公开(公告)号：EP0790635A2

公开(公告)日：1997-08-20

申请号：EP97200281.0

申请日：1997-02-05

申请人： Novellus Systems, Inc.

发明人： Kilgore, Michael D. ,  van den Hoek, Wilbert G.M. ,  Rau, Christopher J. ,  van Schravendijk, Bart J. ,  Tobin, Jeffrey A. ,  Mountsier, Thomas W. ,  Oswalt, James C.

IPC分类号： H01J37/32

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J37/3244 ,  Y10S156/916

摘要： A plasma-enhanced chemical vapor deposition system (10) includes a number of process gas injection tubes (128) and at least one dedicated clean gas injection tube (130). A plasma is used to periodically clean the interior surfaces of the deposition chamber. The cleaning is made more rapid and effective by introducing the clean gas through the dedicated clean gas injection tube. In this manner the clean gas can be introduced at a relatively high flow rate without detracting from the cleaning of the interior surfaces of the process gas injection tubes. As a separate aspect of this invention, a high-frequency signal is applied to both terminals of the coil (102) during the cleaning process. This produces a plasma, mainly by capacitive coupling, which has a shape and uniformity that are well-suited to cleaning the surfaces of the deposition chamber.

公开(公告)号：EP0790635A3

公开(公告)日：1998-04-15

申请号：EP97200281.0

申请日：1997-02-05

申请人： Novellus Systems, Inc.

发明人： Kilgore, Michael D. ,  van den Hoek, Wilbert G.M. ,  Rau, Christopher J. ,  van Schravendijk, Bart J. ,  Tobin, Jeffrey A. ,  Mountsier, Thomas W. ,  Oswalt, James C.

IPC分类号： H01J37/32

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J37/3244 ,  Y10S156/916

摘要： A plasma-enhanced chemical vapor deposition system (10) includes a number of process gas injection tubes (128) and at least one dedicated clean gas injection tube (130). A plasma is used to periodically clean the interior surfaces of the deposition chamber. The cleaning is made more rapid and effective by introducing the clean gas through the dedicated clean gas injection tube. In this manner the clean gas can be introduced at a relatively high flow rate without detracting from the cleaning of the interior surfaces of the process gas injection tubes. As a separate aspect of this invention, a high-frequency signal is applied to both terminals of the coil (102) during the cleaning process. This produces a plasma, mainly by capacitive coupling, which has a shape and uniformity that are well-suited to cleaning the surfaces of the deposition chamber.

摘要翻译： 等离子体增强化学气相沉积系统（10）包括多个处理气体注射管（128）和至少一个专用清洁气体注入管（130）。 等离子体被用来定期清洗沉积室的内表面。 所述清洁由通过经由专用清洁气体注入管引入清洁气体更迅速和有效。 以这种方式，清洁气体可以以相对高的流速来引入不脱离工艺气体喷射管的内表面的清洁减损。 作为本发明的一个单独方面，高频信号在清洁过程中施加到线圈（102）的两个端子。 这产生了等离子，主要是通过电容耦合，其具有形状和均匀性也都非常适合于清洁沉积室的表面上。

公开(公告)号：EP0790641A1

公开(公告)日：1997-08-20

申请号：EP97200338.8

申请日：1997-02-07

申请人： Novellus Systems, Inc.

发明人： Mountsier, Thomas W. ,  Wing, James

IPC分类号： H01L21/00

CPC分类号： H01L21/67109 ,  H01L21/6831 ,  Y10T279/23

摘要： A wafer cooling device (WCD) for cooling a substrate, such as a wafer, during processing is presented. The substrate is mounted to an WCD heat transfer surface, thereby forming a cavity in between the substrate and the heat transfer surface into which gas is incorporated. An array of protuberances within the cavity provide support for the wafer. Contact heat conduction between the substrate and WCD is reduced by reducing the amount of direct contact between the substrate and WCD. Thus the heat transfer coefficient from the substrate, and hence substrate temperature, is controlled by adjusting the gas pressure in the cavity. In alternative embodiments, gas distribution channels are formed in the WCD heat transfer surface to increase gas pressure uniformity between the wafer and the WCD thus improving temperature uniformity across the substrate.

摘要翻译： 介绍了用于在处理期间冷却诸如晶片的衬底的晶片冷却装置（WCD）。 将基板安装到WCD传热表面，由此在基板和结合有气体的传热表面之间形成空腔。 腔内的一排突起为晶圆提供支撑。 通过减少衬底和WCD之间的直接接触量，减少了衬底和WCD之间的接触热传导。 因此，通过调节腔体中的气体压力来控制来自基板的传热系数以及因此基板温度。 在替代实施例中，在WCD传热表面中形成气体分配通道以增加晶片与WCD之间的气体压力均匀性，从而改善整个衬底上的温度均匀性。