公开(公告)号：EP1876638A2

公开(公告)日：2008-01-09

申请号：EP07013139.6

申请日：2007-07-04

申请人： Nissan Motor Company, Ltd.

发明人： Hayashi, Tetsuya ,  Hoshi, Masakatsu ,  Shimoida, Yoshio ,  Tanaka, Hideaki ,  Yamagami, Shigeharu

IPC分类号： H01L21/04 ,  H01L21/331 ,  H01L29/267 ,  H01L21/336 ,  H01L29/739 ,  H01L29/78 ,  H01L29/24

CPC分类号： H01L29/7828 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/66068

摘要： A semiconductor substrate (1,2) made of a semiconductor material is prepared, and a hetero semiconductor region (3) is formed on the semiconductor substrate (1,2) to form a heterojunction in an interface between the hetero semiconductor region (3) and the semiconductor substrate (1,2). The hetero semiconductor region (3) is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region (3) includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region (3) with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film (4) adjacent to the heterojunction is formed. A gate electrode (5) is formed on the gate insulating film (4). This makes it possible to manufacture a semiconductor device including the gate insulating film (4) with a lower ON resistance, and with a higher insulating characteristic and reliability.

摘要翻译： 制备由半导体材料制成的半导体衬底（1,2），并且在半导体衬底（1,2）上形成异质半导体区域（3），以在异质半导体区域（3）之间的界面形成异质结， 和半导体衬底（1,2）。 异质半导体区域（3）由具有与半导体材料的带隙不同的带隙的半导体材料制成，并且异质半导体区域（3）的一部分包括膜厚度比膜厚度薄的膜厚控制部 其他部分。 通过以与膜厚控制部的膜厚相等的厚度氧化异质半导体区域（3），形成与异质结相邻的栅极绝缘膜（4）。 栅极电极（5）形成在栅极绝缘膜（4）上。 这使得可以制造包括具有较低导通电阻的栅极绝缘膜（4）并且具有更高绝缘特性和可靠性的半导体器件。

公开(公告)号：EP1667237A2

公开(公告)日：2006-06-07

申请号：EP05026273.2

申请日：2005-12-01

申请人： Nissan Motor Company, Ltd.

发明人： Shimoida, Yoshio ,  Hoshi, Masakatsu ,  Tanaka, Hideaki ,  Hayashi, Tetsuya ,  Shinohara, Toshiro ,  Yamagami, Shigeharu

IPC分类号： H01L29/78 ,  H01L29/739 ,  H01L29/80 ,  H01L29/812

CPC分类号： H01L29/7398 ,  H01L29/0834 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/7391 ,  H01L29/7392 ,  H01L29/7395 ,  H01L29/7397

摘要： An aspect of the present invention provides a semiconductor device that includes, a first semiconductor body of a first conductivity type, a first switching mechanism provided on the first semiconductor body, configured and arranged to switch on/off current flowing through the semiconductor device, and a first reverse-blocking heterojunction diode provided on the semiconductor body, configured and arranged to block current reverse to the current switched on/off by the first switching mechanism.

摘要翻译： 本发明的一个方面提供了一种半导体器件，其包括：第一导电类型的第一半导体本体，设置在第一半导体本体上的第一开关机构，被配置和布置成用于接通流过半导体器件的导通/截止电流;以及 设置在所述半导体主体上的第一反向阻挡异质结二极管，被配置和布置成阻止与所述第一开关机构的电流相反的电流接通/断开。

公开(公告)号：EP1667237B1

公开(公告)日：2012-02-22

申请号：EP05026273.2

申请日：2005-12-01

申请人： Nissan Motor Company, Ltd.

发明人： Shimoida, Yoshio ,  Hoshi, Masakatsu ,  Tanaka, Hideaki ,  Hayashi, Tetsuya ,  Shinohara, Toshiro ,  Yamagami, Shigeharu

IPC分类号： H01L29/78 ,  H01L29/739 ,  H01L29/80 ,  H01L29/812

CPC分类号： H01L29/7398 ,  H01L29/0834 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/7391 ,  H01L29/7392 ,  H01L29/7395 ,  H01L29/7397

公开(公告)号：EP1667237A3

公开(公告)日：2008-05-28

申请号：EP05026273.2

申请日：2005-12-01

申请人： Nissan Motor Company, Ltd.

发明人： Shimoida, Yoshio ,  Hoshi, Masakatsu ,  Tanaka, Hideaki ,  Hayashi, Tetsuya ,  Shinohara, Toshiro ,  Yamagami, Shigeharu

IPC分类号： H01L29/78 ,  H01L29/739 ,  H01L29/80 ,  H01L29/812

CPC分类号： H01L29/7398 ,  H01L29/0834 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/7391 ,  H01L29/7392 ,  H01L29/7395 ,  H01L29/7397

摘要： An aspect of the present invention provides a semiconductor device that includes, a first semiconductor body of a first conductivity type, a first switching mechanism provided on the first semiconductor body, configured and arranged to switch on/off current flowing through the semiconductor device, and a first reverse-blocking heterojunction diode provided on the semiconductor body, configured and arranged to block current reverse to the current switched on/off by the first switching mechanism.

公开(公告)号：EP1876638A3

公开(公告)日：2008-10-22

申请号：EP07013139.6

申请日：2007-07-04

申请人： Nissan Motor Company, Ltd.

发明人： Hayashi, Tetsuya ,  Hoshi, Masakatsu ,  Shimoida, Yoshio ,  Tanaka, Hideaki ,  Yamagami, Shigeharu

IPC分类号： H01L21/04 ,  H01L29/267 ,  H01L29/78 ,  H01L29/24 ,  H01L29/06

CPC分类号： H01L29/7828 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/66068

摘要： A semiconductor substrate (1,2) made of a semiconductor material is prepared, and a hetero semiconductor region (3) is formed on the semiconductor substrate (1,2) to form a heterojunction in an interface between the hetero semiconductor region (3) and the semiconductor substrate (1,2). The hetero semiconductor region (3) is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region (3) includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region (3) with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film (4) adjacent to the heterojunction is formed. A gate electrode (5) is formed on the gate insulating film (4). This makes it possible to manufacture a semiconductor device including the gate insulating film (4) with a lower ON resistance, and with a higher insulating characteristic and reliability.