公开(公告)号：EP1855312A1

公开(公告)日：2007-11-14

申请号：EP05710517.3

申请日：2005-02-22

申请人： Neomax Co., LTD

发明人： HIROOKA, Taisuke

IPC分类号： H01L21/3065

CPC分类号： H01L21/0475 ,  C30B29/36 ,  C30B33/12 ,  Y10S438/931

摘要： A method of manufacturing an SiC single crystal wafer according to the present invention includes the steps of: (a) preparing an SiC single crystal wafer 10 with a mirror-polished surface; (b) oxidizing the surface of the SiC single crystal wafer 10 with plasma, thereby forming an oxide layer 12 on the surface of the SiC single crystal wafer; and (c) removing at least a portion of the oxide layer 12 by a reactive ion etching process. Preferably, the surface of the wafer is planarized by repeatedly performing the steps (b) and (c) a number of times.

摘要翻译： 根据本发明的制造SiC单晶晶片的方法包括以下步骤：（a）制备具有镜面抛光表面的SiC单晶晶片10; （b）用等离子体氧化SiC单晶晶片10的表面，从而在SiC单晶晶片的表面上形成氧化物层12; 和（c）通过反应离子蚀刻工艺除去氧化物层12的至少一部分。 优选地，通过重复执行步骤（b）和（c）多次来平坦化晶片的表面。