摘要:
A surface acoustic wave band reject filter (34) implemented as a flip chip assembly is presented. The surface acoustic wave band reject filter (34) comprises a substrate (24) including electrode bars (20) and bonding pads (36) formed on the substrate (24), and at least one die (26) having a side facing the substrate (24), a plurality of surface acoustic wave resonators (10) being formed on the at least one die (26), the at least one die (26) being mounted on the substrate (24), solder balls (22) in contact with the side of the at least one die (26) facing the substrate (24), the solder balls (22) being positioned to be in electrical contact with the electrode bars (20) and bonding pads (36) on the substrate (24), the plurality of surface acoustic wave resonators (10) being connected by the electrode bars (20) and bonding pads (36) via the solder balls (22) and collectively exhibiting a band reject filter response. According to a first arrangement, a first three of the plurality of the surface acoustic wave resonators (10) are arranged so that two of the plurality of surface acoustic wave resonators (10) are electrically in series, and a third surface acoustic wave resonator (10) is electrically in parallel to and between the two of the plurality of surface acoustic wave resonators (10). According to a second arrangement, a first three of the plurality of surface acoustic wave resonators (10) are arranged such that a first two surface acoustic wave resonators (10) are electrically in parallel, and a third surface acoustic wave resonator (10) is electrically intervening between the first two surface acoustic wave resonators (10).
摘要:
An inexpensive compact band rejection filter which realizes a high sharpness of a filter characteristic at ends of passbands and which has a large attenuation is provided. In the band rejection filter (1), at least one of elastic wave resonators which contributes to formation of a transition band has a propagation angle larger than those of the other elastic wave resonators. Accordingly, the at least one of the elastic wave resonators which contributes to the formation of the transition band has an electromechanical coupling coefficient smaller than electromechanical coupling coefficients of the other elastic wave resonator.
摘要:
A SAW filter device includes a SAW filter chip in which one-port surface acoustic wave resonators each including an IDT made of Al or an Al alloy, are provided on a θ-rotated Y-cut X-propagation LiNbO 3 substrate. The cutting angle θ of the θ-rotated Y-cut X-propagation LiNbO 3 substrate is in the range between 50° and 55°. The normalized film thickness of the IDT 100h/λ (%) (h denotes the thickness of the IDT and λ denotes the wavelength of a surface acoustic wave) is in the range between 2% and 4%. The duty ratio of the IDT is equal to or less than 0.4.
摘要:
Acoustic resonators such as surface acoustic wave (SAW) devices and thin film bulk acoustic resonators (FBAR) can be configured to produce a band reject filter. Such a filter overcomes the insertion loss and power handling limitations of conventional band pass configurations and as such can be used in power amplifier and duplexer applications.
摘要:
A tunable filter using acoustic resonators is disclosed. A tunable filter includes a plurality of tunable resonator units (20). Each tunable resonator unit (20) has acoustic wave resonators (12). Each acoustic wave resonator is associated with a different tunable frequency. Each tunable resonator unit also has a first switch (22) configured to select one of the plurality of acoustic wave resonators of the tunable resonator unit at a time. The first switches of the plurality of tunable resonator units are coupled to cooperatively select one acoustic wave resonator in each one of the plurality of tunable resonator units, where a selected acoustic wave resonator in a tunable resonator unit of the plurality of tunable acoustic resonator units is associated with a same tunable frequency response as the other selected acoustic resonators of the others of the plurality of tunable acoustic resonator units. The selection results in an overall tunable frequency response.
摘要:
A tunable acoustic wave filter is switchable between band-pass and band reject characteristic. The filter comprises in a T-ype arrangement a first and second series resonator (82A...82N, 83A...83N), each with a switch in parallel (182A...182N, 183A...183N), and a third resonator (84A...84N) to ground. The first and second series resonators have differing resonance and anti-resonance frequencies. Depending on the position of the two switches the filter can operate with band-pass or band reject characteristic. Each resonator may have variable capacitors in parallel and in series to allow for tunability of the filter characteristic.
摘要:
A method and system for providing a surface acoustic wave band reject filter are disclosed. According to one aspect, a surface acoustic wave band reject filter (34) includes a substrate (24) having electrode bars and bonding pads (36) formed on the substrate (24). The filter (34) further includes at least one die (26) having a side facing the substrate (24). A plurality of surface acoustic wave resonators (10) are formed on the at least one die (26) formed on the substrate (24). Solder balls (22) formed on a side of the at least one die (26) facing the substrate (24) are positioned to engage bonding pads on the substrate. The plurality of surface acoustic wave resonators (10) collectively exhibit a band reject filter response.
摘要:
A tunable acoustic wave filter is switchable between band-pass and band reject characteristic. The filter comprises in a T-ype arrangement a first and second series resonator (82A...82N, 83A...83N), each with a switch in parallel (182A...182N, 183A...183N), and a third resonator (84A...84N) to ground. The first and second series resonators have differing resonance and anti-resonance frequencies. Depending on the position of the two switches the filter can operate with band-pass or band reject characteristic. Each resonator may have variable capacitors in parallel and in series to allow for tunability of the filter characteristic.