公开(公告)号：EP2949785A1

公开(公告)日：2015-12-02

申请号：EP15169683.8

申请日：2015-05-28

申请人： Applied Materials, Inc.

发明人： Shaviv, Roey ,  Emesh, Ismail T. ,  Argyris, Dimitrios ,  Aksu, Serdar

IPC分类号： C25D7/12 ,  C25D3/38 ,  H01L21/768 ,  C25D3/02

CPC分类号： C25D7/123 ,  C25D3/02 ,  C25D3/12 ,  C25D3/38 ,  C25D3/46 ,  C25D3/48 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 1 to about 6, and applying a cathodic potential in the range of about -0.5 V to about -4 V. The workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V.

摘要翻译： 在本公开的一个实施例，用于在反应性金属电影在工件上沉积金属的方法雅舞蹈包括电化学沉积使用具有至少一个电镀金属离子的电镀电解液形成在工件上的种子层上的金属化层，一个 的约1至约6，并且至约-4V。工件施加阴极电位在约-0.5V的范围内的pH值范围包括所述种子层和所述工件的电介质表面，所述阻挡层之间设置一个屏障层 包括具有标准电极电位比0伏更负和籽晶层包括具有标准电极电位比0V。更积极的第二金属的第一金属

公开(公告)号：EP0973195B1

公开(公告)日：2012-04-11

申请号：EP99304867.7

申请日：1999-06-22

申请人： STMicroelectronics, Inc.

发明人： Chan, Tsiu C. ,  Chiu, Anthony M. ,  Smith, Gregory C.

IPC分类号： H01L21/768 ,  H01L21/288 ,  H01L23/532

CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53242 ,  H01L23/53252 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1849187A2

公开(公告)日：2007-10-31

申请号：EP06717977.0

申请日：2006-01-10

申请人： International Business Machines Corporation

发明人： FURUKAWA, Toshiharu ,  HAKEY, Mark, C. ,  HOLMES, Steven, J. ,  HORAK, David, V. ,  KOBURGER, Charles, W., III

IPC分类号： H01L23/48

CPC分类号： H01L21/76885 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76852 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76874 ,  H01L23/5283 ,  H01L23/53209 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Conductive sidewall spacer stractures are formed using a method tiiat patterns structures (mandrels) and activates the sidewalls of the structures. Metal ions are attached to the sidewalls of the structures and these metal ions are reduced to form seed material. The structures are then trimmed and the seed material is plated to form wiring on the sidewalls of the structures.

公开(公告)号：EP1744358A1

公开(公告)日：2007-01-17

申请号：EP05256204.8

申请日：2005-10-04

申请人： FUJITSU LIMITED

发明人： Koura, Yumiko, c/o Fujitsu Limited ,  Kitada, Hideki, c/o Fujitsu Limited ,  Ozawa, Kiyoshi, c/o Fujitsu Limited

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53238 ,  H01L21/2885 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： To manufacture a semiconductor device with copper plugs and/or wirings, the following steps are performed.
(a) A copper alloy film (16, 17) containing at least two metallic elements in addition to copper is formed on the surface of an insulator (15) containing oxygen and formed on a semiconductor substrate (1). (b) A metal film (18) made of pure copper or copper alloy is formed on the copper alloy film (16, 17). (c) After step (a) or (b), heat treatment is performed under the condition that a metal oxide film is formed on a surface of the insulator through reaction between the oxygen in the insulator (15) and the metallic elements in the copper alloy film (16, 17).

摘要翻译： 为了制造具有铜插头和/或布线的半导体器件，执行以下步骤。 （a）在包含氧的绝缘体（15）的表面上形成在半导体衬底（1）上形成除铜以外含有至少两种金属元素的铜合金膜（16,17）。 （b）在铜合金膜（16,17）上形成由纯铜或铜合金制成的金属膜（18）。 （c）在步骤（a）或（b）之后，在通过绝缘体（15）中的氧与绝缘体（15）中的金属之间的反应而在绝缘体的表面上形成金属氧化物膜的条件下进行热处理 铜合金膜（16,17）。

公开(公告)号：EP1266054B1

公开(公告)日：2006-12-20

申请号：EP01918295.5

申请日：2001-03-02

申请人： ASM INTERNATIONAL N.V.

发明人： WERKHOVEN, Christiaan, J. ,  RAAIJMAKERS, Ivo ,  HAUKKA, Suvi, P.

IPC分类号： C30B25/14 ,  C23C16/44 ,  H01L21/205

CPC分类号： H01L21/28185 ,  C23C16/029 ,  C23C16/34 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45534 ,  C30B25/14 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/3185 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76879 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10T428/24942 ,  Y10T428/2495 ,  H01L2924/00

摘要： Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles (301) or (450, 455, 460, 470) including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources (306 or 460) are introduced during the cyclical process. A graded gate dielectric (72) is thereby provided, even for extremely thin layers. The gate dielectric (72) as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric (72) can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (432) (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses (460) can gradually increase in frequency, forming a graded transition region (434), until pure copper (436) is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces.

公开(公告)号：EP1190607B1

公开(公告)日：2006-09-27

申请号：EP00928360.7

申请日：2000-04-18

申请人： Infineon Technologies AG

发明人： HOINKIS, Mark, D.

IPC分类号： H05K3/10 ,  H01L21/768

CPC分类号： H01L21/76843 ,  C23C28/322 ,  C23C28/34 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2221/1078 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An improved fill of high aspect ratio trenches by copper is obtained by first sputtering a thin nucleating film of copper deposited by physical vapor deposition, then depositing a thin seed layer of copper by chemical vapor deposition, and then completing the fill by electroplating. Stress migration of the fill is improved if the copper deposition is preceded by the deposition by CVD of a layer of titanium nitride either alone or preceded and/or followed by the deposition of tantalum by an ionized PVD source.

公开(公告)号：EP1459353A2

公开(公告)日：2004-09-22

申请号：EP02784777.1

申请日：2002-12-10

申请人： Applied Materials, Inc.

发明人： DING, Peijun ,  XU, Zheng ,  MOSELY, Roderick, C. ,  RENGARAJAN, Suraj ,  MAITY, Nirmalya ,  CARL, Daniel, A. ,  CHIN, Barry ,  SMITH, Paul, F. ,  ANGELO, Darryl ,  TOLIA, Anish ,  FU, Jianming ,  CHEN, Fusen ,  GOPALRAJA, Praburam ,  TANG, Xianmin ,  FORSTER, John, C.

IPC分类号： H01J37/34 ,  H01J37/32

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

公开(公告)号：EP1267405A2

公开(公告)日：2002-12-18

申请号：EP01130716.2

申请日：2001-12-21

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Kishida, Takenobu ,  Tada, Shinya ,  Ikeda, Atsushi ,  Harada, Takeshi ,  Sugihara, Kohei

IPC分类号： H01L23/532

CPC分类号： H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the β-crystal structure.

公开(公告)号：EP1091016A3

公开(公告)日：2001-06-13

申请号：EP00308846.5

申请日：2000-10-06

申请人： Applied Materials, Inc.

发明人： Chiang, Tony P. ,  Cong, Yu D. ,  Ding, Peijun ,  Fu, Jianming ,  Tang, Howard H. ,  Tolia, Anish

IPC分类号： C23C14/35 ,  C23C14/16 ,  H01L21/768 ,  H01J37/34

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： The disclosure relates to a DC magnetron sputter reactor (50) for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer is disclosed. SIP is promoted by a small magnetron (130) having poles (132, 134) of unequal magnetic strength and a high power applied to the target during sputtering. The target power for a 200mm wafer is preferably at least 10kW; more preferably, at least 18kW; and most preferably, at least 24kW. Hole filling with SIP is improved by long-throw sputtering in which the target-to-substrate spacing (56 to 58) is at least 50% of substrate diameter, more preferably at least 80%, most preferably at least 140%. The SIP copper layer (150) can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes (22), a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole. Preferably, the plasma is ignited in a cool process in which low power is applied to the target in the presence of a higher pressure of argon working gas. After ignition, the pressure is reduced, and target power is ramped up to a relatively high operational level to sputter deposit the film.

摘要翻译： 本发明涉及用于溅射铜的DC磁控管溅射反应器（50），其使用方法以及优选在低于5毫托，优选低于1毫托的压力下促进自离子化等离子体（SIP）溅射的屏蔽和其他部件。 而且，公开了一种使用SIP将铜涂覆到狭窄且深的过孔或沟槽中用于第一铜层的方法。 SIP由小型磁控管（130）提升，该磁控管具有在溅射期间不等磁场强度和高功率施加于靶的磁极（132,134）。 200mm晶圆的目标功率最好至少为10kW; 更优选至少18kW; 最优选至少24kW。 通过长溅射溅射改善了SIP填充孔，其中靶 - 衬底间距（56至58）至少为衬底直径的50％，更优选至少80％，最优选至少140％。 SIP铜层（150）可以充当用传统溅射（PVD）或电化学镀（ECP）填充孔的晶种和成核层。 对于非常高纵横比的孔（22），通过化学气相沉积（CVD）在SIP铜成核层上沉积铜晶种层，并且PVD或ECP完成孔填充。 铜种子层可以通过SIP和高密度等离子体溅射的组合来沉积。 对于非常狭窄的孔，CVD铜层可以填充孔。 优选地，等离子体在冷却过程中点燃，其中在存在较高压力的氩气工作气体的情况下向目标施加低功率。 点火后，压力降低，目标功率升高到相对较高的操作水平，以溅射沉积薄膜。

公开(公告)号：EP1091016A2

公开(公告)日：2001-04-11

申请号：EP00308846.5

申请日：2000-10-06

申请人： Applied Materials, Inc.

发明人： Chiang, Tony P. ,  Cong, Yu D. ,  Ding, Peijun ,  Fu, Jianming ,  Tang, Howard H. ,  Tolia, Anish

IPC分类号： C23C14/35 ,  C23C14/16 ,  H01L21/768 ,  H01J37/34

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： The disclosure relates to a DC magnetron sputter reactor (50) for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. Also, a method of coating copper into a narrow and deep via or trench using SIP for a first copper layer is disclosed. SIP is promoted by a small magnetron (130) having poles (132, 134) of unequal magnetic strength and a high power applied to the target during sputtering. The target power for a 200mm wafer is preferably at least 10kW; more preferably, at least 18kW; and most preferably, at least 24kW. Hole filling with SIP is improved by long-throw sputtering in which the target-to-substrate spacing (56 to 58) is at least 50% of substrate diameter, more preferably at least 80%, most preferably at least 140%. The SIP copper layer (150) can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). For very high aspect-ratio holes (22), a copper seed layer is deposited by chemical vapor deposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes the hole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole. Preferably, the plasma is ignited in a cool process in which low power is applied to the target in the presence of a higher pressure of argon working gas. After ignition, the pressure is reduced, and target power is ramped up to a relatively high operational level to sputter deposit the film.

摘要翻译： 本公开涉及用于溅射铜的DC磁控溅射反应器（50），其使用方法，以及屏蔽和促进自离子等离子体（SIP）溅射的其它部件，优选在低于5毫托，优选低于1毫托的压力下。 另外，公开了一种使用SIP将第一铜层涂覆在窄的和深的通孔或沟槽中的方法。 SIP由具有不同磁场强度的磁极（132,134）的小磁控管（130）促进，并且在溅射期间施加到靶材上的高功率。 200mm晶片的目标功率优选至少为10kW; 更优选至少18kW; 最优选至少24kW。 通过长投射溅射改善了填充SIP的孔，其中目标 - 衬底间距（56至58）至少为衬底直径的50％，更优选至少80％，最优选至少140％。 SIP铜层（150）可以用作用于常规溅射（PVD）或电化学电镀（ECP）的孔填充的种子和成核层。 对于非常高的纵横比孔（22），通过化学气相沉积（CVD）在SIP铜成核层上沉积铜籽晶层，并且PVD或ECP完成孔填充。 可以通过SIP和高密度等离子体溅射的组合来沉积铜籽晶层。 对于非常窄的孔，CVD铜层可以填充孔。 优选地，在存在较高压力的氩气工作气体的情况下，将低功率施加​​于靶材的冷却过程中等离子体点燃。 点火后，压力降低，目标功率上升到较高的操作水平，以溅射沉积薄膜。