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1.发明公开Diffusion mask and fabrication method for forming PN-junction elements in a compound semiconductor substrate 失效扩散掩模和制作p-n结的方法中的化合物半导体衬底
公开(公告)号：EP0723285A3
公开(公告)日：1997-04-02
申请号：EP95309079.2
申请日：1995-12-13
发明人： Ogihara, Mitsuhiko, c/o Oki Electric Ind. Co.,Ltd. , Nakamura, Yukio, c/o Oki Electric Ind. Co.,Ltd. , Koizumi, Masumi, c/o Oki Electric Ind. Co.,Ltd. , Taninaka,Masumi, c/o Oki Electric Ind. Co.,Ltd.
IPC分类号： H01L21/225 , H01L33/00
CPC分类号： H01L33/0008 , H01L21/2258
摘要： A pn-junction element is formed in a compound semiconductor substrate by depositing an aluminum-nitride film on the surface of the substrate, patterning the aluminum-nitride film to form a diffusion mask, depositing a diffusion source film on the diffusion mask, diffusing an impurity from the diffusion source film into the substrate, and removing the diffusion source film with buffered hydrofluoric acid. Electrode lines can then be formed directly on the aluminum-nitride diffusion mask, which is not etched by buffered hydrofluoric acid.
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2.发明公开Diffusion mask and fabrication method for forming PN-junction elements in a compound semiconductor substrate 失效扩散体和Herstellungsverfahren von PN-Übergängen在einem Verbindungshalbleitersubstrat
公开(公告)号：EP0723285A2
公开(公告)日：1996-07-24
申请号：EP95309079.2
申请日：1995-12-13
发明人： Ogihara, Mitsuhiko, c/o Oki Electric Ind. Co.,Ltd. , Nakamura, Yukio, c/o Oki Electric Ind. Co.,Ltd. , Koizumi, Masumi, c/o Oki Electric Ind. Co.,Ltd. , Taninaka,Masumi, c/o Oki Electric Ind. Co.,Ltd.
IPC分类号： H01L21/225 , H01L33/00
CPC分类号： H01L33/0008 , H01L21/2258
摘要： A pn-junction element is formed in a compound semiconductor substrate by depositing an aluminum-nitride film on the surface of the substrate, patterning the aluminum-nitride film to form a diffusion mask, depositing a diffusion source film on the diffusion mask, diffusing an impurity from the diffusion source film into the substrate, and removing the diffusion source film with buffered hydrofluoric acid. Electrode lines can then be formed directly on the aluminum-nitride diffusion mask, which is not etched by buffered hydrofluoric acid.
摘要翻译： 在化合物半导体衬底中，通过在衬底的表面上沉积氮化铝膜来形成pn结元件，对氮化铝膜进行构图以形成扩散掩模，在扩散掩模上沉积扩散源膜，扩散 从扩散源膜到基板中的杂质，并用缓冲氢氟酸除去扩散源膜。 然后可以直接在不被缓冲氢氟酸腐蚀的氮化铝扩散掩模上形成电极线。
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