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1.发明公开METHODS FOR WRITING AND READING HIGHLY RESOLVED DOMAINS FOR HIGH DENSITY DATA STORAGE 审中-公开方法写入和读出高清晰度的网域高密度数据存储
公开(公告)号：EP1756808A2
公开(公告)日：2007-02-28
申请号：EP05736318.6
申请日：2005-04-15
申请人： NanoChip, Inc.
CPC分类号： B82Y10/00 , G11B9/149 , G11C13/0004
摘要： Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip having a substantially larger radius of curvature than the resolved portion can be employed by applying such methods. A substantially anisotropic columnar material can focus a current applied between the tip and the media so that the portion is narrower in width than the radius of curvature. Such highly resolved portions form bits in the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.
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2.发明公开
公开(公告)号：EP1561221A2
公开(公告)日：2005-08-10
申请号：EP03776378.6
申请日：2003-10-15
申请人： Nanochip, Inc.
发明人： RUST, Thomas, F.
IPC分类号： G11C13/00
CPC分类号： G11C23/00 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11C13/0014
摘要： Memory devices in accordance with the present invention can comprise a molecular memory integrated circuit including a set of actuators (106, 222-232, 322-332, 422-432) capable of moving one or more platforms (108, 208, 308, 408). In one embodiment the platforms can include either a memory device or a Molecular Array Read/Write Engine (MARE) with a cantilever system having at least one cantilever tip (342, 542). When a first platform with a memory device is brought within close proximity of a second platform with a MARE, the actuators can position the cantilever tip (342, 352) to a specific location on the memory device. The tip of the cantilever can perform a number of functions to the memory device, including reading the state of the memory device or changing the state of the memory device. This description is not intended to be a complete description of, or limit the scope of, the invention.
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公开(公告)号：EP1576588A2
公开(公告)日：2005-09-21
申请号：EP03777626.7
申请日：2003-10-15
申请人： NanoChip, Inc.
发明人： RUST, Thomas, F.
IPC分类号： G11B3/00
摘要： A media device (300) in accordance with embodiments of the present invention can provide high density data storage. In one embodiment such a media device can include a phase change media (306) having altered resistivity where data is written to the media. The media can include an overcoat (308) to reduce physical damage inflicted on the media from a device such as a cantilever tip in a molecular memory integrated circuit used to write to or read from the media. Data written to the media can be exist in multiple state, allowing digital and/or analog data to be stored on the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.
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