公开(公告)号：EP3486940A1

公开(公告)日：2019-05-22

申请号：EP17827672.1

申请日：2017-07-12

申请人： National University Corporation Tokyo University of Agriculture and Technology ,  National Institute of Information and Communications Technology

发明人： SUDA, Yoshiyuki ,  TSUKAMOTO, Takahiro ,  MOTOHASHI, Akira ,  DEGURA, Kyohei ,  OKUBO, Katsumi ,  YAGI, Takuma ,  KASAMATSU, Akifumi ,  HIROSE, Nobumitsu ,  MATSUI, Toshiaki

IPC分类号： H01L21/203 ,  C23C14/06 ,  C23C14/34 ,  H01L21/329 ,  H01L21/331 ,  H01L21/336 ,  H01L21/338 ,  H01L29/161 ,  H01L29/737 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812 ,  H01L29/88

摘要： A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500 °C, and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600 °C, and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t≤0.881×x -4.79 , where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.