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1.发明公开QUANTITATIVE EVALUATION DEVICE AND METHOD OF ATOM VACANCY EXISTING IN SILICON WAFER 有权定量评价的设备和方法在硅晶片中的原子GAP
公开(公告)号：EP1992942A1
公开(公告)日：2008-11-19
申请号：EP07738100.2
申请日：2007-03-02
CPC分类号： G01N29/07 , G01N29/041 , G01N29/2437 , G01N29/343 , G01N2291/02881 , G01N2291/2698
摘要： There is provided a quantitative evaluation device or the like of atomic vacancy existing in a silicon wafer in which the atomic vacancy concentration in the silicon wafer can be quantitatively evaluated by forming a rationalized thin-film transducer on a surface of a silicon sample without conducting an acceleration treatment for enhancing the concentration. This is characterized by comprising a magnetic force generating means 2 for applying an external magnetic field to a silicon sample 5 cut out from a given site of a silicon wafer, a temperature controlling means 3 capable of cooling the silicon sample 5 to a temperature region of not higher than 50 K, a ultrasonic oscillating-detecting means 4 for oscillating ultrasonic pulse to the surface of the silicon sample 5 and propagating the oscillated ultrasonic pulse into the silicon sample 5 and detecting a change of sound velocity in the propagated ultrasonic pulse, wherein a thin-film transducer 8 having properties capable of following to an expansion of the silicon sample 5 at the above temperature region and substantially aligning C-axis in a given direction is directly formed on the surface of the silicon sample 5.
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2.发明授权QUANTITATIVE EVALUATION DEVICE AND METHOD OF ATOM VACANCY EXISTING IN SILICON WAFER 有权硅晶片存在原子空位的定量评估装置和方法
公开(公告)号：EP1992942B1
公开(公告)日：2017-12-13
申请号：EP07738100.2
申请日：2007-03-02
CPC分类号： G01N29/07 , G01N29/041 , G01N29/2437 , G01N29/343 , G01N2291/02881 , G01N2291/2698
摘要： There is provided a quantitative evaluation device or the like of atomic vacancy existing in a silicon wafer in which the atomic vacancy concentration in the silicon wafer can be quantitatively evaluated by forming a rationalized thin-film transducer on a surface of a silicon sample without conducting an acceleration treatment for enhancing the concentration. This is characterized by comprising a magnetic force generating means 2 for applying an external magnetic field to a silicon sample 5 cut out from a given site of a silicon wafer, a temperature controlling means 3 capable of cooling the silicon sample 5 to a temperature region of not higher than 50 K, a ultrasonic oscillating-detecting means 4 for oscillating ultrasonic pulse to the surface of the silicon sample 5 and propagating the oscillated ultrasonic pulse into the silicon sample 5 and detecting a change of sound velocity in the propagated ultrasonic pulse, wherein a thin-film transducer 8 having properties capable of following to an expansion of the silicon sample 5 at the above temperature region and substantially aligning C-axis in a given direction is directly formed on the surface of the silicon sample 5.
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