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1.发明公开Method of forming resist pattern and resist processing apparatus used in this method 失效形成本方法使用的电阻图案和电阻加工装置的方法
公开(公告)号：EP0185366A3
公开(公告)日：1988-10-19
申请号：EP85116113
申请日：1985-12-17
发明人： Matsuoka, Yasuo , Tsuchiya, Takashi
IPC分类号： G03F07/26
摘要： A method for forming a resist pattern comprises the steps of coating a resist on a substrate (12), baking the resist, selectively radiating electromagnetic waves or particle rays onto a surface of the resist, and developing the resist. The method further comprises, after the baking step and before the developing step, the step of cooling the resist in such a manner that a temperature control plate (8) is disposed parallel to and adjacent to the substrate (12).
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2.发明公开
公开(公告)号：EP0250762A3
公开(公告)日：1988-10-05
申请号：EP87106181
申请日：1987-04-28
IPC分类号： G03F07/26
摘要： In accordance with the present invention, a method is provided for converting a layer of polymeric material which lacks permeability to a more permeable form. The method can also be used to create or enhance patterned differential permeability within a given polymeric film or layer. It has been discovered that compounds/materials can be added to the polymeric material formulation and subsequently be leached from a film or layer cast from the formulation, to provide increased permeability of the layer as a whole, or to create or enhance permeability differentials within the polymeric layer. The additive used to alter permeability can be a photoactive compound or sensitizer such as the type of materials typically used in photoresists (for example, aryl azides, diazoquinones, and diazo homotetraminic acids), or can be a non-photosensitive or a nonphotoactive material. A photoactive material being a material which undergoes chemical change upon exposure to photons, electrons or ions. The additive used to alter permeability can be a compound/material which is leachable from the film in the same form in which it is added to the formulation, or it may be a compound/material which becomes leachable after treatment of the film with heat or radiation. The method of creating enhanced differential permeability in a resist film comprises:
a) adding a compound/material to the polymeric resist formulation, wherein said compound/material or an altered derivative thereof can be subsequently leached from a film prepared using the polymeric resist formulation; b) applying the resist formulation to a substrate to provide a resist film; c) patternwise irradiating the resist film to create a latent image within the resist film, whereby the ability of the leachable material to be leached from the resist film is altered in the patternwise irradiated areas. This method of increasing permeability within a polymeric layer or enhancing the differential in permeability within a latent pattern in a polymeric layer is particularly useful in photolithographic processes used in the fabrication of electronic devices.-
公开(公告)号：EP0249769A3
公开(公告)日：1988-09-28
申请号：EP87107477
申请日：1987-05-22
IPC分类号： G03F07/26
摘要： The patterned image includes on a substrate, a patterned image of a first resist material and patterned image of a second and different resist material on said first resist material. Said first material contains reactive hydrogen functional groups. The surface layer of the delineated and uncovered first resist material is reacted with a multifunctional organometallic material containing functional groups that are reactive with the functional groups of said first material.
The method comprises:
providing a first resist material on a substrate wherein said first material contains reactive hydrogen functional groups; providing a second and different resist material on top of said first resist material; selectively exposing said second resist material and developing said second and different resist material to form a resist mask; exposing said first resist material through the said resist mask and developing said first resist material; and reacting the surface layer of the exposed and uncovered first resist material with said organometallic material.-
公开(公告)号：EP0198280A3
公开(公告)日：1988-07-27
申请号：EP86104055
申请日：1986-03-25
IPC分类号： G03F07/26
CPC分类号： G03F7/265
摘要： A process for the development of photoresist which uses no wet developing step is disclosed. An exposed photoresist layer is initially treated with an organosilicon compound such that silicon atoms bound to the exposed photoresist resulting in different etch resistance in the exposed and unexposed areas. Following such treatment, the photoresist layer is selectively etched to define a mask image in the photoresist layer. Conventional processing steps can be used in conjunction with this novel process to fabricate metallic conductor structures using additive or subtractive processes.
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6.发明公开Process for obtaining smooth and tack-free surfaces on relief printing plates for flexography, obtained by photopolymerization 失效用于通过光聚合获得的柔性印刷平板印刷板上的平滑和无色表面的工艺
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公开(公告)号：EP0233333A3
公开(公告)日：1988-02-24
申请号：EP86116308
申请日：1986-11-25
申请人： USHIO DENKI
发明人： Tanaka, Kazuya , Ueki, Kazuyoshi , Suzuki, Hiroko , Mimura, Yoshiki , Suzuki, Shinji , Sugioka, Shinji
IPC分类号： G03F07/26
CPC分类号： G03F7/2022
摘要： Ultraviolet radiation process applies to manufacture semiconductor devices in order to enhance the thermal stability of the photoresist film of semiconductors wafers. A method, in ultraviolet radiation process, enabling effective treatment of the photoresist employing ultraviolet irradiation by preventing the deformation of the photoresist which is caused by exposing it to high ultraviolet radiation at the beginning of exposure. This method employs ultraviolet irradiation, in which the photoresist is exposed to ultraviolet radiation of low intensity at the beginning of exposure, and then exposed to ultraviolet radiation,the intensity of which increases little by little or in steps.
摘要翻译： 紫外线辐射过程适用于制造半导体器件以提高半导体晶片的光刻胶膜的热稳定性。 一种在紫外辐射过程中的方法，通过防止在曝光开始时暴露于高紫外辐射导致的光致抗蚀剂的变形，能够使用紫外辐射有效地处理光致抗蚀剂。 该方法采用紫外线照射，其中光致抗蚀剂在曝光开始时暴露于低强度的紫外线辐射，然后暴露于紫外辐射，紫外辐射的强度一点一点或逐步增加。
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公开(公告)号：EP0226741A3
公开(公告)日：1987-12-16
申请号：EP86114303
申请日：1986-10-16
发明人： Pampalone, Thomas R.
CPC分类号： G03F7/0048 , G03F7/168
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公开(公告)号：EP0195315A3
公开(公告)日：1987-12-16
申请号：EP86102906
申请日：1986-03-05
发明人： Spak, Mark A.
CPC分类号： G03F7/168
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公开(公告)号：EP0112486A3
公开(公告)日：1987-11-04
申请号：EP83111506
申请日：1983-11-17
发明人： Idstein, Hermann
CPC分类号： G03D15/02 , B65H5/062 , B65H27/00 , B65H2404/1371 , B65H2404/14 , B65H2404/1441 , B65H2511/22 , B65H2511/224 , G03F7/3064
摘要： Die Erfindung betrifft eine Transport- und Abquetsch einrichtung (1) für Druckmaterialien, wie Druckplatten, licht empfindlich beschichtete Papiere. Folien od.dgl. in einem Verarbeitungsgerät. Die Einrichtung umfaßt eine Andruck walze (20) und eine angetriebene Transportwalze (21), an welche die Andruckwalze (20) mit Hilfe von Andruckeinrich tungen (22, 22′) beigestellt wird, um einen sicheren Trans port einer Druckplatte und das Abquetschen von Entwickler flüssigkeit od.dgl. Chemikalien von der Druckplattenober fläche in dem Verarbeitungsgerät zu gewährleisten. Sowohl die Andruck- als auch die Transportwalze ist jeweils von einer Steckachse durchsetzt, die aus einem Innenrohr und in dieses beiderseits eingesetzten Lagerzapfen besteht. Die Steckachsen sind derart gelagert, daß ihre Durchbiegung bei Belastung ohne Einfluß auf die Durchbiegung der Walz rohre der Walzen (20, 21) bleibt, wodurch die Gesamtdurch biegung des Walzenrohrs (5) gering ist. Die Transportwalze (21) durchsetzt Seitenschilde (24, 24′) mit ihren Lagerzap fen, die in innerhalb von Lagerschalen (26, 26′) angeord neten Lagern gelagert sind. Von den Lagerzapfen der An druckwalze (20) abgesetzte Zapfenenden (27, 27′) sind in Führungsleisten (25, 25′) gelagert, die auf der Innenseite von Seitenschilden von Befestigungsschrauben (30, 30′) durchsetzt sind.
摘要翻译： 运输和刮板装置（1）用于在处理单元中印刷诸如印版，光敏涂层纸，胶片等的材料。 该装置包括加压辊（20）和从动输送辊（21），借助于压力施加装置（22,22'）调整加压辊20，以确保可靠的运送 印刷板和从处理单元中的印版的表面刮除显影剂流体或类似的化学品。 压辊和输送辊均通过它们一个脱模心轴，其包括内管和两侧安装在其中的期刊。 脱模轴以这样的方式安装，使得它们在负载下的偏转不影响辊（20,21）的滚动管的偏转，结果导致辊管（5）的整体偏转小。 输送辊（21）穿过其侧壁（24,24'），其轴颈安装在轴承箱（26,26'）内的轴承中。 从加压辊（20）的轴颈偏移的轴颈（27,27'）安装在导杆（25,25'）中，紧固螺栓（30,30'）通过该导杆 盾牌。
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