Fabrication method of solid electrolytic capacitor
    2.
    发明公开
    Fabrication method of solid electrolytic capacitor 审中-公开
    固体电解电容器的制造方法

    公开(公告)号:EP1117110A3

    公开(公告)日:2006-04-19

    申请号:EP01100679.8

    申请日:2001-01-11

    IPC分类号: H01G9/04 H01G9/07

    CPC分类号: H01G9/0032 Y10T29/417

    摘要: A shaped member 1 having a predetermined configuration is formed by shaping powder of a valve metal under pressure (FIG. 1A), a sintered body 3 is formed by sintering the shaped member (FIG. 1B) and a pre-anodic oxidation film 9 is preliminarily formed on a surface of the sintered body 3 by electrochemical method (FIG. 1C) before a dielectric film 4 having a predetermined thickness is formed on the sintered body by anodic oxidation (FIG. 1D). The pre-anodic oxidation film 9 is formed by anodic oxidation or barrel chemical conversion to have a thickness larger than a thickness of an oxide film formed by natural oxidation (1 to 5 nm in a case of tantalum) and smaller than an oxide film 4.

    摘要翻译: 通过在压力下对阀金属的粉末进行成形而形成具有预定构造的成形构件1(图1A),通过烧结成形构件形成烧结体3(图1B),并且预阳极氧化膜9为 在通过阳极氧化在烧结体上形成具有预定厚度的介电膜4(图1D)之前,通过电化学方法(图1C)预先形成在烧结体3的表面上。 预阳极氧化膜9通过阳极氧化或桶形化学转化而形成,以具有比由自然氧化形成的氧化膜的厚度(在钽的情况下为1至5nm)并且小于氧化膜4的厚度 。

    Chip capacitor, a fabrication method for the same, and a metal mold
    3.
    发明公开
    Chip capacitor, a fabrication method for the same, and a metal mold 有权
    Chipkondensator,Dessen Herstellungsverfahren und Metallform

    公开(公告)号:EP1143465A3

    公开(公告)日:2006-09-20

    申请号:EP01108617.0

    申请日:2001-04-05

    IPC分类号: H01G9/012 H01G9/00

    CPC分类号: H01G9/012 H01G2/065

    摘要: The present invention provides a chip capacitor, a fabrication method for the same, and a metal mold that can prevent the occurrence of the chip standing phenomenon even when carrying out soldering using reflow soldering, and that be applied to further down-sizing an decreasing of weight. Curved parts 26 and 36 that extend beyond the connecting tongue pieces 21 and 31 of side piece parts 22 and 23 rising in an upward diagonal direction with respect to the connecting tongue pieces 21 and 31 are formed by press bending processing, and thereby the side piece parts 22 and 32 are exposed in an upward rising direction relative to the connecting tongue pieces 21 and 31 at the external end surfaces 15b and 15c of the external resin packaging.

    摘要翻译: 本发明提供了一种片状电容器及其制造方法,以及即使在使用回流焊接进行焊接的情况下也能够防止芯片立起现象的发生的金属模具,并且适用于进一步减小尺寸 重量。 通过压弯加工形成延伸超过相对于连接舌片21和31向上对角线方向上升的侧片部件22和23的连接舌片21和31的弯曲部分26和36, 部件22和32在外部树脂封装的外端面15b和15c处相对于连接舌片21和31向上升的方向露出。