to the power distribution of light inside the active layer. Thereby, hole burning due to an increase in the current density in the region of the active layer corresponding to the peripheral part of the electrode is avoided, and the transverse mode stability during high output operation is significantly enhanced to improve high-output characteristic.

    摘要翻译： 表面发射激光器（100a）包括设置在半导体衬底（2a）上的有源层（3）和用于将载流子注入有源层（3）的一对上下电极（5,6）。 下电极（6）的平面被成形为星形，从而在下电极（6）的中心以高密度从下电极（6）注入电流到有源层（3） ）并且在其周边部分具有低密度。 在表面发射激光器（100a）中，注入有源层的载流子的密度分布对应于有源层内的光的功率分布。 因此，避免了由于与电极的周边部分相对应的有源层的区域中的电流密度的增加而导致的空穴燃烧，并且显着增强了高输出操作期间的横向模式稳定性，从而提高了高输出特性。

    Surface-emitting light source and method for manufacturing the same
    8.
    发明公开
    Surface-emitting light source and method for manufacturing the same 有权
    表面发射光源及其制造方法

    公开(公告)号：EP1622238A2

    公开(公告)日：2006-02-01

    申请号：EP05014632.3

    申请日：2005-07-06

    申请人： SEIKO EPSON CORPORATION

    发明人： Nishida, Tetsuo ,  Onishi, Hajime

    IPC分类号： H01S5/183

    CPC分类号： H01L33/38 ,  H01L24/24 ,  H01L25/167 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01S5/0224 ,  H01S5/0261 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/0427 ,  H01S5/06825 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/2086 ,  H01S5/2213 ,  H01S5/32316 ,  H01S2301/176 ,  H01L2924/00

    摘要： To prevent electrostatic breakdown and improve reliability concerning surface-emitting type devices and methods for manufacturing the same.
    A surface-emitting type device includes a substrate (10), a light emitting element section (20) above the substrate (10), including a first semiconductor section (22) of a first conductivity type, a second semiconductor section (24) that functions as an active layer, and a third semiconductor section (26), (28) of a second conductivity type which are disposed from the side of the substrate (10), a rectification element section (40) above the substrate (10), including a first supporting section (42) composed of an identical composition of the first semiconductor section (22), a second supporting section (44) composed of an identical composition of the second semiconductor section (24), a fourth semiconductor section (46, 48), and a fifth semiconductor section (50), which are disposed from the side of the substrate (10), and first and second electrodes (30), (32) for driving the light emitting element section (20). The fourth and fifth semiconductor sections (46, 48, 50) are connected in parallel between the first and second electrodes (30, 32), and have a rectification action in a reverse direction with respect to the light emitting element section (20).

    摘要翻译： 为了防止静电击穿和提高表面发射型器件的可靠性及其制造方法。 一种表面发射型器件包括衬底（10），衬底（10）上方的发光元件部分（20），该发光元件部分包括第一导电类型的第一半导体部分（22），第二半导体部分（24） 具有作为活性层的功能，以及从基板（10）侧配置的第2导电型的第3半导体部（26），（28），在基板（10）的上方的整流元件部（40） 包括由第一半导体部分（22）的相同组成构成的第一支撑部分（42），由与第二半导体部分（24）相同组成构成的第二支撑部分（44），第四半导体部分（46） 以及第五半导体部分50以及用于驱动发光元件部分20的第一和第二电极30和32。 第四和第五半导体部分（46,48,50）并联连接在第一和第二电极（30,32）之间，并且相对于发光元件部分（20）在相反方向上具有整流作用。

    SEMICONDUCTOR LASER
    10.
    发明公开
    SEMICONDUCTOR LASER 有权
    HALBLEITERLASER

    公开(公告)号：EP1120872A4

    公开(公告)日：2005-09-21

    申请号：EP99943254

    申请日：1999-09-09

    申请人： SHARP KK

    发明人： TANEYA MOTOTAKA ,  TAKATANI KUNIHIRO ,  OHMI SUSUMU

    IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01S5/0021 ,  H01S5/2004 ,  H01S5/2086 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/2218 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/32325 ,  H01S5/32341 ,  H01S5/34333

    摘要： An InGaAl semiconductor laser comprising a first layer of first conductivity type, an active layer whose forbidden band width is narrower than that of the first layer, and a second layer of second conductivity type whose forbidden band width is wider than that of the active layer, wherein the second layer has a planar portion and a stripelike projection structure, a stripelike optical waveguide forming layer of the second conductivity type having a larger refractive index than that of the second layer is formed on the stripelike projection structure, a current-constricting layer of the first conductivity type or of a high resistance covering the top of the planar portion of the second layer, the side of the projection structure of the second layer, and the side of the optical waveguide is formed, and the difference between the thermal expansion coefficient of the current constricting layer and that of the second layer is in the range of -4x10-9/°C to +4x10-9/°C.

    摘要翻译： 一种InGaAl半导体激光器，其特征在于，具有第一导电型的第一层，禁带宽度比第一层窄的有源层，禁带宽度比有源层宽的第二导电型的第二层， 其中所述第二层具有平面部分和条状突出结构，在所述条状突出结构上形成折射率大于所述第二层的第二导电类型的条状光波导形成层，电流约束层 形成覆盖第二层的平面部分的顶部，第二层的投影结构的侧面和光波导的侧面的第一导电类型或高电阻，并且热膨胀系数 目前的收缩层的厚度和第二层的收缩率在-4×10-9 /℃至+ 4×10-9 /℃的范围内。