公开(公告)号：EP2092393A2

公开(公告)日：2009-08-26

申请号：EP07849107.3

申请日：2007-11-13

申请人： NXP B.V.

发明人： VANLEENHOVE, Anja Monique ,  DIRKSEN, Peter ,  VAN STEENWINCKEL, David ,  VAN DAL, Mark ,  DOORNBOS, Gerben ,  JUFFERMANS, Casper

IPC分类号： G03F7/00

CPC分类号： G03F7/0035 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/823821 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/785

摘要： A method of forming a pattern in at least one device layer in or on a substrate comprises: coating the device layer with a first photoresist layer; exposing the first photoresist using a first mask; developing the first photoresist layer to form a first pattern on the substrate; coating the substrate with a protection layer; treating the protection layer to cause a change therein where it is in contact with the first photoresist, to render the changed protection layer substantially immune to a subsequent exposure and / or developing step; coating the substrate with a second photoresist layer; exposing the second photoresist layer using a second mask; and developing the second photoresist layer to form a second pattern on the substrate without significantly affecting the first pattern in the first photoresist layer, wherein the first and second patterns together define interspersed features having a spatial frequency greater than that of the features defined in each of the first and second patterns separately. The process has particular utility in defining source, drain and fin features of finFET devices with a smaller feature size than otherwise achievable with the prevailing lithography tools.

公开(公告)号：EP2245904A2

公开(公告)日：2010-11-03

申请号：EP09706157.6

申请日：2009-01-27

申请人： NXP B.V.

发明人： NGUYEN HOANG, Viet ,  SURDEANU, Radu ,  BANCKEN, Pascal ,  BATAILLOU, Benoit ,  VAN STEENWINCKEL, David

IPC分类号： H05B33/08

CPC分类号： H05B33/0818 ,  G01K7/01 ,  H05B33/0866 ,  H05B33/089

摘要： A method of estimating the junction temperature of a light emitting diode comprises driving a forward bias current through the diode, the current comprising a square wave which toggles between high and low current values (Ihigh, llow), the high current value (lhigh) comprising an LED operation current, and the low current value (ILOW) comprising a non-zero measurement current. The forward bias voltage drop (Vf) is sampled and the forward bias voltage drop (Vflow) is determined at the measurement current (ILOW)-The temperature is derived from the determined forward bias voltage drop.

公开(公告)号：EP1849041B1

公开(公告)日：2008-11-19

申请号：EP05801154.5

申请日：2005-11-10

申请人： NXP B.V.

发明人： VAN STEENWINCKEL, David ,  ZANDBERGEN, Peter

IPC分类号： G03F7/30

CPC分类号： G03F7/30 ,  G03F7/095 ,  G03F7/32

摘要： A method of achieving frequency doubled lithographic patterning is described. An optical pattern (16) having a first period (p 1 ) is used to expose conventional acid-catalysed photoresist (18) on substrate (20), leaving regions of high exposure (24), regions of low exposure (26) and intermediate regions (22). Processing proceeds leaving regions (24) which received high exposure very polar, i.e. hydrophilic, regions (26) of low exposure very apolar, i.e. hydrophobic, and the intermediate regions having intermediate polarity. A developer of intermediate polarity such as propylene glycol methyl ether acetate is then used to dissolve only the intermediate regions (22) leaving photoresist patterned to have a pitch (p 2 ) half that of the optical period (p 1 ). Alternatively, the photoresist is removed from the apolar and polar regions leaving only the intermediate regions (22) again with the same pitch (p 2 ) half that of the optical period (p 1 ).

公开(公告)号：EP2245905B1

公开(公告)日：2019-05-22

申请号：EP09709781.0

申请日：2009-02-09

申请人： NXP B.V.

发明人： SURDEANU, Radu ,  NGUYEN HOANG, Viet ,  BATAILLOU, Benoit ,  BANCKEN, Pascal ,  VAN STEENWINCKEL, David

IPC分类号： G01R31/26 ,  H01L33/00 ,  H05B33/08

公开(公告)号：EP2307851A1

公开(公告)日：2011-04-13

申请号：EP09773006.3

申请日：2009-07-01

申请人： NXP B.V.

发明人： BATAILLOU, Benoit ,  BANCKEN, Pascal ,  NGUYEN HOANG, Viet ,  SURDEANU, Radu ,  VAN STEENWINCKEL, David

IPC分类号： G01B9/02 ,  G01N21/45 ,  G01N15/14

CPC分类号： C09K11/06 ,  G01N15/1459 ,  G01N21/45 ,  G01N2021/458

摘要： An apparatus comprising at least one measuring cell (10) is disclosed. The measuring cell comprisesa first cavity (16 and a second cavity (18) perpendicular to the first cavity, the first cavity and the second cavity comprising an overlap at first respective ends and a reflective surface (20) at the opposite respective ends. A beam splitter (15) is located in the overlap and an electromagnetic radiation source (12) is arranged to project a beam of electromagnetic radiation onto the beam splitter (15) such that the beam is projected into each ofthe cavities. A phase detector (22) for detecting a phase difference between the respective electromagnetic radiation reflected by the first and second cavity (16; 18) is also provided. In addition, the apparatus has a fluid channel (26), at least a part of which runs parallel to the first cavity (16) such that the electromagnetic radiation projected into thefirst cavity extends into said part ofthe fluid channel. This allows for the interferometric detection of particles in the fluid channel.

公开(公告)号：EP2286193A1

公开(公告)日：2011-02-23

申请号：EP09754271.6

申请日：2009-05-21

申请人： NXP B.V.

发明人： NGUYEN HOANG, Viet ,  SURDEANU, Radu ,  BANCKEN, Pascal ,  BATAILLOU, Benoit ,  VAN STEENWINCKEL, David

IPC分类号： G01J1/04 ,  G01J1/02 ,  H05B33/08 ,  G01J1/42

CPC分类号： H05B33/0869 ,  G01J1/02 ,  G01J1/0209 ,  G01J1/04 ,  G01J1/0407 ,  G01J1/0425 ,  G01J1/32 ,  G01J2001/4247 ,  H05B33/0821

摘要： A light sensor device comprises a substrate (10) having a well (12) defined in one surface. At least one light sensor (14) is formed at the base of the well (12), and an optical light guide (18) in the form of a transparent tunnel (18) within an opaque body (20) extends from a top surface of the device down a sloped side wall of the well (12) to the location of the light sensor (14).

公开(公告)号：EP2245905A2

公开(公告)日：2010-11-03

申请号：EP09709781.0

申请日：2009-02-09

申请人： NXP B.V.

发明人： SURDEANU, Radu ,  NGUYEN HOANG, Viet ,  BATAILLOU, Benoit ,  BANCKEN, Pascal ,  VAN STEENWINCKEL, David

IPC分类号： H05B33/08

CPC分类号： H05B33/0866 ,  G01R31/2635 ,  H01L33/002 ,  H01L33/0095

摘要： A method of determining the dominant output wavelength of an LED, includes determining an electrical characteristic of the LED which is dependent on the voltage-capacitance characteristics, and analyzing the characteristic to determine the dominant output wavelength.

公开(公告)号：EP2049950A2

公开(公告)日：2009-04-22

申请号：EP07805270.1

申请日：2007-07-31

申请人： NXP B.V.

发明人： KWINTEN, Hans ,  ZANDBERGEN, Peter ,  VAN STEENWINCKEL, David ,  VANLEENHOVE, Anja

IPC分类号： G03F7/38

CPC分类号： G03F7/38

摘要： The invention relates to a method of photolithography comprising the steps of: providing a substrate and forming a layer of a photoresist (100) on the substrate, performing a first exposure (120) in which a predetermined part of the layer of photoresist is irradiated through a mask having a pattern for forming a latent image of said pattern in the layer of the photoresist, performing a pretreatment (130) on the layer of the photoresist to remove a predetermined part of the latent image before performing the fixation (140). The method provides an improved process window. The invention further relates to a photoresist for use within the method of the invention.

公开(公告)号：EP1927030A1

公开(公告)日：2008-06-04

申请号：EP06795913.0

申请日：2006-09-05

申请人： NXP B.V.

发明人： ZANDBERGEN, Peter ,  LAMMERS, Jeroen, H. ,  VAN STEENWINCKEL, David

IPC分类号： G03F7/039 ,  G03F7/038

CPC分类号： G03F7/0392 ,  G03F7/0382

摘要： The present invention provides a method of lithographic patterning. The method comprisese: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; exposing the photoresist (18) to actinic radiation through a mask pattern (12); carrying out a post-exposure bake; and then developing the photoresist (18) with a developer to remove a portion of the photoresist which has been rendered soluble in the developer. Either the polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and by the action of the quencher during the bake, or the polymer resin is soluble in the developer prior to exposure to actinic radiation and rendered substantially insoluble in the developer by the action of the catalyst, and by the action of the quencher during the bake.

公开(公告)号：EP1927029A1

公开(公告)日：2008-06-04

申请号：EP06795912.2

申请日：2006-09-05

申请人： NXP B.V.

发明人： ZANDBERGEN, Peter ,  LAMMERS, Jeroen, H. ,  VAN STEENWINCKEL, David

IPC分类号： G03F7/039

CPC分类号： G03F7/0392

摘要： The present invention provides a method of lithographic patterning in order to the strength of the patterned photoresist. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; and exposing the photoresist (18) to actinic radiation through a mask pattern (12). This is followed, in either order, by carrying out a post-exposure bake; and developing the photoresist (18) with a developer to remove a portion of the photoresist which has been exposed to the actinic radiation. The polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and wherein the polymer resin is crosslinked by the action of the quencher during the bake.

摘要翻译： 本发明提供了一种光刻图案化的方法，以便图案化的光刻胶的强度。 该方法包括：向待图案化的表面施加包含聚合物树脂的光致抗蚀剂（18），暴露于光化辐射时产生催化剂的光催化剂发生器和猝灭剂; 并通过掩模图案（12）将光致抗蚀剂（18）暴露于光化辐射。 接着按照任意顺序进行曝光后烘焙; 以及用显影剂显影光致抗蚀剂（18）以去除已经暴露于光化辐射的光致抗蚀剂的一部分。 聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂中，并且通过催化剂的作用使其溶于显影剂中，并且其中聚合物树脂在烘烤过程中通过淬灭剂的作用而交联。