公开(公告)号：EP2491579B1

公开(公告)日：2019-03-13

申请号：EP10773203.4

申请日：2010-10-20

申请人： President and Fellows of Harvard College

发明人： GORDON, Roy, Gerald ,  BHANDARI, Harish B. ,  AU, Yeung ,  LIN, Youbo

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40

公开(公告)号：EP2491579A1

公开(公告)日：2012-08-29

申请号：EP10773203.4

申请日：2010-10-20

申请人： President and Fellows of Harvard College

发明人： GORDON, Roy, Gerald ,  BHANDARI, Harish ,  AU, Yeung ,  LIN, Youbo

IPC分类号： H01L21/285 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  C23C16/18 ,  C23C16/34 ,  C23C16/401 ,  H01L21/28506 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76853 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces. Catalytic deposition of copper using a Mn, Cr, or V containing precursor and an iodine or bromine containing precursor is also provided.

摘要翻译： 提供了一种集成电路中用于铜线的集成电路的互连结构及其制造方法。 含有Mn，Cr或V的层形成阻止铜从电线中扩散的屏障，从而保护绝缘体免于过早击穿，并保护晶体管免受铜的退化。 含Mn，Cr或V的层还促进了铜和绝缘体之间的强粘附，从而在制造和使用期间保持了器件的机械完整性，并且在使用器件期间防止铜的电迁移失效，并保护 铜从其周围的氧气或水中腐蚀。 在形成这样的集成电路中，本发明的某些实施例提供了在铜表面上选择性地沉积Mn，Cr，V或Co的方法，同时减少或甚至防止在绝缘体表面上沉积Mn，Cr，V或Co。 还提供了使用含有Mn，Cr或V的前体和含碘或溴的前体的铜的催化沉积。