公开(公告)号：EP2049950A2

公开(公告)日：2009-04-22

申请号：EP07805270.1

申请日：2007-07-31

申请人： NXP B.V.

发明人： KWINTEN, Hans ,  ZANDBERGEN, Peter ,  VAN STEENWINCKEL, David ,  VANLEENHOVE, Anja

IPC分类号： G03F7/38

CPC分类号： G03F7/38

摘要： The invention relates to a method of photolithography comprising the steps of: providing a substrate and forming a layer of a photoresist (100) on the substrate, performing a first exposure (120) in which a predetermined part of the layer of photoresist is irradiated through a mask having a pattern for forming a latent image of said pattern in the layer of the photoresist, performing a pretreatment (130) on the layer of the photoresist to remove a predetermined part of the latent image before performing the fixation (140). The method provides an improved process window. The invention further relates to a photoresist for use within the method of the invention.