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    SEMICONDUCTOR LASER DEVICE
    2.
    发明公开
    SEMICONDUCTOR LASER DEVICE 审中-公开

    公开(公告)号：EP3358684A1

    公开(公告)日：2018-08-08

    申请号：EP16850677.2

    申请日：2016-09-29

    申请人： Nippon Telegraph and Telephone Corporation ,  Tohoku University

    发明人： ISHII, Hiroyuki ,  FUJIWARA, Naoki ,  WATANABE, Kei ,  ITOH, Mikitaka ,  KASAI, Keisuke ,  NAKAZAWA, Masataka

    IPC分类号： H01S5/022 ,  G01N21/01 ,  G02B6/12 ,  G02B6/42 ,  H01S5/026 ,  H01S5/12 ,  H01S5/125 ,  H01S5/50

    摘要： An external cavity type laser has a configuration of narrowing a spectral linewidth in a semiconductor laser up to about 10 kHz, but since multiple components are required and they need to be assembled with high precision, there has been a problem that their control circuits are complicated. A configuration of a DFB laser-based wavelength tunable laser is well known, but long resonators have difficulty in forming uniform resonators due to production variations, thereby inducing limitation in narrowing the spectral linewidth in the DFB laser-based wavelength tunable laser as well. In the semiconductor laser device of the present invention, a semiconductor laser that oscillates in a single mode and a low-loss lightwave circuit using SiO 2 glass are arranged on the common substrate. The lightwave circuit is configured such that part of output light from the semiconductor laser propagates through a certain length of an optical path, and then is reflected by a reflector and is fed back to the semiconductor laser. Output light from the semiconductor laser and an input waveguide of the lightwave circuit can also be configured to be optically connected directly to each other. The present invention can provide a compact laser device with a narrowed spectral linewidth and stable wavelength controllability.

    SEMICONDUCTOR INTEGRATED OPTICS ELEMENT AND PRODUCTION METHOD THEREFOR
    4.
    发明公开
    SEMICONDUCTOR INTEGRATED OPTICS ELEMENT AND PRODUCTION METHOD THEREFOR 审中-公开

    公开(公告)号：EP3764488A1

    公开(公告)日：2021-01-13

    申请号：EP19763524.6

    申请日：2019-02-28

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： SHINDO, Takahiko ,  FUJIWARA, Naoki ,  SANO, Kimikazu ,  ISHII, Hiroyuki ,  MATSUZAKI, Hideaki ,  YAMADA, Takashi ,  HORIKOSHI, Kengo

    IPC分类号： H01S5/042 ,  H01S5/026 ,  H01S5/12 ,  H01S5/227 ,  H01S5/50

    摘要： A semiconductor optical integrated element (AXEL) designed to output further intensified light dispenses with an additional inspection process and prevents an increase in manufacturing costs. A method for manufacturing such a semiconductor optical integrated element, includes the step of forming a semiconductor wafer by arranging a plurality of the semiconductor optical integrated elements two-dimensionally such that optical axes of the semiconductor optical integrated elements are aligned. The semiconductor optical integrated elements each include a DFB laser, an EA modulator, and a SOA that are monolithically integrated on an identical substrate and that are disposed in an order of the DFB laser, the EA modulator, and the SOA along a light emitting direction. The method further includes the steps of cleaving the semiconductor wafer along a plane orthogonal to the light emitting direction to form a semiconductor bar including a plurality of the semiconductor optical integrated elements arranged one-dimensionally along a direction orthogonal to the light emitting direction such that the semiconductor optical integrated elements adjacent to each other share an identical cleavage end face as a light emission surface, inspecting each of the semiconductor optical integrated elements of the semiconductor bar by energizing and driving the SOA and the DFB laser through a connection wiring part that electrically connects an electrode of the SOA and an electrode of the DFB laser together, and separating out each of the semiconductor optical integrated elements of the semiconductor bar at a boundary line between the adjacent semiconductor optical integrated elements after the inspection to cut the connection wiring part electrically connecting the electrode of the SOA and the electrode of the DFB laser and electrically isolate the SOA and the DFB laser from each other.