公开(公告)号：EP1691404A3

公开(公告)日：2008-11-19

申请号：EP06250762.9

申请日：2006-02-13

申请人： Samsung Electronics Co., Ltd.

发明人： Min, Yo-sep ,  Cho, Young-jin

IPC分类号： H01L21/314 ,  H01L21/316

CPC分类号： C23C16/40 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31691 ,  H01L28/55

摘要： An amorphous high-k thin film for a semiconductor device and a manufacturing method thereof are provided. The amorphous high-k thin film includes Bi, Ti, Al, and O. Since a BTAO based amorphous dielectric thin film is used as a dielectric material of a DRAM capacitor, a dielectric constant is more than 25, and an increase of a leakage current caused in reducing a physical thickness of the dielectric thin film can be prevented. Accordingly, it is very useful for integration of the semiconductor device.

公开(公告)号：EP1495153B1

公开(公告)日：2008-10-15

申请号：EP03737955.9

申请日：2003-04-15

申请人： Schott AG

发明人： MUND, Dietrich ,  LEIB, Jürgen

IPC分类号： C23C14/10

CPC分类号： H01L23/481 ,  B81C1/00269 ,  B81C2203/019 ,  B81C2203/031 ,  C03B19/00 ,  C03C4/12 ,  C03C14/006 ,  C03C15/00 ,  C03C17/02 ,  C03C17/34 ,  C03C2214/16 ,  C03C2217/21 ,  C03C2217/77 ,  C03C2218/15 ,  C03C2218/32 ,  C03C2218/328 ,  C03C2218/33 ,  C03C2218/355 ,  C23C14/10 ,  H01L21/02129 ,  H01L21/02145 ,  H01L21/02161 ,  H01L21/02266 ,  H01L21/31616 ,  H01L21/31625 ,  H01L21/50 ,  H01L21/56 ,  H01L23/10 ,  H01L23/291 ,  H01L23/3114 ,  H01L23/49894 ,  H01L51/5203 ,  H01L51/5253 ,  H01L51/5262 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K3/28 ,  H01L2924/00

摘要： A process for producing a coated substrate or a product having a coated substrate is provided. The process includes coating at least one metallic surface with a glass, the substrate being coated with an evaporation-coating glass at least on the metallic surface.

公开(公告)号：EP1955366A1

公开(公告)日：2008-08-13

申请号：EP06837855.3

申请日：2006-11-17

申请人： Intel Corporation

发明人： BRASK, Justin, K. ,  DATTA, Suman ,  DOCZY, Mark, L. ,  BLACKWELL, James, M. ,  METZ, Matthew, V. ,  KAVALIEROS, Jack, T. ,  CHAU, Robert, S.

IPC分类号： H01L21/314 ,  H01L29/51 ,  H01L21/28

CPC分类号： H01L21/314 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/28008 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31645 ,  H01L29/2003 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7784

摘要： A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.

公开(公告)号：EP1652226A2

公开(公告)日：2006-05-03

申请号：EP04780037.0

申请日：2004-08-03

申请人： ASM America, Inc.

发明人： WILK, Glen

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： H01L21/31658 ,  C23C16/0245 ,  C23C16/0281 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/28158 ,  H01L21/28194 ,  H01L21/28255 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66477

摘要： Methods are provided for treating germanium surfaces (200) in preparation for subsequent deposition, particularly gate dielectric deposition by atomic layer deposition (ALD). Prior to depositing, the germanium surface (200) is treated with plasma products or thermally reacted with vapor reactants. Examples of surface treatments leave oxygen bridges, nitrogen bridges, -OH, -NH and/or -NH2 terminations that more readily adsorb ALD reactants. The surface treatments avoid deep penetration of the reactants into the germanium bulk but improve nucleation.

公开(公告)号：EP1629543A1

公开(公告)日：2006-03-01

申请号：EP04785558.0

申请日：2004-05-14

申请人： E.I. DUPONT DE NEMOURS AND COMPANY

发明人： CARCIA, Peter, Francis ,  MCLEAN, Robert, Scott

IPC分类号： H01L51/10

CPC分类号： C23C16/403 ,  C23C16/45525 ,  C23C16/45555 ,  G02F1/133345 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31616 ,  H01L23/564 ,  H01L51/0096 ,  H01L51/5253 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y02E10/549 ,  Y10T428/26 ,  H01L2924/00

摘要： Gas permeation barriers can be deposited on plastic or glass substrates by atomic layer deposition (ALD). The use of the ALD coatings can reduce permeation by many orders of magnitude at thicknesses of tens of nanometers with low concentrations of coating defects. These thin coatings preserve the flexibility and transparency of the plastic substrate. Such articles are useful in container, electrical and electronic applications.

公开(公告)号：EP1597408A2

公开(公告)日：2005-11-23

申请号：EP04715009.9

申请日：2004-02-26

申请人： Narasimhan, Mukundan ,  Demaray, Richard Ernest ,  Brooks, Peter

发明人： Narasimhan, Mukundan ,  Demaray, Richard Ernest ,  Brooks, Peter

IPC分类号： C23C14/34

CPC分类号： C23C14/345 ,  C23C14/35 ,  H01L21/02145 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02304 ,  H01L21/31604 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31691 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/5265 ,  Y10S438/958

摘要： In accordance with the present invention, a dielectric barrier layer is presented. A barrier layer according to the present invention includes a densified amorphous dielectric layer deposited on a substrate by pulsed-DC, substrate biased physical vapor deposition, wherein the densified amorphous dielectric layer is a barrier layer. A method of forming a barrier layer according to the present inventions includes providing a substrate and depositing a highly densified, amorphous, dielectric material over the substrate in a pulsed-dc, biased, wide target physical vapor deposition process. Further, the process can include performing a soft-metal breath treatment on the substrate. Such barrier layers can be utilized as electrical layers, optical layers, immunological layers, or tribological layers.

公开(公告)号：EP1525613A1

公开(公告)日：2005-04-27

申请号：EP03787667.9

申请日：2003-07-15

申请人： Infineon Technologies AG

发明人： JAKSCHIK, Stefan ,  HECHT, Thomas ,  SCHRÖDER, Uwe ,  GOLDBACH, Matthias

IPC分类号： H01L21/8242 ,  H01L21/225 ,  H01L21/033

CPC分类号： H01L27/1087 ,  H01L21/31111 ,  H01L21/3141 ,  H01L21/31616 ,  H01L29/66181

摘要： The invention relates to a method for modifying a semiconductor section by section. For doping purposes, the sections that for example are to remain undoped, are masked by a metal oxide, e.g. aluminium oxide (6). The semiconductor is subsequently doped, e.g. from a gas phase, in those sections (7) that have not been covered by the aluminium oxide. The aluminium oxide is then selectively removed, for example using hot phosphoric acid, thus leaving sections of the semiconductor surface consisting of silicon, silicon oxide or silicon nitride on the wafer.

公开(公告)号：EP1511070A2

公开(公告)日：2005-03-02

申请号：EP04104015.5

申请日：2004-08-20

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Hong, Qi-Zhong

IPC分类号： H01L21/02

CPC分类号： H01L23/5223 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31616 ,  H01L21/31645 ,  H01L21/3185 ,  H01L28/55 ,  H01L28/75 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit capacitor is formed by first forming a first dielectric layer (25) over a semiconductor (10). A copper structure (35) is formed in the first dielectric layer (25) and a second dielectric layer (80) is formed over the copper structure (35). A metal containing layer (90) is formed over the second dielectric layer (80) and the copper structure (35) and a planar surface is formed by removing portions of the metal containing layer (90) and the second dielectric layer (80). The second dielectric layer (80) can comprise a high-k dielectric material. The metal containing layer can comprise two metal layers.

摘要翻译： 通过首先在半导体（10）上形成第一介电层（25）来形成集成电路电容器。 在第一电介质层（25）中形成铜结构（35），在铜结构（35）上形成第二电介质层（80）。 通过除去金属含有层（90）和第二介电层（80）的部分，在第二电介质层（80）上形成金属含有层（90），铜结构（35）形成平坦表面。 第二电介质层（80）可以包括高k电介质材料。 含金属层可以包含两个金属层。

公开(公告)号：EP1506578A2

公开(公告)日：2005-02-16

申请号：EP03755118.1

申请日：2003-05-23

申请人： Schott AG

发明人： LEIB, Jürgen ,  MUND, Dietrich

IPC分类号： H01L23/498

CPC分类号： H01L21/02263 ,  C03B19/00 ,  C03C3/083 ,  C03C3/089 ,  C03C4/12 ,  C03C14/006 ,  C03C15/00 ,  C03C17/02 ,  C03C17/34 ,  C03C2214/16 ,  C03C2217/21 ,  C03C2218/15 ,  C03C2218/32 ,  C03C2218/328 ,  C03C2218/33 ,  C03C2218/355 ,  C23C14/10 ,  H01L21/02129 ,  H01L21/02161 ,  H01L21/31616 ,  H01L21/31625 ,  H01L21/50 ,  H01L21/56 ,  H01L23/10 ,  H01L23/291 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49894 ,  H01L23/66 ,  H01L24/97 ,  H01L51/5203 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/5262 ,  H01L2223/6627 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/1903 ,  H01L2924/19033 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/351 ,  H01P3/003 ,  H01P11/003 ,  H05K3/28 ,  H05K3/467 ,  H05K2201/0179 ,  Y02P40/57 ,  Y10T428/24917 ,  H01L2924/00

摘要： The aim of the invention is to improve the high-frequency characteristics of high-frequency substrates or high-frequency conductor assemblies. To achieve this, the invention provides a glass material for producing insulation layers for high-frequency conductor assemblies. Said material is applied as a layer, in particular with a layer thickness ranging between 0.05 νm and 5 mm, with a tangent of loss angle tanδ in at least one frequency range above 1 GHz of less than or equal to 70*10-4.

摘要翻译： 提供了一种用于制造绝缘层的玻璃材料。 玻璃材料可以改善射频基板或射频导体布置的射频特性。 在一个实施例中，用于制造用于射频基板或射频导体布置的绝缘层的玻璃材料是层厚度在0.05μm和5“之间的层的施加层，并且具有小于 或至少在1GHz以上的频率范围内等于70×10-4。

公开(公告)号：EP1495501A2

公开(公告)日：2005-01-12

申请号：EP03727306.7

申请日：2003-04-15

申请人： Schott AG

发明人： OTTERMANN, Clemens ,  FRITZ, Oliver ,  MUND, Dietrich ,  POMMEREHNE, Jörn

IPC分类号： H01L51/20

CPC分类号： C03B19/00 ,  B81C1/00269 ,  B81C2203/019 ,  B81C2203/031 ,  C03C4/12 ,  C03C14/006 ,  C03C15/00 ,  C03C17/02 ,  C03C17/34 ,  C03C2214/16 ,  C03C2217/21 ,  C03C2218/15 ,  C03C2218/32 ,  C03C2218/328 ,  C03C2218/33 ,  C03C2218/355 ,  C23C14/10 ,  H01L21/02129 ,  H01L21/02145 ,  H01L21/02161 ,  H01L21/02266 ,  H01L21/31616 ,  H01L21/31625 ,  H01L21/50 ,  H01L21/56 ,  H01L23/10 ,  H01L23/291 ,  H01L23/3114 ,  H01L23/49894 ,  H01L51/5203 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/5262 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K3/28 ,  Y02P40/57

摘要： The invention relates to a hermetic encapsulation of organic electro-optical elements. The aim of the invention is to improve the service life of the aforementioned organic, opto-electronic elements. The invention provides a method for producing said elements which comprises the steps of: providing a support (3), applying a first conductive layer (13), applying at least one layer (15) that comprises at least one organic, electro-optical material, applying a second conductive layer (17), and depositing at least one layer (7, 71, 72,..., 7N) having a glass-like structure.

摘要翻译： 在基板（3）上形成导电层（13）。 在设置在导电层（13）上的有机电光材料层（15）之上形成另一导电层（17）。 包括导电层（13,17）和有机电光材料层的层结构（5）被玻璃质结构层覆盖。 还包括以下独立权利要求：（1）有机电光元件; 和（2）有机电光元件的制造装置。