公开(公告)号：EP0559326B1

公开(公告)日：1997-05-07

申请号：EP93300724.7

申请日：1993-02-01

申请人： PIONEER ELECTRONIC CORPORATION ,  Amano, Hiroshi ,  Akasaki, Isamu

发明人： Watanabe, Atsushi, c/o Pioneer Electronic Corp. ,  Amano, Hiroshi, Nijigaoka-higashidanchi ,  Hiramatsu, Kazumasa ,  Akasaki, Isamu

IPC分类号： C30B25/14 ,  C23C16/44

CPC分类号： C30B25/14 ,  C23C16/455

公开(公告)号：EP0559326A1

公开(公告)日：1993-09-08

申请号：EP93300724.7

申请日：1993-02-01

申请人： PIONEER ELECTRONIC CORPORATION ,  Amano, Hiroshi ,  Akasaki, Isamu

发明人： Watanabe, Atsushi, c/o Pioneer Electronic Corp. ,  Amano, Hiroshi, Nijigaoka-higashidanchi ,  Hiramatsu, Kazumasa ,  Akasaki, Isamu

IPC分类号： C30B25/14 ,  C23C16/44

CPC分类号： C30B25/14 ,  C23C16/455

摘要： A compound semiconductor vapor phase epitaxial device comprises a cylindrical reactor vessel (2), a plurality of flow channels (17, 27) disposed in the reactor vessel, a crystal substrate (7) disposed in one of the flow channels, a plurality of gas supply pipes for respectively supplying gas containing element of compound to be grown on the crystal substrate and at least one slit (10) or linearly arranged fine holes (P) communicating adjacent two flow channels so as to extend in a direction normal to a direction of the gas flow to form a laminate layer flow consisting of two or more than two gases at an upstream portion of location of the crystal substrate.

摘要翻译： 化合物半导体气相外延装置包括圆柱形反应器容器（2），设置在反应器容器中的多个流动通道（17,27），设置在一个流动通道中的晶体基板（7），多个气体 用于分别供给在晶体基板上生长的化合物的气体的供给管和至少一个狭缝（10）或与两个流动通道相邻的线状排列的细孔（P），以沿着垂直于 气流在晶体基板的位置的上游部分处形成由两个或多于两个气体组成的层压层流。