AN ARRAY APPARATUS AND ASSOCIATED METHODS
    2.
    发明公开
    AN ARRAY APPARATUS AND ASSOCIATED METHODS 审中-公开
    一种阵列装置和相关方法

    公开(公告)号:EP3236653A1

    公开(公告)日:2017-10-25

    申请号:EP16166037.8

    申请日:2016-04-19

    IPC分类号: H04N5/374 H04N5/367

    CPC分类号: H04N5/374 H04N5/367

    摘要: An apparatus comprising an array of field-effect transistors, each field-effect transistor comprising a channel, source and drain electrodes configured to enable a flow of electrical current through the channel, and a gate electrode configured to enable the flow of electrical current to be varied, the gate electrode separated from the channel by a dielectric material configured to inhibit a flow of electrical current between the channel and gate electrode, wherein the gate electrode of each field-effect transistor is connected in parallel to the gate electrodes of the other field-effect transistors in the array, and wherein a respective two-terminal current-limiting component is coupled to each gate electrode such that, in the event that a defect in the dielectric material of a particular field-effect transistor allows a leakage current to flow between the channel and gate electrode of that field-effect transistor, the respective two-terminal current-limiting component limits the magnitude of the leakage current so that the other field-effect transistors in the array are substantially unaffected by the leakage current.

    摘要翻译: 一种装置,包括场效应晶体管阵列,每个场效应晶体管包括沟道,配置成使电流能够流过沟道的源电极和漏电极,以及配置成使电流流动成为 所述栅电极通过介电材料与所述沟道隔开,所述介电材料被配置为抑制所述沟道与栅电极之间的电流流动,其中每个场效应晶体管的栅电极并联连接至所述另一场的栅电极 - 效应晶体管,并且其中相应的双端电流限制组件耦合到每个栅电极,使得在特定场效应晶体管的电介质材料中的缺陷允许泄漏电流流动的情况下 在该场效应晶体管的沟道和栅极之间,相应的两端限流元件限制了该放大倍数 从而使阵列中的其他场效应晶体管基本不受漏电流的影响。

    An apparatus and method for sensing a parameter
    6.
    发明公开
    An apparatus and method for sensing a parameter 审中-公开
    Vorrichtung und Verfahren zur Messung eines参数

    公开(公告)号:EP2980569A1

    公开(公告)日:2016-02-03

    申请号:EP14179588.0

    申请日:2014-08-01

    IPC分类号: G01N27/12

    摘要: An apparatus and method comprising: a plurality of sensor elements wherein the sensor elements are configured to be actuated in response to exposure to a parameter and the apparatus is configured to record when each of the sensor elements are actuated wherein: the plurality of sensor elements comprises at least a first subset of sensor elements and at least a second subset of sensor elements where the first subset of sensor elements are actuated in response to a first level of exposure to a parameter and the second subset of sensor elements are actuated in response to a second level of exposure to a parameter.

    摘要翻译: 一种装置和方法,包括:多个传感器元件,其中所述传感器元件被配置为响应于暴露于参数被致动,并且所述设备被配置为记录何时致动每个所述传感器元件,其中:所述多个传感器元件包括 传感器元件的至少第一子集和传感器元件的至少第二子集,其中传感器元件的第一子集响应于第一暴露于参数而被致动,并且传感器元件的第二子集响应于 第二级曝光参数。