LEVEL SHIFTER
    1.
    发明公开

    公开(公告)号:EP3272013A1

    公开(公告)日:2018-01-24

    申请号:EP16704531.9

    申请日:2016-01-29

    IPC分类号: H03K17/689 H03K19/0185

    摘要: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.

    LEVEL SHIFTER
    3.
    发明授权

    公开(公告)号:EP3272013B1

    公开(公告)日:2019-11-13

    申请号:EP16704531.9

    申请日:2016-01-29

    IPC分类号: H03K17/689 H03K19/0185

    摘要: Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.