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    QUANTUM DOT SENSOR READOUT
    2.
    发明公开
    QUANTUM DOT SENSOR READOUT 审中-公开
    量子点传感器读数

    公开(公告)号：EP3073728A1

    公开(公告)日：2016-09-28

    申请号：EP15160237.2

    申请日：2015-03-23

    申请人： Nokia Technologies OY

    发明人： Voutilainen, Martti ,  Kallioinen, Sami

    IPC分类号： H04N5/374

    CPC分类号： H04N5/37455 ,  H01L27/142 ,  H01L27/14643 ,  H01L31/035218 ,  H01L31/112 ,  H04N5/335 ,  H04N5/378

    摘要： An apparatus, comprising a quantum dot graphene field effect transistor configured to operate in such a way that photons incident thereon cause electron-hole pairs to be formed; a connector element connected to the back gate of the quantum dot graphene field effect transistor; a switch element configured to function as an output switch in order to provide an output for a current flowing through the quantum dot graphene field effect transistor; wherein the quantum dot graphene field effect transistor is configured to be back gate biased via the connector element connected to the back gate in such a way that the electrons or the holes formed are trapped in an at least one quantum dot and respectively the holes or the electrons migrate to the channel of the quantum dot field effect transistor; and wherein a drain to source voltage connected to the quantum dot graphene field effect transistor causes a current proportional to the charge of the holes or electrons trapped at the quantum dots by the electrons or holes to flow in the channel.

    摘要翻译： 一种装置，包括量子点石墨烯场效应晶体管，所述量子点石墨烯场效应晶体管被配置成以使得入射在其上的光子导致形成电子 - 空穴对的方式进行操作; 连接到量子点石墨烯场效应晶体管的背栅极的连接器元件; 开关元件，配置为用作输出开关，以便为流过量子点石墨烯场效应晶体管的电流提供输出; 其中所述量子点石墨烯场效应晶体管被配置为通过连接到所述背栅的所述连接器元件背栅偏置，使得形成的所述电子或所述空穴被俘获在至少一个量子点和所述孔或所述 电子迁移到量子点场效应晶体管的沟道; 并且其中连接到量子点石墨烯场效应晶体管的漏极到源极电压引起与由电子或空穴在量子点处俘获的空穴或电子的电荷成正比的电流在沟道中流动。

    TRANSPARENT PHOTODETECTOR FOR MOBILE DEVICES
    3.
    发明公开
    TRANSPARENT PHOTODETECTOR FOR MOBILE DEVICES 审中-公开
    透明胶片摄影师FÜRMOBILE VORRICHTUNGEN

    公开(公告)号：EP2981988A1

    公开(公告)日：2016-02-10

    申请号：EP14779144.6

    申请日：2014-03-28

    申请人： Nokia Technologies Oy

    发明人： COLLI, Alan

    IPC分类号： H01L31/101 ,  H01L31/0352 ,  H01L31/112

    CPC分类号： H01L31/035218 ,  H01L31/028 ,  H01L31/1013 ,  H01L31/1016 ,  H01L31/112 ,  H01L31/113 ,  Y02E10/547

    摘要： An apparatus comprises a graphene film (220); a first arrangement of quantum dots (230) of a first type located in contact with the graphene film (220) as a first monolayer; a second arrangement of quantum dots (230) of a second type located in contact with the graphene film (220) as a second monolayer; an input voltage source (V
    dd ) connected to an end of the graphene film (220); and an output voltage probe (260) connected to the graphene film (220) between the first arrangement of quantum dots (230) and the second arrangement of quantum dots (230).

    摘要翻译： 一种装置包括石墨烯膜; 位于与作为第一单层的石墨烯膜接触的第一类型的量子点的第一布置; 位于与作为第二单层的石墨烯膜接触的第二类型的量子点的第二布置; 连接到所述石墨烯膜的端部的输入电压源; 以及连接到量子点的第一布置和量子点的第二布置之间的石墨烯膜的输出电压探针。

    PHOTODETECTOR CAPABLE OF DETECTING LONG WAVELENGTH RADIATION
    6.
    发明公开
    PHOTODETECTOR CAPABLE OF DETECTING LONG WAVELENGTH RADIATION 审中-公开

    公开(公告)号：EP2452364A4

    公开(公告)日：2017-12-06

    申请号：EP10797264

    申请日：2010-07-05

    申请人： UNIV SEOUL IND COOP FOUND

    发明人： AHN DOYEOL

    IPC分类号： H01L31/0232 ,  H01L31/09

    CPC分类号： H01L31/112 ,  H01L31/02327

    摘要： A photodetector capable of detecting long wavelength radiation, comprising a source disposed on a proximal end of an insulation layer; a drain disposed on a distal end of the insulation layer; at least one nano-assembly coupling the source and the drain between the proximal and distal ends; and at least two surface plasmon waveguides positioned between the source and the drain and juxtaposed to the at least one nano-assembly in a longitudinal direction of the at least one nano-assembly, wherein one of the at least two surface plasmon waveguides is positioned along a first side of the at least one nano-assembly, and another of the at least two surface plasmon waveguides is positioned along a second side of the at least one nano-assembly that is opposite the first side.

    A COMPOSITE NANOPARTICLE AND PHOTODETECTOR COMPRISING THE NANOPARTICLE
    7.
    发明公开
    A COMPOSITE NANOPARTICLE AND PHOTODETECTOR COMPRISING THE NANOPARTICLE 审中-公开
    包含纳米粒子的复合纳米粒子和光电探测器

    公开(公告)号：EP3190632A1

    公开(公告)日：2017-07-12

    申请号：EP16150795.9

    申请日：2016-01-11

    申请人： Nokia Technologies Oy

    发明人： HARRIS, Nadine ,  WHITE, Richard

    IPC分类号： H01L31/112 ,  H01L31/0232 ,  H01L31/0352

    CPC分类号： H01L31/112 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/035209 ,  H01L31/035218

    摘要： A composite nanoparticle (1) comprises an inner core (3) made of a transparent dielectric material, a first coating layer (5) made of a plasmonic material which overlays the inner core (3) and a second coating layer (7) made of a semiconductor material overlaying the first coating layer (5). Incident light is absorbed by generating surface plasmons at a boundary (4) between the inner core (3) and the first coating layer (5) and at a boundary (6) between the first coating layer (5) and the second coating layer (6) in order to increase the light absorption and thus the exciton generation by the second coating layer (7). The structure of composite particle (1) also allows for tuning of the resonance of the surface plasmons which tunes the frequency of light, or other electromagnetic radiation, that is detected. A photodetector for detecting the absorbed light comprises a channel (25) which is a layer of a two-dimensional material between a source electrode (23) and a drain electrode (24), and a layer (27) of a plurality of composite particles (1). The layer (27) acts as a photogate of the field effect transistor (21).

    摘要翻译： 复合纳米颗粒（1）包括由透明介电材料制成的内芯（3），由覆盖内芯（3）的等离子体激元材料制成的第一涂层（5）和由 覆盖第一涂层（5）的半导体材料。 入射光通过在内芯（3）和第一涂层（5）之间的边界（4）处以及在第一涂层（5）和第二涂层（5）之间的边界（6）处产生表面等离子体激元而被吸收 6）以增加光吸收并因此增加第二涂层（7）产生激子。 复合颗粒（1）的结构还允许调谐表面等离子体激元的谐振，该谐振调谐检测到的光的频率或其他电磁辐射。 用于检测吸收的光的光检测器包括作为源电极（23）和漏电极（24）之间的二维材料层的沟道（25）以及多个复合颗粒（27）的层（27） （1）。 层（27）充当场效应晶体管（21）的光栅。

    CMOS pixel with dual gate PMOS transistor
    10.
    发明公开
    CMOS pixel with dual gate PMOS transistor 审中-公开
    CMOS像素具有双栅PMOS晶体管

    公开(公告)号：EP1467409A2

    公开(公告)日：2004-10-13

    申请号：EP04368001.6

    申请日：2004-01-08

    申请人： Dialog Semiconductor

    发明人： Dosluoglu, Taner ,  McCaffrey, Joseph Nathaniel

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14609 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/112

    摘要： A CMOS pixel with a dual gate PMOS is formed by forming two P + regions in an N - well. The N - well is in a P - type substrate. The two P + regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N - well will not affect the collection of the photo-generated carriers as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the N - well potential so that they remain reverse biased with respect to the N - well. One of the P + regions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated carriers. The N - well forms a second gate for the dual gate PMOS transistor since the potential of the N - well 12 affects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible. The circuit can be expanded to form two PMOS transistors sharing a common drain in the N - well.