Abstract:
Provided is a semiconductor device connection structure capable of improving adhesion strength without influencing performance of a semiconductor element by a simple method. The semiconductor device connection structure according to the invention includes a silicon substrate having a plate shape and including an external connection electrode on a surface thereof; a support member which is adhered to a rear surface of the silicon substrate and of which adhesion surface has a column shape that is substantially same as that of the silicon substrate, a thickness of the support member being larger than that of the silicon substrate; and a flexible board having an inner lead therein configured to be connected to the external connection electrode. The flexible board is arranged on a side surface of the silicon substrate and is adhered to the support member with an adhesive.
Abstract:
A cable connection structure (1) according to the present invention connects one or a plurality of cables (20) to an electrode provided on a substrate (10). The cable (20) includes a core wire (21) formed of a line-shaped conductive material, a tubular inner insulator (22) which is formed of an insulator and covers an outer circumference of the core wire, a shield (23) which extends along the longitudinal direction of the inner insulator (22) and includes a plurality of conductors for covering an outer circumference of the inner insulator (22) and in which an exposed portion for exposing the inner insulator (22) has been formed, and an outer insulator (24) formed of an insulator for covering an outer circumference of the shield (23). The shield including a region where the exposed portion has been formed, the inner insulator (22), and the core wire (21) are exposed in a stepped manner toward the distal end. The substrate (10) includes a first electrode (11) configured to be electrically connected to the core wire (21) and a second electrode (12) configured to be electrically connected to the shield.