公开(公告)号：EP2206154A1

公开(公告)日：2010-07-14

申请号：EP08843598.7

申请日：2008-10-22

申请人： NXP B.V.

发明人： PEAKE, Steven, Thomas ,  RUTTER, Philip ,  ROGERS, Christopher ,  DROBNIS, Miron ,  BUTLER, Andrew

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L21/336 ,  H01L29/423 ,  H01L21/265 ,  H01L21/225

CPC分类号： H01L29/7813 ,  H01L21/2251 ,  H01L21/26586 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734

摘要： A Trench gate MOS field-effect transistor having a narrow, lightly doped, region extending from a channel accommodating region (3) of same conductivity type immediately adjacent the trench sidewall. The narrow region may be self-aligned to the top of a lower polysilicon shield region in the trench or may extend the complete depth of the trench. The narrow region advantageously relaxes the manufacturing tolerances, which otherwise require close alignment of the upper polysilicon trench gate to the body-drain junction.

公开(公告)号：EP2206154B1

公开(公告)日：2011-06-29

申请号：EP08843598.7

申请日：2008-10-22

申请人： NXP B.V.

发明人： PEAKE, Steven, Thomas ,  RUTTER, Philip ,  ROGERS, Christopher ,  DROBNIS, Miron ,  BUTLER, Andrew

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L21/336 ,  H01L21/265 ,  H01L21/225

CPC分类号： H01L29/7813 ,  H01L21/2251 ,  H01L21/26586 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734

摘要： A Trench gate MOS field-effect transistor having a narrow, lightly doped, region extending from a channel accommodating region (3) of same conductivity type immediately adjacent the trench sidewall. The narrow region may be self-aligned to the top of a lower polysilicon shield region in the trench or may extend the complete depth of the trench. The narrow region advantageously relaxes the manufacturing tolerances, which otherwise require close alignment of the upper polysilicon trench gate to the body-drain junction.