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54 条记录 (耗时 0.013 秒)

    A method of producing a substrate by transferring a donor wafer comprising foreign species, and an associated donor wafer
    2.
    发明公开
    A method of producing a substrate by transferring a donor wafer comprising foreign species, and an associated donor wafer 有权
    一种用于通过供体的转移准备基板杂质晶片，和一个相应的供体晶片工艺

    公开(公告)号：EP1408545A2

    公开(公告)日：2004-04-14

    申请号：EP03292465.6

    申请日：2003-10-07

    申请人： S.O.I. Tec Silicon on Insulator Technologies ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

    发明人： Letertre, Fabrice ,  Levaillant, Yves Mathieu ,  Jalaguier, Eric

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76254 ,  H01L21/2258

    摘要： The invention provides a method of producing a substrate comprising a thin crystalline layer transferred from a donor wafer onto a support, said thin layer including one or more foreign species intended to modify its properties, the method being characterized in that it comprises the following steps in sequence:

    implanting atomic species into a zone of the donor wafer (20) that is substantially free of foreign species (24), to form an embrittlement zone (22) below a bonding face, the embrittlement zone and the bonding face delimiting a thin layer (23) to be transferred;
    bonding the donor wafer (20), at the level of its bonding face, to a support (10);
    applying stresses in order to produce a cleavage in the region of the embrittlement zone (22) to obtain a substrate comprising the support (10) and the thin layer (23);
    and in that it further comprises a step of diffusing foreign species (24) into the thickness of the thin layer (23) prior to implantation or after fracture, suited to modify the properties of the thin layer, in particular its electrical or optical properties.
    Application to producing substrates with a thin InP layer rendered semi-insulating by iron diffusion.

    摘要翻译： 本发明提供产生一个基片，其包括从供体晶片转移到载体上的薄晶体层的方法，所述薄层包括用于修改其属性的一个或多个外源物种，其特征在于在该方法中这样做是包括在下面的步骤 序列：植入原子物种进入施体晶片（20）那样的区域基本上不含外来物质（24）以形成在低于粘合面脆化区（22），所述脆化区与接合面限定的薄层 （23）将要传输的 在其粘合面的水平接合所述施主晶片（20），在支撑体（10）; 为了产生在脆化区（22）的区域中的切割，以获得基片，其包括支撑件（10）和所述薄层（23）施加应力; 并且在没有进一步包括扩散外来物种（24）插入在植入前或骨折后的薄层（23），适合于修改所述薄层的性能，特别是它的电或光学性质的厚度的步骤。 应用到制造具有呈现由铁扩散半绝缘的薄InP层基板。

    Method for maskless diffusion
    6.
    发明公开
    Method for maskless diffusion 失效
    方法扩展的方法

    公开(公告)号：EP0352737A3

    公开(公告)日：1991-02-13

    申请号：EP89113696.2

    申请日：1989-07-25

    申请人： SIEMENS AKTIENGESELLSCHAFT

    发明人： Shieh, Chan-Long ,  Kohn, Erhard

    IPC分类号： H01L21/225 ,  H01S3/19

    CPC分类号： H01L21/2258

    摘要： A method for selectively diffusing silicon into a selected portion of a gallium arsenide substrate comprises exposing a non-selected surface portion to an argon ion plasma, thereafter applying silicon to the surface of the substrate and subjecting it to heat treatment so as to promote silicon diffusion.

    摘要翻译： 将硅选择性地扩散到砷化镓衬底的选定部分中的方法包括将未选择的表面部分暴露于氩离子等离子体，然后将硅施加到衬底的表面上并进行热处理，以促进硅扩散 。

    Selective intermixing of layered structures composed of thin solid films
    7.
    发明公开
    Selective intermixing of layered structures composed of thin solid films 失效
    Selektive Verbindung von mehrschichtigen Strukturen aus festenDünnschichten。

    公开(公告)号：EP0264222A2

    公开(公告)日：1988-04-20

    申请号：EP87308868.6

    申请日：1987-10-07

    申请人： AMOCO CORPORATION

    发明人： Ralston, John Duncan ,  Moretti, Anthony Luke ,  Jain, Ravinder Kumar

    IPC分类号： H01L21/268 ,  H01L21/263 ,  H01L29/14

    CPC分类号： H01L21/2636 ,  H01L21/182 ,  H01L21/2258

    摘要： A multilayer semiconductor structure, formed of two or more separate layers of different materials can be selectively intermixed so as to become compositionally modified, such that the distinction between the different original materials is lost, at least partially. This intermixing process employs irradiation with a pulsed or rapidly scanned laser or electron beam, generally at ambient conditions of temperature and pressure, at energy levels which avoid physical damage to the layered structure. The intermixing may be more complete when multiple pulses from the laser or electron beam are employed.

    摘要翻译： 可以选择性地混合由两种或更多种不同材料分离的层形成的多层半导体结构，以便被组合地修饰，使得至少部分地损失不同原始材料之间的区别。 这种混合过程通常在温度和压力的环境条件下以脉冲或快速扫描的激光或电子束照射，其能量水平避免了对层状结构的物理损伤。 当采用来自激光或电子束的多个脉冲时，混合可能更完整。

    GROUP III NITRIDE BASED SEMICONDUCTOR DEVICE
    8.
    发明公开
    GROUP III NITRIDE BASED SEMICONDUCTOR DEVICE 审中-公开
    III族氮化物基半导体器件

    公开(公告)号：EP3217433A1

    公开(公告)日：2017-09-13

    申请号：EP17159548.1

    申请日：2017-03-07

    申请人： IMEC vzw

    发明人： Stoffels, Steve ,  Saripalli, Yoganand

    IPC分类号： H01L29/778 ,  H01L29/417 ,  H01L29/10 ,  H01L29/207 ,  H01L29/423 ,  H01L29/20

    CPC分类号： H01L29/0634 ,  H01L21/2258 ,  H01L21/28575 ,  H01L21/30612 ,  H01L21/3245 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/861

    摘要： The invention is related to a III-Nitride semiconductor device comprising a base substrate (1), a buffer layer (2), a channel layer (3), a barrier layer (4) so that a 2-dimensional charge carrier gas (5) is formed or can be formed near the interface between the channel layer (3) and the barrier layer (4), and at least one set of a first and second electrode (6,7) in electrical contact with the 2-dimensional charge carrier gas (5), wherein the device further comprises a mobile charge layer (MCL) (11) within the buffer layer (2) or near the interface between the buffer layer (2) and the channel layer, when the device is in the on-state. The device further comprises (3) an electrically conductive path (12) between one of the electrodes (6,7) and the mobile charge layer (11). The invention is equally related to a method for producing a device according to the invention.

    摘要翻译： 本发明涉及包括基础衬底（1），缓冲层（2），沟道层（3），阻挡层（4）的III族氮化物半导体器件，从而使得二维电荷载体气体 ）形成或可形成在沟道层（3）与阻挡层（4）之间的界面附近，并且至少一组第一和第二电极（6,7）与二维电荷 （5），其中所述器件进一步包括在所述器件处于所述缓冲层（2）内时或在所述缓冲层（2）与所述沟道层之间的界面附近的移动电荷层（MCL） 导通状态。 该装置还包括（3）电极（6,7）中的一个与移动电荷层（11）之间的导电路径（12）。 本发明同样涉及用于制造根据本发明的装置的方法。

    Selective diffusion for III - V semiconductor devices
    9.
    发明公开
    Selective diffusion for III - V semiconductor devices 失效
    选择性扩散为III-V族半导体器件。

    公开(公告)号：EP0631300A3

    公开(公告)日：1997-10-08

    申请号：EP94304440.4

    申请日：1994-06-20

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LIMITED

    发明人： Tanaka, Nobuhisa, c/o Osaka Works of ,  Iwasaki, Takashi, c/o Osaka Works of ,  Yoneyama, Shun-Ichi, c/o Osaka Works of ,  Iguchi, Yasuhiro, c/o Osaka Works of

    IPC分类号： H01L21/225 ,  H01L31/18 ,  H01L31/105

    CPC分类号： H01L31/105 ,  H01L21/2258 ,  H01L31/184 ,  Y02E10/544

    摘要： Closed tube methods have been employed to diffuse impurities selectively in a groups III - V semiconductor wafer. The closed tube methods are convenient for preventing the element of group V from dissociating out of the wafer surface by pressurizing the vapor pressure of the element of group V. Open tube methods failed in diffusing impurities without defects due to the fluctuation of the vapor pressure of the element of group V. Both methods have relied upon the vapor phase diffusion using a gas containing impurities. This invention adopts an open tube method of diffusing impurities in solid phase. This invention forms a suppression mask film having windows selectively on a wafer, and grows impurity-containing films on the windows by vapor phase reaction in an open reaction tube. The impurities diffuse from the impurity-containing films to the wafer substrate in solid phase. The impurity diffusion occurs either at the same time of the growth of the films or after the growth of the films at a different temperature. The compound semiconductor is covered with solid films during the impurity diffusion. This invention is immune from the difficulty of escape of elements of group V from the surface of a wafer.