公开(公告)号：EP2554711A1

公开(公告)日：2013-02-06

申请号：EP12190073.2

申请日：2008-07-18

申请人： Nippon Mining & Metals Co., Ltd.

发明人： Yabe, Atsushi ,  Ito, Junichi ,  Hisumi, Yoshiyuki ,  Sekiguchi, Junnosuke ,  Imori, Toru

IPC分类号： C23C18/18 ,  C23C14/34 ,  C23C18/32 ,  C23C18/44 ,  C23C28/02 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76843 ,  C23C14/165 ,  C23C14/584 ,  C23C18/1879 ,  C23C18/31 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10T428/12493 ,  Y10T428/12507 ,  Y10T428/12514 ,  Y10T428/24917 ,  H01L2924/00

摘要： The present invention provides a plated article that has a thin seed layer having uniform thickness, formed by electroless plating and allowing formation of ultrafine wiring, and that avoids the complicated formation of a bilayer of a barrier layer and a catalytic metal layer prior to forming the seed layer. The present invention also provides a method for manufacturing the plated article. The plated article has an alloy thin film formed on a substrate and having a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5at% to 40at% of the metal (A). The metal thin film formed by electroless displacement and reduction plating is a metal thin film having a thickness no greater than 10 nm and a resistivity no greater than 10 µΩ·cm. Preferably, the metal (B) has a barrier function with respect to a metal of the metal thin film.

摘要翻译： 本发明提供的镀敷物确实具有均匀的厚度，通过无电解电镀及允许形成超微细配线的形成的薄籽晶层，并做避免了阻挡层的双层和之前形成催化金属层的复杂形成 籽晶层。 本发明因此提供了用于制造镀敷制品的方法。 所述镀敷物具有合金薄膜上形成的基片和具有用于化学镀具有催化活性的金属（A）和金属（B）能够经历位移与包含在无电解电镀液中的金属离子镀，和金属薄 形成在合金薄膜通过无电解置换和还原镀电影。 具有催化活性的金属（A）和金属（B）能够置换镀敷的所述的合金薄膜的组成原子％含有5至金属（A）的40原子％。 的金属薄膜通过无电解置换和还原镀而形成为具有的厚度不大于10nm，电阻大于10μ©·cm的更大的金属薄膜。 优选地，所述金属（B）具有相对于所述金属薄膜的金属的阻挡功能。