FABRICATION PROCESS FOR A/M/X MATERIALS
    6.
    发明公开

    公开(公告)号:EP3974498A1

    公开(公告)日:2022-03-30

    申请号:EP21195937.4

    申请日:2019-07-12

    IPC分类号: C09K11/66

    摘要: The invention relates to a process for producing a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A] a [M] b [X] c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18. The process is capable of producing crystalline A/M/X materials while precisely controlling their stoichiometry, leading to products with finely tunable optical properties such as peak emission wavelength. The invention also relates to process for producing a thin film comprising the crystalline A/M/X material of the invention, and to a thin film obtainable by the process of the invention. An optoelectronic device comprising the thin film is also provided.