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1.发明授权LUMINESZENZDIODE UND VERFAHREN ZU DEREN HERSTELLUNG 有权VERFAHREN ZU DEREN HERSTELLUNG的LUMINESZENZDIODE
公开(公告)号：EP1352432B1
公开(公告)日：2011-06-15
申请号：EP02702216.9
申请日：2002-01-15
发明人： BAUR, Johannes , EISERT, Dominik , FEHRER, Michael , HAHN, Berthold , HÄRLE, Volker , JACOB, Ulrich , PLASS, Werner , STRAUSS, Uwe , VÖLKL, Johannes , ZEHNDER, Ulrich
CPC分类号： H01L33/644 , F21K9/23 , F21V29/70 , F21Y2115/10 , H01L25/0753 , H01L33/483 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a light-emitting diode (1) comprising a lens body (3) that is made of an inorganic solid substance. Semiconductor chips (2), which emit light beams (18), are fastened to the lens body (3). The light-emitting diode (1) is also provided with an enclosure (20) that can be screwed by means of a screw thread (21) into a traditional lamp socket.
摘要翻译： 发光二极管（1）具有由无机固体制成的透镜体（3）。 在透镜体（3）上固定有发射光束（18）的半导体芯片（2）。 此外，发光二极管（1）设置有可经由螺纹（21）拧入传统的灯座中的壳体（20）。
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公开(公告)号：EP1332521B1
公开(公告)日：2013-08-28
申请号：EP01993029.6
申请日：2001-11-06
发明人： BAUR, Johannes , EISERT, Dominik , FEHRER, Michael , HAHN, Berthold , HÄRLE, Volker , JACOB, Ulrich , OBERSCHMID, Raimund , PLASS, Werner , STRAUSS, Uwe , VÖLKL, Johannes , ZEHNDER, Ulrich
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/405
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公开(公告)号：EP1352432B9
公开(公告)日：2011-12-07
申请号：EP02702216.9
申请日：2002-01-15
发明人： BAUR, Johannes , EISERT, Dominik , FEHRER, Michael , HAHN, Berthold , HÄRLE, Volker , JACOB, Ulrich , PLASS, Werner , STRAUSS, Uwe , VÖLKL, Johannes , ZEHNDER, Ulrich
CPC分类号： H01L33/644 , F21K9/23 , F21V29/70 , F21Y2115/10 , H01L25/0753 , H01L33/483 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a light-emitting diode (1) comprising a lens body (3) that is made of an inorganic solid substance. Semiconductor chips (2), which emit light beams (18), are fastened to the lens body (3). The light-emitting diode (1) is also provided with an enclosure (20) that can be screwed by means of a screw thread (21) into a traditional lamp socket.
摘要翻译： 本发明涉及包括由无机固体物质制成的透镜体（3）的发光二极管（1）。 发射光束（18）的半导体芯片（2）固定在透镜体（3）上。 发光二极管（1）还具有外壳（20），该外壳可以通过螺纹（21）拧入传统的灯座中。
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公开(公告)号：EP1352432A1
公开(公告)日：2003-10-15
申请号：EP02702216.9
申请日：2002-01-15
发明人： BAUR, Johannes , EISERT, Dominik , FEHRER, Michael , HAHN, Berthold , HÄRLE, Volker , JACOB, Ulrich , PLASS, Werner , STRAUSS, Uwe , VÖLKL, Johannes , ZEHNDER, Ulrich
IPC分类号： H01L33/00 , H01L25/075
CPC分类号： H01L33/644 , F21K9/23 , F21V29/70 , F21Y2115/10 , H01L25/0753 , H01L33/483 , H01L33/507 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a light-emitting diode (1) comprising a lens body (3) that is made of an inorganic solid substance. Semiconductor chips (2), which emit light beams (18), are fastened to the lens body (3). The light-emitting diode (1) is also provided with an enclosure (20) that can be screwed by means of a screw thread (21) into a traditional lamp socket.
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公开(公告)号：EP1332521A1
公开(公告)日：2003-08-06
申请号：EP01993029.6
申请日：2001-11-06
发明人： BAUR, Johannes , EISERT, Dominik , FEHRER, Michael , HAHN, Berthold , HÄRLE, Volker , JACOB, Ulrich , OBERSCHMID, Raimund , PLASS, Werner , STRAUSS, Uwe , VÖLKL, Johannes , ZEHNDER, Ulrich
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/405
摘要： A light-emitting chip (3) comprises a lens-shaped output window (4), the base surface (5) of which is provided with a mirror surface (6). A sequence of layers (9) is arranged on an output surface (7) of the output window (4) with a photon-emitting p-n junction (10). The photons emitted by the p-n junction are reflected at the mirror surface (6) and can leave the output window (4) through the output surface (7).
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公开(公告)号：EP1307927A1
公开(公告)日：2003-05-07
申请号：EP01964845.0
申请日：2001-07-24
发明人： BAUR, Johannes , EISERT, Dominik , FEHRER, Michael , HAHN, Berthold , HÄRLE, Volker , JACOB, Ulrich , PLASS, Werner , STRAUSS, UWE , VÖLKL, Johannes , ZEHNDER, Ulrich
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/24 , H01L2224/48091 , H01L2924/00014
摘要： According to the invention, the longitudinal sides of semiconductor chips (1) for high-performance luminescent diodes are considerably longer than the transverse sides. This improves the coupling out of light considerably.
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公开(公告)号：EP1307927B1
公开(公告)日：2010-09-22
申请号：EP01964845.0
申请日：2001-07-24
发明人： BAUR, Johannes , EISERT, Dominik , FEHRER, Michael , HAHN, Berthold , HÄRLE, Volker , JACOB, Ulrich , PLASS, Werner , STRAUSS, UWE , VÖLKL, Johannes , ZEHNDER, Ulrich
IPC分类号： H01L33/20
CPC分类号： H01L33/20 , H01L33/24 , H01L2224/48091 , H01L2924/00014
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8.发明公开LUMINESZENZDIODENCHIP MIT EINER AUF GAN BASIERENDEN STRAHLUNGSEMITTIERENDEN EPITAXIESCHICHTENFOLGE UND VERFAHREN ZU DESSEN HERSTELLUNG 审中-公开与用于在GaN-BASED辐射发射外延层AND METHOD LED芯片ITS
公开(公告)号：EP1284026A1
公开(公告)日：2003-02-19
申请号：EP01953777.8
申请日：2001-05-28
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/73 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01067 , H01L2924/12041 , H01L2924/00014 , H01L2924/00012
摘要： The invention relates to a light-emitting-diode chip (1) comprising a sequence of GaN-based epitaxial layers (3) which emit radiation, said layers having an active zone (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided with a reflective contact metallization (6) on its principal surface (9) which faces away from the active zone (19), said metallization comprising a contact layer (15) that is transparent to radiation and a reflective layer (16). The invention also relates to methods for producing light emitting diodes of this type using a thin-film technique and to light-emitting-diode components comprising light-emitting-diode chips of this type.
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9.发明公开
公开(公告)号：EP1256135A1
公开(公告)日：2002-11-13
申请号：EP01913666.2
申请日：2001-02-15
发明人： EISERT, Dominik , HÄRLE, Volker , KÜHN, Frank , MUNDBROD, Manfred , STRAUSS, Uwe , ZEHNDER, Ulrich , BAUR, Johannes , JACOB, Ulrich , NIRSCHL, Ernst , LINDER, Norbert , SEDLMEIER, Reinhard
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L21/32139 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/42 , H01L33/46
摘要： A radiation-emitting semiconductor component has a multiple layer structure (4) containing a radiation-emitting active layer (5), and a radiation-permeable window (1) having main surfaces (2, 3) and a recess (8) for forming radiation coupling surfaces running diagonally to the first main surface (2). At least one side surface of the window and/or recess limiting the second main surface (3) is provided with a first contact surface (11). An independent claim is also included for the production of a radiation-emitting semiconductor component comprising preparing a window layer with main surfaces; applying a semiconductor layer structure on the first main surface; structuring the window layer to form a recess in the second main surface; forming a contact surface on the side of the second main surface of the window layer; and finishing the semiconductor component. Preferred Features: The window is made from sapphire, quartz glass, diamond, ITO, tin oxide, zinc oxide, indium oxide, silicon carbide or gallium phosphide. The multiple layer structure is based on gallium nitrides.
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