公开(公告)号：EP1454879A1

公开(公告)日：2004-09-08

申请号：EP02788766.0

申请日：2002-12-10

申请人： National Institute of Advanced Industrial Science and Technology

发明人： YASUDA, T., Nat. Inst. of Advanced Ind. Science & ,  NISHIZAWA, M., Nat. Inst. of Advanced Ind. Science ,  YAMASAKI, S., Nat. Inst. of Advanced Ind. Science

IPC分类号： C01B13/14 ,  C01B13/32 ,  C01B33/12 ,  H01L29/78 ,  H01L21/316

CPC分类号： C23C30/00 ,  C23C8/02 ,  C23C8/16 ,  C23C26/00 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3165

摘要： In a method of manufacturing oxide thin film by adsorbing or depositing oxide forming starting material on a substrate followed by oxide formation, by using water in a liquid state to manufacture the oxide thin film, the advantages of the ALD method are utilized while resolving the tendency to leave impurities in the oxide film produced that is a drawback thereof, so that oxide thin film can be obtained having a reduced concentration of impurities.

摘要翻译： 在通过在基板上吸附或沉积氧化物形成原料而形成氧化物的方法中，通过使用液态的水来制造氧化物薄膜，利用ALD方法的优点，同时解决倾向 在所生产的氧化膜中留下杂质是其缺点，从而可以获得具有降低的杂质浓度的氧化物薄膜。