公开(公告)号：EP2559076A1

公开(公告)日：2013-02-20

申请号：EP11714027.7

申请日：2011-04-08

申请人： OSRAM Opto Semiconductors GmbH

发明人： SUNDGREN, Petrus ,  BAUR, Elmar ,  HOHENADLER, Martin ,  HOFMANN, Clemens

IPC分类号： H01L33/14 ,  H01L33/40

CPC分类号： H01L33/14 ,  H01L31/112 ,  H01L33/02 ,  H01L33/30 ,  H01L33/305 ,  H01L33/382 ,  H01L33/40 ,  H01L33/486 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting diode chip comprising a semiconductor layer sequence (5) comprising a phosphide compound semiconductor material is specified, wherein the semiconductor layer sequence (5) contains a p-type semiconductor region (2), an n-type semiconductor region (4) and an active layer (3) arranged between the p-type semiconductor region (2) and the n-type semiconductor region (4) and serving for emitting electromagnetic radiation. The n-type semiconductor region (4) faces a radiation exit area (6) of the light-emitting diode chip, and the p‑type semiconductor region (2) faces a carrier (7) of the light-emitting diode chip. A current spreading layer (1) having a thickness of less than 500 nm is arranged between the carrier (7) and the p‑type semiconductor region (2), said current spreading layer having one or a plurality of p‑doped Al
x Ga
1-x As layers where 0.5

公开(公告)号：EP2559076B1

公开(公告)日：2016-09-21

申请号：EP11714027.7

申请日：2011-04-08

申请人： OSRAM Opto Semiconductors GmbH

发明人： SUNDGREN, Petrus ,  BAUR, Elmar ,  HOHENADLER, Martin ,  HOFMANN, Clemens

IPC分类号： H01L33/14 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/14 ,  H01L31/112 ,  H01L33/02 ,  H01L33/30 ,  H01L33/305 ,  H01L33/382 ,  H01L33/40 ,  H01L33/486 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00