公开(公告)号：EP0164598A3

公开(公告)日：1986-11-20

申请号：EP85105927

申请日：1985-05-14

申请人： Nippon Telegraph and Telephone Public Corporation

发明人： Tanaka, Akinobu ,  Morita, Masao ,  Imamura, Saburo ,  Tamamura, Toshiaki ,  Kogure, Osamu

IPC分类号： G03F07/10

CPC分类号： G03F7/008 ,  G03F7/0125 ,  G03F7/0757 ,  G03F7/094

摘要： The present invention provides a photosensitive resin composition used to form a top resist layer of a multilayer resist system, the composition comprising a photosensitive polyphenylsilsesquioxane represented by the following general formula (I) of:
wherein X is the one selected from the group consisting of acryloyloxymethyl, methacryloyloxymethyl, and cinnamoyloxymethyl; and I, m and n are zero or positive integers but I and m do not take the value of zero simultaneously; and a bisazide compound added to act as a cross-linking agent. The photosensitive resin composition has high sensitivity to UV lights and excellent resistance to reactive ion etching under oxygen gas (O 2 RIE).

公开(公告)号：EP0091651A3

公开(公告)日：1984-10-17

申请号：EP83103348

申请日：1983-04-06

申请人： Nippon Telegraph and Telephone Public Corporation

发明人： Tamamura, Toshiaki ,  Imamura, Saburo ,  Morita, Masao ,  Kogure, Osamu

IPC分类号： G03F07/10 ,  G03F07/26

CPC分类号： G03F7/265 ,  G03F7/0757 ,  G03F7/36 ,  G03F7/38 ,  Y10S438/95

摘要： A method for forming a micropattern, comprises the steps of forming an organic polymeric material layer (2) on a substrate (1), forming a silicone layer (3) on the organic polymeric material layer (2), selectively irradiating a surface of the silicone layer (3) with a high-energy beam (4), exposing the surface of the silicone layer to a radical addition polymerizable monomer gas (5) so as to form a graft polymer film (6) on an irradiated portion of the surface of the silicone layer (3), performing reactive ion etching using the graft polymer film (6) as a mask so as to form a silicone pattern, and performing reactive ion etching using the silicone pattern as a mask so as to form an organic polymeric material pattern. The method allows formation of a resist pattern with a high precision and a high aspect ratio.