公开(公告)号：EP4199102A1

公开(公告)日：2023-06-21

申请号：EP22214163.2

申请日：2022-12-16

申请人： NXP USA, Inc.

发明人： GROTE, Bernhard ,  RENAUD, Philippe ,  KABIR, Humayun ,  GREEN, Bruce McRae ,  KHALIL, Ibrahim

IPC分类号： H01L29/41 ,  H01L29/423 ,  H01L21/338 ,  H01L29/778 ,  H01L29/20

摘要： Relative positioning of a control electrode (130) and a field plate (150) is determined by a single processing step such that the field plate is self-aligned to the control electrode in order to reduce variations in transistor performance associated with manufacturing process variations.

公开(公告)号：EP3621117A1

公开(公告)日：2020-03-11

申请号：EP19194464.4

申请日：2019-08-29

申请人： NXP USA, Inc.

发明人： RENAUD, Philippe

IPC分类号： H01L29/423 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78

摘要： A semiconductor device, such as a laterally diffused metal-oxide-semiconductor (LDMOS) transistor, includes a semiconductor substrate in which a source region and a drain region are disposed. The drain region has a drain finger terminating at a drain end. A gate structure is supported by the semiconductor substrate between the source region and the drain region, the gate structure extending laterally beyond the drain end. A drift region in the semiconductor substrate extends laterally from the drain region to at least the gate structure. The drift region is characterized by a first distance between a first sidewall of the drain finger and a second sidewall of the gate structure, and the gate structure is laterally tilted away from the drain region at the drain end of the drain finger to a second distance that is greater than the first distance.

公开(公告)号：EP2502274B1

公开(公告)日：2019-07-31

申请号：EP09851400.3

申请日：2009-11-19

申请人： NXP USA, Inc.

发明人： RENAUD, Philippe ,  GREEN, Bruce

IPC分类号： H01L29/778 ,  H01L21/338 ,  H01L29/20 ,  H01L29/417

公开(公告)号：EP2394299B8

公开(公告)日：2017-01-25

申请号：EP09786348.4

申请日：2009-02-03

申请人： NXP USA, Inc.

发明人： RENAUD, Philippe

IPC分类号： H01L29/417 ,  H01L29/51 ,  H01L29/66 ,  H01L29/778 ,  H01L29/872 ,  H01L29/20 ,  H01L21/74 ,  H01L27/06 ,  H01L29/08

CPC分类号： H01L29/0847 ,  H01L21/746 ,  H01L27/0605 ,  H01L27/0629 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/872

摘要： A monolithic semiconductor structure includes a stack of layers. The stack includes a substrate; a first layer made from a first semiconductor material; and a second layer made from a second semiconductor material. The first layer is situated between the substrate and the second layer and at least one of the first semiconductor material and the second semiconductor material contains a III-nitride material. The structure includes a power transistor, including a body formed in the stack of layers; a first power terminal at a side of the first layer facing the second layer; a second power terminal at least partly formed in the substrate; and a gate structure for controlling the propagation through the body of electric signals between the first power terminal and the second power terminal. The structure further includes a vertical Schottky diode, including: an anode; a cathode including the substrate, and a Schottky barrier between the cathode and the anode, the Schottky barrier being situated between the substrate and a anode layer in the stack of layers.

摘要翻译： 单片半导体结构包括一叠层。 所述堆叠包括基板; 由第一半导体材料制成的第一层; 以及由第二半导体材料制成的第二层。 第一层位于衬底和第二层之间，并且第一半导体材料和第二半导体材料中的至少一个含有III族氮化物材料。 该结构包括功率晶体管，其包括形成在层叠层中的主体; 位于所述第一层的面向所述第二层的一侧的第一电源端子; 至少部分地形成在所述基板中的第二电源端子; 以及栅极结构，用于控制在第一电力端子和第二电力端子之间通过电信号的主体的传播。 该结构还包括垂直肖特基二极管，包括：阳极; 包括衬底的阴极和阴极和阳极之间的肖特基势垒，肖特基势垒位于衬底和层叠层中的阳极层之间。