公开(公告)号：EP3199663A1

公开(公告)日：2017-08-02

申请号：EP17152906.8

申请日：2017-01-24

申请人： Semiconductor Manufacturing International Corporation (Shanghai) ,  Semiconductor Manufacturing International Corporation (Beijing)

发明人： YUAN, Guangjie ,  ZHOU, Junqing ,  ZHANG, Haiyang

IPC分类号： C23C16/02 ,  C23C16/18 ,  C23C16/34 ,  C23C16/452 ,  C23C16/455

CPC分类号： H01L21/76814 ,  B08B7/0035 ,  C23C16/0227 ,  C23C16/18 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45544 ,  H01L21/02063 ,  H01L21/76846 ,  H01L21/76876 ,  H01L21/76879

摘要： An apparatus includes a housing, a chamber disposed in the housing and configured to receive a substrate, a shower head disposed outside the housing and configured to supply a process gas to the chamber, and a hot wire at a first temperature disposed between the shower head and the substrate. The hot wire at the first temperature ionizes the process gas, and the ionized gas is supplied to the substrate for performing a hot-wire assisted plasma-assisted precleaning process and a hot-wire assisted atomic layer deposition process. The apparatus also includes a hot plate in the chamber and configured to bring the substrate to a second temperature.

摘要翻译： 一种设备包括壳体，设置在壳体中并被配置为接收基板的腔室，设置在壳体外部并配置成向腔室供应处理气体的喷头以及设置在喷头之间的第一温度的热丝 和基材。 处于第一温度的热丝使处理气体电离，并且将电离的气体供给至基板，用于执行热丝辅助等离子体辅助预清洁处理和热丝辅助原子层沉积处理。 该设备还包括在该腔室中的热板并且被配置为将衬底带到第二温度。

公开(公告)号：EP2491579A1

公开(公告)日：2012-08-29

申请号：EP10773203.4

申请日：2010-10-20

申请人： President and Fellows of Harvard College

发明人： GORDON, Roy, Gerald ,  BHANDARI, Harish ,  AU, Yeung ,  LIN, Youbo

IPC分类号： H01L21/285 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  C23C16/18 ,  C23C16/34 ,  C23C16/401 ,  H01L21/28506 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76853 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces. Catalytic deposition of copper using a Mn, Cr, or V containing precursor and an iodine or bromine containing precursor is also provided.

摘要翻译： 提供了一种集成电路中用于铜线的集成电路的互连结构及其制造方法。 含有Mn，Cr或V的层形成阻止铜从电线中扩散的屏障，从而保护绝缘体免于过早击穿，并保护晶体管免受铜的退化。 含Mn，Cr或V的层还促进了铜和绝缘体之间的强粘附，从而在制造和使用期间保持了器件的机械完整性，并且在使用器件期间防止铜的电迁移失效，并保护 铜从其周围的氧气或水中腐蚀。 在形成这样的集成电路中，本发明的某些实施例提供了在铜表面上选择性地沉积Mn，Cr，V或Co的方法，同时减少或甚至防止在绝缘体表面上沉积Mn，Cr，V或Co。 还提供了使用含有Mn，Cr或V的前体和含碘或溴的前体的铜的催化沉积。

公开(公告)号：EP2412019A1

公开(公告)日：2012-02-01

申请号：EP10709853.5

申请日：2010-03-24

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique

发明人： HAUMESSER, Paul-Henri ,  BASSET, Jean-Marie ,  CAMPBELL, Paul ,  DELEONIBUS, Simon ,  GUTEL, Thibaut ,  MARCHAND, Gilles ,  SANTINI, Catherine

IPC分类号： H01L21/768 ,  H01L21/288

CPC分类号： H01L21/76895 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/288 ,  H01L21/76876 ,  H01L21/76879 ,  H01L2221/1094

摘要： The invention relates to a method for producing electrical interconnections made of carbon nanotubes (126), comprising the steps of: a) depositing an ionic liquid containing nanoparticles of an electrically conductive material in suspension, so as to cover one surface of an element (110) serving as a substrate for the carbon nanotubes, b) forming a deposition of said nanoparticles (118, 122, 124) against said surface of the element, c) removing the remaining ionic liquid, and d) growing the carbon nanotubes from said deposited nanoparticles.

公开(公告)号：EP1317772B1

公开(公告)日：2010-06-30

申请号：EP01968154.3

申请日：2001-08-24

申请人： Infineon Technologies North America Corp. ,  International Business Machines Corporation

发明人： IGGULDEN, Roy ,  WEBER, Stefan

IPC分类号： H01L21/768 ,  H01L23/522

CPC分类号： H01L21/76843 ,  H01L21/76876 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2138457A1

公开(公告)日：2009-12-30

申请号：EP09163710.8

申请日：2009-06-25

申请人： Commissariat à l'Energie Atomique

发明人： Dijon, Jean ,  Fournier, Adeline

IPC分类号： C01B31/02 ,  H01L21/768 ,  B01J23/745 ,  B01J23/75 ,  B01J37/12

CPC分类号： B01J37/0244 ,  B01J23/745 ,  B01J37/12 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： La présente invention concerne un procédé d'obtention d'un tapis de nanotubes de carbone (NTC) (580) sur un substrat conducteur ou semi-conducteur (510). Selon ce procédé, un complexe catalytique (530,570) comprenant au moins une couche métallique (570), est d'abord déposé sur ledit substrat. Ladite couche métallique subit ensuite un traitement oxydant. Enfin, on fait croître des nanotubes de carbone à partir de la couche métallique ainsi oxydée.
La présente invention concerne également une méthode de réalisation d'un via utilisant ledit procédé d'obtention de tapis de NTC.

摘要翻译： 该过程包括沉积催化络合物，其包含在衬底上的金属层，使用等离子或等离子体的连续在环境温度下在金属层上进行氧化处理，以及从氧化的金属层的一部分生长碳纳米管。 所述金属层沉积在非晶硅层，在所有这是在衬底上沉积。 该处理包括使用具有第一能量和压力，以及使用具有第二能量的第二等离子体氧化的第二步骤的第一等离子体氧化的第一步骤。 该过程包括沉积催化络合物，其包含在衬底上的金属层，使用等离子或等离子体的连续在环境温度下在金属层上进行氧化处理，以及从氧化的金属层的一部分生长碳纳米管。 所述金属层沉积在非晶硅层，在所有这是在衬底上沉积。 该处理包括使用具有第一能量和压力，以及使用具有第二能量的第二等离子体氧化的第二步骤的第一等离子体氧化的第一步骤中，所有这一切都小于第一能量和第二压力下也比第一压力大 ， 一个独立的claimsoft包括用于产生经由互连第一和第二导电层的方法。

公开(公告)号：EP1953809A3

公开(公告)日：2009-09-02

申请号：EP08150392.2

申请日：2004-04-30

申请人： Air Products and Chemicals, Inc.

发明人： Garg, Diwakar ,  Cheng, Hansong ,  Norman, John Anthony Thomas ,  Ordejon, Pablo

IPC分类号： H01L21/285 ,  C23C14/58

CPC分类号： H01L21/76843 ,  C23C14/58 ,  C23C14/5846 ,  H01L21/28556 ,  H01L21/3205 ,  H01L21/32051 ,  H01L21/76856 ,  H01L21/76876

摘要： A process is described for forming a metal film on a surface of a diffusion barrier layer, the process consisting of:
providing the surface of the diffusion barrier layer comprising a material selected from the group consisting of a metal carbide, a metal nitride, a metal carbonitride, a metal silicon carbide, a metal silicon nitride, a metal silicon carbonitride, and mixtures therefrom, wherein the surface comprises a stoichiometric amount or greater of nitrogen and/or carbon atoms relative to metal atoms contained therein, and wherein the surface has an orientation other than a substantially (111) preferred orientation; and
forming the metal film via a chemical vapor deposition process on the surface using a least one organometallic precursor comprising copper.

公开(公告)号：EP2011572A3

公开(公告)日：2009-05-20

申请号：EP07075889.1

申请日：2007-10-16

申请人： Interuniversitair Microelektronica Centrum (IMEC)

发明人： Radisic, Aleksander ,  Vereecken, Philippe M.

IPC分类号： B01J35/00 ,  C01B31/02 ,  H01L21/768 ,  H01L51/00

CPC分类号： B01J35/0013 ,  B01J23/75 ,  B01J37/06 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/18 ,  H01L21/76876 ,  H01L21/76879 ,  H01L51/0002 ,  H01L51/0048 ,  H01L2221/1094

摘要： The present invention provides a method for forming at least one catalyst nanoparticle (8) on at least one sidewall (10) of a three-dimensional structure on a main surface of a substrate (1a, 1 b), the main surface lying in a plane and the sidewall (10) of the three-dimensional structure lying in a plane substantially perpendicular to the plane of the main surface of the substrate (1a, 1b). The method comprises obtaining a three-dimensional structure on the main surface, the three-dimensional structure comprising catalyst nanoparticles (7) embedded in a non-catalytic matrix (5) and selectively removing at least part of the non-catalytic matrix (5) at the sidewalls (10) of the three-dimensional structure to thereby expose at least one catalyst nanoparticle (8). The present invention also provides a method for forming at least one elongated nanostructure (9), such as e.g. a nanowire or carbon nanotube, using the catalyst nanoparticles (8) formed by the method according to embodiments of the invention as a catalyst. The methods according to embodiments of the invention may be used in, for example, semiconductor processing. The methods according to embodiments of the present invention are scalable and fully compatible with existing semiconductor processing technology.

摘要翻译： 本发明提供了一种用于在衬底（1a，1b）的主表面上的三维结构的至少一个侧壁（10）上形成至少一个催化剂纳米颗粒（8）的方法，所述主表面位于 该平面和三维结构的侧壁（10）位于基本垂直于基底（1a，1b）的主表面的平面内。 该方法包括在主表面上获得三维结构，该三维结构包括嵌入非催化基质（5）中的催化剂纳米颗粒（7）并且选择性地去除至少部分非催化基质（5） 在三维结构的侧壁（10）处从而暴露至少一个催化剂纳米颗粒（8）。 本发明还提供了用于形成至少一个细长纳米结构（9）的方法，例如， 纳米线或碳纳米管，使用通过根据本发明的方法形成的催化剂纳米粒子（8）作为催化剂。 根据本发明的实施例的方法可以用于例如半导体处理。 根据本发明实施例的方法是可扩展的并且与现有的半导体处理技术完全兼容。

公开(公告)号：EP1890810A2

公开(公告)日：2008-02-27

申请号：EP06754394.2

申请日：2006-06-16

申请人： Inter-Universitair Microelektronica Centrum

发明人： NANOCYL S.A. ,  CRUZ ESCONJAUREGUI, Santiago ,  WHELAN, Caroline ,  MAEX, Karen

IPC分类号： B01J35/00 ,  B01J21/06 ,  B01J23/74 ,  C01B31/02

CPC分类号： H01L21/28518 ,  B01J23/74 ,  B01J23/745 ,  B01J23/75 ,  B01J23/755 ,  B01J35/0013 ,  B01J35/006 ,  B01J37/0217 ,  B01J37/0238 ,  B01J37/0244 ,  B01J37/08 ,  B01J37/347 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B33/06 ,  H01J9/025 ,  H01J2201/30469 ,  H01L21/76876 ,  H01L21/76879 ,  H01L51/0048 ,  H01L2221/1094

摘要： The present invention relates to a method for forming metal-silicide catalyst nanoparticles with controllable diameter. The method according to embodiments of the invention leads to the formation of ‘active’ metal- suicide catalyst nanoparticles, with which is meant that they are suitable to be used as a catalyst in carbon nanotube growth. The nano-particles are formed on the surface of a substrate or in case the substrate is a porous substrate within the surface of the inner pores of a substrate. The metal-silicide nanoparticles can be Co-silicide, Ni-silicide or Fe-silicide particles. The present invention relates also to a method to form carbon nanotubes (CNT) on metal-silicide nanoparticles, the metal-silicide containing particles hereby acting as catalyst during the growth process, e.g. during the chemical vapour deposition (CVD) process. Starting from very defined metal-containing nanoparticles as catalysts, the diameter of grown CNT can be well controlled and a homogeneous set of CNT will be obtained.

公开(公告)号：EP1190607B1

公开(公告)日：2006-09-27

申请号：EP00928360.7

申请日：2000-04-18

申请人： Infineon Technologies AG

发明人： HOINKIS, Mark, D.

IPC分类号： H05K3/10 ,  H01L21/768

CPC分类号： H01L21/76843 ,  C23C28/322 ,  C23C28/34 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2221/1078 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An improved fill of high aspect ratio trenches by copper is obtained by first sputtering a thin nucleating film of copper deposited by physical vapor deposition, then depositing a thin seed layer of copper by chemical vapor deposition, and then completing the fill by electroplating. Stress migration of the fill is improved if the copper deposition is preceded by the deposition by CVD of a layer of titanium nitride either alone or preceded and/or followed by the deposition of tantalum by an ionized PVD source.

公开(公告)号：EP1475453A8

公开(公告)日：2005-02-23

申请号：EP04017492.2

申请日：2002-10-28

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： Sakamoto, Hitoshi, c/o Mitsubishi Heavy Ind., Ltd. ,  Yahata, Naoki c/o Mitsubishi Heavy Ind., Ltd. ,  Matsuda, Ryuichi, c/o Mitsubishi Heavy Ind., Ltd. ,  Ooba, Yoshiyuki, c/o Mitsubishi Heavy Ind., Ltd. ,  Nishimori, Toshihiko, Mitsubishi Heavy Ind., Ltd.

IPC分类号： C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  C23C14/16 ,  C23C28/02 ,  H01L21/768

CPC分类号： H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

摘要： A metal film production apparatus, comprising: a chamber accommodating a substrate having a barrier metal film of a metal nitride formed thereon; diluent gas supply means for supplying a diluent gas to an interior of the chamber above a surface of the substrate; surface treatment plasma generation means which converts an atmosphere within the chamber into a plasma to generate a diluent gas plasma so that the barrier metal film on the surface of the substrate is etched with the diluent gas plasma to flatten the barrier metal film; a metallic etched member provided in the chamber; source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member; plasma generation means which converts the source gas containing the halogen into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas; and control means which makes a temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the flattened barrier metal film.