公开(公告)号：EP2796594A1

公开(公告)日：2014-10-29

申请号：EP13736325.5

申请日：2013-01-10

申请人： Osaka University

发明人： MORI Yusuke ,  IMADE Mamoru ,  YOSHIMURA Masashi ,  HIRAO Mihoko ,  IMANISHI Masayuki

IPC分类号： C30B19/02 ,  C30B29/38 ,  H01L21/208

CPC分类号： C30B19/02 ,  C30B19/12 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L29/2003 ,  H01L33/007

摘要： The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality. The method is a method for producing a Group III nitride crystal (13), including: a seed crystal selection step of selecting plural parts of a Group III nitride crystal layer (11) as seed crystals for generation and growth of Group III nitride crystals (13); a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt; a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow the Group III nitride crystals (13), wherein the seed crystals are hexagonal crystals, in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not substantially coincide with each other, and in the crystal growth step, the plural Group III nitride crystals (13) grown from the plural seed crystals by the growth of the Group III nitride crystals (13) are bound.

摘要翻译： 本发明提供一种用于制造III族氮化物晶体的方法，其能够制造具有较少缺陷和高质量的大尺寸的III族氮化物晶体。 该方法是用于制造III族氮化物晶体（13）的方法，包括：晶种选择步骤，用于选择多个部分的III族氮化物晶体层（11）作为III族氮化物晶体的生成和生长的晶种（ 13）; 接触步骤，使晶种的表面与碱金属熔体接触; 晶体生长步骤，使III族元素和氮在碱金属熔体中的含氮气氛下彼此反应以生成并生长III族氮化物晶体（13），其中籽晶是六方晶体， 晶种选择步骤中，晶种排列为使得从彼此相邻的晶种生长的各个晶体的m面基本上不彼此一致，并且在晶体生长步骤中，多个第III组 通过III族氮化物晶体（13）的生长从多个晶种生长的氮化物晶体（13）被束缚。