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    SEMICONDUCTOR LASER DEVICE
    2.
    发明公开
    SEMICONDUCTOR LASER DEVICE 审中-公开

    公开(公告)号：EP3358684A1

    公开(公告)日：2018-08-08

    申请号：EP16850677.2

    申请日：2016-09-29

    申请人： Nippon Telegraph and Telephone Corporation ,  Tohoku University

    发明人： ISHII, Hiroyuki ,  FUJIWARA, Naoki ,  WATANABE, Kei ,  ITOH, Mikitaka ,  KASAI, Keisuke ,  NAKAZAWA, Masataka

    IPC分类号： H01S5/022 ,  G01N21/01 ,  G02B6/12 ,  G02B6/42 ,  H01S5/026 ,  H01S5/12 ,  H01S5/125 ,  H01S5/50

    摘要： An external cavity type laser has a configuration of narrowing a spectral linewidth in a semiconductor laser up to about 10 kHz, but since multiple components are required and they need to be assembled with high precision, there has been a problem that their control circuits are complicated. A configuration of a DFB laser-based wavelength tunable laser is well known, but long resonators have difficulty in forming uniform resonators due to production variations, thereby inducing limitation in narrowing the spectral linewidth in the DFB laser-based wavelength tunable laser as well. In the semiconductor laser device of the present invention, a semiconductor laser that oscillates in a single mode and a low-loss lightwave circuit using SiO 2 glass are arranged on the common substrate. The lightwave circuit is configured such that part of output light from the semiconductor laser propagates through a certain length of an optical path, and then is reflected by a reflector and is fed back to the semiconductor laser. Output light from the semiconductor laser and an input waveguide of the lightwave circuit can also be configured to be optically connected directly to each other. The present invention can provide a compact laser device with a narrowed spectral linewidth and stable wavelength controllability.