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    "> Method of manufacturing a semiconductor device of the
    1.
    发明公开
    Method of manufacturing a semiconductor device of the "semiconductor on insulator" type 失效
    Verfahren zur Herstellung einer Halbleiteranordnung vom Typ“Halbleiter auf Isolator”。

    公开(公告)号：EP0274801A2

    公开(公告)日：1988-07-20

    申请号：EP87202644.8

    申请日：1987-12-29

    申请人： Philips Electronics N.V.

    发明人： Alexander, Elizabeth Maria Leontina ,  Haisma, Jan ,  Michielsen, Theodorus Martinus ,  van der Velden, Johannes Wilhelmus Adrianus ,  Verhoeven, Johannes Franciscus Cornelis Maria

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76297 ,  Y10S148/135 ,  Y10S148/164

    摘要： In a method of manufacturing a semiconductor device of the "semiconductor on insulator" type comprising at least one carrier body and a monocrystalline semi­conductor body, in a major surface (2) of a monocrystalline semiconductor body (1) grooves (3) are provided having a predetermined depth. The surface provided with grooves is coated with a layer (4) of material resistant to polishing; this layer is coated with a layer (5) of a chemomechanically polishable material having a layer thickness exceeding the groove depth, the latter layer (5) being polished to flatness and smoothness. The polished surface of the semiconductor body (1) is con­nected to a smooth flat major surface of a carrier body (6). Subsequently, the semiconductor body (1) is made thin, at least the last part of this operation consisting of a polishing step, which terminates on the layer (4) of material resistant to polishing so that mutually insulated "semiconductor on insulator" regions are obtained, the thickness of the semiconductor regions being equal to the depth of the grooves.

    摘要翻译： 在制造包括至少一个载体和单晶半导体本体的“半导体绝缘体”型半导体器件的方法中，在单晶半导体本体（1）的主表面（2）中设置有凹槽（3），其具有 预定深度。 设置有凹槽的表面涂覆有耐抛光的材料层（4）; 该层涂覆有具有超过槽深度的层厚度的化学机械抛光材料的层（5），后一层（5）被抛光成平坦度和平滑度。 半导体本体（1）的抛光表面连接到载体（6）的平滑的主表面。 随后，使半导体本体（1）变薄，该操作的至少最后一部分由抛光步骤组成，抛光步骤终止在耐抛光的材料层（4）上，以使相互绝缘的“绝缘体上半导体”区域 半导体区域的厚度等于凹槽的深度。