公开(公告)号：EP3246433A3

公开(公告)日：2017-12-27

申请号：EP17167854.3

申请日：2017-04-25

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： FUJIKANE, Masaki

IPC分类号： C30B29/40 ,  C30B33/00 ,  C30B33/08 ,  H01L21/02

CPC分类号： C30B29/406 ,  B01D53/261 ,  C30B33/005 ,  C30B33/04 ,  C30B33/08 ,  C30B33/12 ,  E03B3/28 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02664

摘要： A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.

公开(公告)号：EP1565598B1

公开(公告)日：2014-10-15

申请号：EP03772484.6

申请日：2003-11-20

申请人： Element Six Technologies Limited

发明人： GODFRIED, Herman, Philip ,  SCARSBROOK, Geoffrey Alan ,  TWITCHEN, Daniel, James ,  HOUWMAN, Evert, Pieter ,  NELISSEN, Wilhelmus, Gertruda, Maria ,  WHITEHEAD, Andrew, John ,  HALL, Clive, Edward ,  MARTINEAU, Philip Maurice

IPC分类号： C30B25/02 ,  C30B29/04 ,  G02F1/21

CPC分类号： C30B29/04 ,  C01B32/25 ,  C01P2006/60 ,  C01P2006/80 ,  C30B9/00 ,  C30B19/02 ,  C30B25/02 ,  C30B25/165 ,  C30B25/20 ,  C30B25/205 ,  C30B33/02 ,  C30B33/12 ,  G02B1/002 ,  G02B1/02

摘要： A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.

公开(公告)号：EP2778649A1

公开(公告)日：2014-09-17

申请号：EP11875382.1

申请日：2011-11-11

申请人： Kwansei Gakuin Educational Foundation

发明人： KANEKO, Tadaaki ,  USHIO, Shoji

IPC分类号： G01N1/00 ,  B82Y35/00 ,  B82Y40/00 ,  G01B11/24 ,  G01N1/28 ,  G01Q40/02 ,  C30B33/12

CPC分类号： G01Q40/02 ,  C30B23/02 ,  C30B25/02 ,  C30B29/36 ,  C30B33/12 ,  H01L21/02378 ,  H01L21/02529 ,  H01L29/1608

摘要： A standard sample (72) that is a nanometer standard prototype has a standard length that serves as a length reference. The standard sample (72) includes a SiC layer in which a step-terrace structure is formed. The height of a step is equal to the height of a full unit that corresponds to one periodic of a stack of SiC molecules in a stack direction or equal to the height of a half unit that corresponds to one-half periodic of the stack of SiC molecules in the stack direction. The height of the step is used as the standard length. In a microscope such as an STM that is to be measured in a high-temperature vacuum environment, performing heating in a vacuum furnace provided in the STM enables a surface reconstruction to occur while removing a natural oxide film from the surface. The surface reconstruction has an ordered atomic arrangement. Therefore, the accuracy of the height of the step is not degraded. Accordingly, a standard sample usable under a high-temperature vacuum is achieved.

公开(公告)号：EP2380232A4

公开(公告)日：2013-03-27

申请号：EP09835859

申请日：2009-12-23

申请人： ENCITE LLC

发明人： MARSH STEPHEN A ,  PARKER DONALD M ,  GRANDE WILLIAM J

IPC分类号： H01M8/06 ,  B01J13/00 ,  C01B3/00 ,  F17C5/00 ,  H01M8/04

CPC分类号： H01M8/04208 ,  B01J13/02 ,  B01J13/04 ,  C30B29/06 ,  C30B33/12 ,  F17C1/00 ,  F17C2201/0166 ,  F17C2221/011 ,  F17C2221/012 ,  F17C2223/0123 ,  F17C2223/036 ,  F17C2270/0131 ,  F17C2270/0168 ,  F17C2270/0184 ,  F17C2270/0763 ,  H01M8/04201 ,  H01M8/04216 ,  H01M8/04753 ,  H01M8/04992 ,  Y02E60/321 ,  Y02E60/324 ,  Y02E60/50

公开(公告)号：EP1950800A3

公开(公告)日：2010-05-05

申请号：EP08000883.2

申请日：2008-01-17

申请人： Sumitomo Electric Industries, Ltd.

发明人： Hachigo, Akihiro ,  Matsumoto, Naoki ,  Nishiura, Takayuki

IPC分类号： H01L21/02 ,  H01L21/306 ,  C30B29/40 ,  C30B33/12

CPC分类号： H01L21/02052 ,  C30B29/40 ,  C30B33/12 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/30621

摘要： Affords a III-V compound semiconductor substrate manufacturing method that enables enhancement of the substrate PL intensity. In such a III-V compound semiconductor substrate manufacturing method, first, the surface 3a of a wafer 3 is polished (polishing step). Second, the surface 3a of the wafer 3 is cleaned (first cleaning step S 7). Next, the surface 3a of the wafer 3 is subjected to first dry-etching, employing a halogen-containing gas, while first bias voltage is applied to a chuck 24 for carrying the wafer 3. Subsequently, the surface 3a of the wafer 3 is subjected to second dry-etching, employing the halogen-containing gas (second dry-etching step Sll), while second bias power lower than the first bias power is applied to the chuck 24.

公开(公告)号：EP1603154A2

公开(公告)日：2005-12-07

申请号：EP05019274.9

申请日：2000-09-18

申请人： APPLIED MATERIALS, INC.

发明人： Thilderkvist, AnnaLena ,  Comita, Paul B. ,  Scudder, Lance A. ,  Riley, Norma B.

IPC分类号： H01L21/205 ,  C23C16/02 ,  H01L21/762

CPC分类号： H01L21/02046 ,  C23C16/0236 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67115 ,  H01L21/67155 ,  H01L21/76254 ,  Y10S438/964 ,  Y10S438/977

摘要： A method for treating a surface of a substrate, said method comprising:

providing a chamber with central and outside gas inlet zones, wherein the gas flow rate in each gas inlet zone is independently controllable;
providing a substrate within said chamber, said substrate comprising a cleaved surface, said cleaved surface being characterized by a predetermined surface roughness value and having a distribution of hydrogen bearing particles defined from said cleaved surface to a region underlying said cleaved surface;
increasing a temperature of said cleaved surface to greater than about 1000°C while introducing a hydrogen bearing etchant gas into said chamber through said gas inlet zones; and
exposing said cleaved surface to said hydrogen bearing etchant gas, thereby reducing said predetermined surface roughness value by about fifty percent and greater.

摘要翻译： 一种处理衬底表面的方法，所述方法包括：向腔室提供中心和外部气体入口区域，其中每个气体入口区域中的气体流量是独立可控的; 在所述室内提供衬底，所述衬底包括切割表面，所述切割表面的特征在于预定的表面粗糙度值，并且具有从所述切割表面限定到所述切割表面下方区域的含氢颗粒的分布; 将所述裂解表面的温度增加到大于约1000℃，同时通过所述气体入口区将氢气蚀刻剂气体引入所述腔室; 并将所述切割的表面暴露于所述含氢蚀刻剂气体，从而将所述预定表面粗糙度值降低大约百分之五十以上。

公开(公告)号：EP1085562A2

公开(公告)日：2001-03-21

申请号：EP00308116.3

申请日：2000-09-18

申请人： Applied Materials, Inc.

发明人： Thilderkvist, AnnaLena ,  Comita, Paul B. ,  Scudder, Lance A. ,  Riley, Norma B.

IPC分类号： H01L21/3105

CPC分类号： H01L21/02046 ,  C23C16/0236 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67115 ,  H01L21/67155 ,  H01L21/76254 ,  Y10S438/964 ,  Y10S438/977

摘要： A method of smoothing a silicon surface formed on a substrate. According to the present invention a substrate having a silicon surface is placed into a chamber and heated to a temperature of between 1000° - 1300°C. While the substrate is heated to a temperature between 1000° - 1300°C, the silicon surface is exposed to a gas mix comprising H 2 and HCl in the chamber to smooth the silicon surface.

摘要翻译： 一种平滑形成在基底上的硅表面的方法。 根据本发明，将具有硅表面的基板放置在室内并加热到1000-1300℃的温度。将基板加热到1000-1300℃之间的温度下，硅表面是 在室内暴露于包含H 2和HCl的气体混合物以使硅表面平滑。

公开(公告)号：EP4403677A3

公开(公告)日：2024-08-21

申请号：EP24162314.9

申请日：2020-08-05

申请人： Kwansei Gakuin Educational Foundation ,  Toyota Tsusho Corporation

发明人： KANEKO, Tadaaki ,  KOJIMA, Kiyoshi

IPC分类号： C30B29/36 ,  C30B23/06 ,  C30B33/12 ,  H01L21/203 ,  C30B23/02 ,  C30B25/18 ,  C30B33/02 ,  H01L21/02

CPC分类号： C30B29/36 ,  H01L21/02529 ,  H01L21/02658 ,  H01L21/02378 ,  H01L21/02631 ,  H01L21/02019 ,  C30B33/02 ,  C30B33/12 ,  C30B23/025 ,  C30B23/063 ,  C30B25/186

摘要： An object of the present invention is to provide a novel technology capable of achieving high-quality SiC seed crystal, SiC ingot, SiC wafer and SiC wafer with an epitaxial film. The present invention, which solves the above object, is a method for producing a SiC seed crystal for growth of a SiC ingot, the method including a heat treatment step of heat-treating a SiC single crystal in an atmosphere containing Si element and C element. As described above, by heat-treating the SiC single crystal in an atmosphere containing the Si element and the C element, it is possible to produce a high-quality SiC seed crystal in which strain and crystal defects are suppressed.

公开(公告)号：EP3128047B1

公开(公告)日：2018-09-26

申请号：EP15773120.9

申请日：2015-03-10

申请人： Toyo Tanso Co., Ltd.

发明人： YABUKI, Norihito ,  TORIMI, Satoshi ,  NOGAMI, Satoru

IPC分类号： H01L21/3065 ,  H01L21/302 ,  H01L21/324 ,  H01L21/205 ,  H01L21/67 ,  C30B19/04 ,  C30B19/12 ,  C30B29/36 ,  C30B33/12 ,  H01L21/02 ,  H01L29/16

CPC分类号： C30B19/12 ,  C30B19/04 ,  C30B29/36 ,  C30B33/12 ,  H01L21/02019 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02658 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3247 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67115 ,  H01L29/1608

摘要： Provided is a method in which the rate of growth is not lowered even when a cut SiC seed crystal is used in performing MSE process. A SiC seed crystal that is used as a seed crystal in metastable solvent epitaxy process (MSE process) is heated under Si atmosphere and the surface of the SiC seed crystal is etched to remove a work-affected layer that was formed by cutting. Work-affected layers generated on SiC seed crystals are known to inhibit growth during MSE process, and therefore removing the work-affected layers can prevent lowering of the rate of growth.

公开(公告)号：EP3222759A4

公开(公告)日：2018-05-30

申请号：EP15861692

申请日：2015-11-17

申请人： KWANSEI GAKUIN EDUCATIONAL FOUND ,  TOYO TANSO CO

发明人： KANEKO TADAAKI ,  ASHIDA KOJI ,  KUTSUMA YASUNORI ,  TORIMI SATOSHI ,  SHINOHARA MASATO ,  TERAMOTO YOUJI ,  YABUKI NORIHITO ,  NOGAMI SATORU

IPC分类号： C30B33/12 ,  C30B29/36 ,  H01L21/302

CPC分类号： H01L21/30621 ,  C30B29/36 ,  C30B33/12 ,  H01L21/0445 ,  H01L21/302 ,  H01L21/304

摘要： Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.